Content addressable memory row having virtual ground and charge sharing
View Patent ↗A content addressable memory (CAM) row is disclosed. The CAM row includes one or more compare circuits coupled between a match line and a virtual-ground line. The compare circuits are configured to compare a search key with CAM cell data words. The CAM row also includes a pre-charge circuit controlled by a pre-charge signal, and includes a tank capacitor. The pre-charge circuit is configured to pre-charge the match line to a supply voltage in response to assertion of the pre-charge signal. A pull-down transistor dynamically discharges the virtual-ground line to ground potential.
1. A content addressable memory (CAM) device including an array having a plurality of rows, wherein a respective row from among the plurality of rows comprises:
a plurality of CAM cells, each CAM cell from among the plurality of CAM cells being connected between a match line and a second line;
a match line discharge transistor connected between the second line and a ground potential and having a gate responsive to a signal that selectively discharges the second line to the ground potential; and
a match detect circuit having an input connected to the match line, a first power terminal connected to a supply voltage, and a second power terminal connected to the second line.
2. The CAM device of claim 1 , wherein the match detect circuit comprises:
a NAND gate connected between the supply voltage and the second line.
3. The CAM device of claim 1 , wherein the gate of the match line discharge transistor is connected to the match line.
4. The CAM device of claim 1 , wherein the gate of the match line discharge transistor is responsive to a pre-charge signal.
5. The CAM device of claim 1 , wherein the respective row further comprises:
a match line charging circuit comprising:
a pre-charge transistor connected between the supply voltage and the match line and having a gate to receive a pre-charge signal;
a PMOS pull-up transistor connected between the supply voltage and the match line and having a gate; and
a NAND gate having a first input connected to the match line, a second input to receive a clock signal, and an output coupled to the gate of the PMOS pull-up transistor.
6. The CAM device of claim 1 , wherein the respective row further comprises:
a match line charging circuit comprising:
a first PMOS transistor connected between the supply voltage and a charging node;
a second PMOS transistor connected between the charging node and the match line; and
a tank capacitor connected between the charging node and the ground potential.
7. The CAM device of claim 6 , wherein the first PMOS transistor has a gate connected to the ground potential, and
wherein the second PMOS transistor has a gate to receive a pre-charge signal.
8. The CAM device of claim 6 , wherein the second PMOS transistor is configured to conduct and to allow the tank capacitor to charge the match line during a pre-charge phase of a compare operation.
9. The CAM device of claim 6 , wherein the first PMOS transistor is configured to charge the tank capacitor during an evaluation phase of a compare operation, and
wherein the second PMOS transistor is configured to be non-conductive and to isolate the charging node from the match line during the evaluation phase of the compare operation.
10. The CAM device of claim 6 , wherein the match line charging circuit further comprises:
a third PMOS transistor connected between the supply voltage and the charging node and having a gate; and
a NAND gate having a first input connected to the match line, a second input to receive a control signal, and an output coupled to the gate of the third PMOS transistor.
11. The CAM device of claim 10 , wherein the control signal is a clock signal.
12. The CAM device of claim 6 , wherein the match line charging circuit further comprises:
a third PMOS transistor connected between the supply voltage and the match line and having a gate connected to the second line.
13. The CAM device of claim 6 , wherein the match line charging circuit further comprises:
third and fourth PMOS transistors connected in series between the match line and the supply voltage,
wherein the third PMOS transistor has a gate connected to the second line, and
wherein the fourth PMOS transistor has a gate to receive a compare signal.
14. A row within a content addressable memory (CAM) device, the row comprising:
a plurality of CAM cells, each CAM cell from among the plurality of CAM cells being connected between a match line and a second line;
a match line discharge transistor connected between the second line and a ground potential and having a gate connected to the match line, wherein the match line discharge transistor selectively discharges the second line to the ground potential;
a match detect circuit having an input connected to the match line, a first power terminal connected to a supply voltage, and a second power terminal connected to the second line; and
a match line charging circuit comprising:
a first PMOS transistor connected between the supply voltage and a charging node;
a second PMOS transistor connected between the charging node and the match line; and
a tank capacitor connected between the charging node and the ground potential.
15. The row of claim 14 , wherein the first PMOS transistor has a gate connected to the ground potential, and
wherein the second PMOS transistor has a gate to receive a pre-charge signal.
