Method of fabricating semiconductor device allowing smooth bump surface

1. A method of fabricating a semiconductor device having a plurality of bumps formed on a semiconductor substrate, the method comprising:

removing, after forming solder for forming the plurality of bumps on the semiconductor substrate, an oxide film formed on a surface of the solder while heating the semiconductor substrate with first radiant heat, the semiconductor substrate being supported during the removing step by plural support arms that extend a first distance through a heater stage that supplies the first radiant heat; and

heating the semiconductor substrate with an amount of second radiant heat that is greater than the amount of the first radiant heat to reflow the solder from which the oxide film is removed, the semiconductor substrate being supported during the heating step by tapered points of plural holding pins that are spaced from the plural support arms and that extend a second distance through the heater stage that also supplies the second radiant heat, the second distance being less than the first distance,

wherein the tapered points of the plural holding pins each have a point contact with the semiconductor substrate when supporting the semiconductor substrate so that a ratio of conductive heat transfer to radiant heat transfer is negligible.

2. The method of fabricating a semiconductor device according to claim 1 , wherein the step of removing the oxide film is the step of removing the oxide film formed on the surface of the bump by applying plasma containing hydrogen.

3. The method of fabricating a semiconductor device according to claim 1 , wherein the step of removing the oxide film and the step of reflow are performed in the same chamber of the same apparatus.

4. A method of fabricating a semiconductor device comprising:

(a) sequentially forming a barrier film and a seed film made of Cu on a semiconductor substrate by sputtering;

(b) forming a film resist on the semiconductor substrate and forming a hole in the film resist at a predetermined position to expose a surface of the seed film therein after said step (a);

(c) forming a Cu electrode in the hole by plating wherein the surface of the seed film exposed in a bottom part of the hole is a seed;

(d) forming an AgSn solder layer in the hole on the Cu electrode and simultaneously forming an alloy layer made of a CuSn alloy between the solder layer and the Cu electrode;

(e) removing the film resist as well as forming an oxide film on the solder on a top surface and a side surface of the solder layer after said step (d);

(f) placing the semiconductor substrate in a reflow apparatus after said step (e);

(g) applying hydrogen plasma to the semiconductor substrate in the reflow apparatus to reduce and remove the oxide film on the solder; and

(h) reflowing the solder from which the oxide film is removed to form a dome-shaped bump on a top surface of the alloy layer,

wherein said step (g) includes a process of heating the semiconductor substrate with first radiant heat, the semiconductor substrate being supported during the step (g) by plural support arms that extend a first distance through a heater stage that supplies the first radiant heat,

wherein said step (h) includes a process of heating the semiconductor substrate with second radiant heat that is greater than the first radiant heat to reflow the solder, the semiconductor substrate being supported during the step (h) by tapered points of plural holding pins that are spaced from the plural support arms and that extend a second distance through the heater stage that also supplies the second radiant heat, the second distance being less than the first distance, and

wherein the tapered points of the plural holding pins each have a point contact with the semiconductor substrate when supporting the semiconductor substrate so that a ratio of conductive heat transfer to radiant heat transfer is negligible.