16. The row of claim 14 , wherein the second PMOS transistor is configured to conduct and to allow the tank capacitor to charge the match line during a pre-charge phase of a compare operation.
17. The row of claim 14 , wherein the first PMOS transistor is configured to charge the tank capacitor during an evaluation phase of a compare operation, and
wherein the second PMOS transistor is configured to be non-conductive and to isolate the charging node from the match line during the evaluation phase of the compare operation.
18. The row of claim 14 , wherein the match line charging circuit further comprises:
a third PMOS transistor connected between the supply voltage and the charging node and having a gate; and
a NAND gate having a first input connected to the match line, a second input to receive a control signal, and an output coupled to the gate of the third PMOS transistor.
19. The row of claim 18 , wherein the control signal is a clock signal.
20. The row of claim 14 , wherein the match line charging circuit further comprises:
a third PMOS transistor connected between the supply voltage and the match line and having a gate connected to the second line.
21. The row of claim 14 , wherein the match line charging circuit further comprises:
third and fourth PMOS transistors connected in series between the match line and the supply voltage,
wherein the third PMOS transistor has a gate connected to the second line, and
wherein the fourth PMOS transistor has a gate to receive a compare signal.
22. The row of claim 14 , wherein the match detect circuit comprises:
a NAND gate connected between the supply voltage and the second line.
23. A content addressable memory (CAM) device including an array having a plurality of rows, wherein a respective row from among the plurality of rows comprises:
a plurality of CAM cells, each CAM cell from among the plurality of CAM cells being connected between a match line and a second line;
a match line discharge transistor connected between the second line and a ground potential and having a gate to receive a pre-charge signal; and
a match detect circuit having an input connected to the match line, a first power terminal connected to a supply voltage, and a second power terminal connected to the second line,
wherein the pre-charge signal is asserted during a pre-charge phase of a compare operation and is de-asserted during an evaluation phase of the compare operation.
24. The CAM device of claim 23 , wherein the match detect circuit comprises:
a NAND gate connected between the supply voltage and the second line.
25. The CAM device of claim 23 , wherein the respective row further comprises:
a match line charging circuit comprising:
a pre-charge transistor connected between the supply voltage and the match line and having a gate to receive an inverse of the pre-charge signal;
a PMOS pull-up transistor connected between the supply voltage and the match line and having a gate; and
a NAND gate having a first input connected to the match line, a second input to receive a clock signal, and an output coupled to the gate of the PMOS pull-up transistor.
26. The CAM device of claim 23 , wherein the respective row further comprises:
a match line charging circuit comprising:
a first PMOS transistor connected between the supply voltage and a charging node;
a second PMOS transistor connected between the charging node and the match line; and
a tank capacitor connected between the charging node and the ground potential.
27. The CAM device of claim 26 , wherein the first PMOS transistor has a gate connected to the ground potential, and
wherein the second PMOS transistor has a gate to receive the pre-charge signal.
28. The CAM device of claim 26 , wherein the second PMOS transistor is configured to conduct and to allow the tank capacitor to charge the match line during the pre-charge phase of the compare operation.
29. The CAM device of claim 26 , wherein the first PMOS transistor is configured to charge the tank capacitor during the evaluation phase of the compare operation, and
wherein the second PMOS transistor is configured to be non-conductive and to isolate the charging node from the match line during the evaluation phase of the compare operation.
30. The CAM device of claim 26 , wherein the match line charging circuit further comprises:
a third PMOS transistor connected between the supply voltage and the charging node and having a gate; and
a NAND gate having a first input connected to the match line, a second input to receive a control signal, and an output coupled to the gate of the third PMOS transistor.
31. The CAM device of claim 30 , wherein the control signal is a clock signal.
32. The CAM device of claim 26 , wherein the match line charging circuit further comprises:
a third PMOS transistor connected between the supply voltage and the match line and having a gate connected to the second line.
33. The CAM device of claim 26 , wherein the match line charging circuit further comprises:
third and fourth PMOS transistors connected in series between the match line and the supply voltage,
wherein the third PMOS transistor has a gate connected to the second line, and
wherein the fourth PMOS transistor has a gate to receive a compare signal.
34. The row of claim 14 , wherein the match line discharge transistor is configured to discharge the second line to the ground potential during a pre-charge phase of a compare operation and to disconnect the second line from the ground potential during an evaluation phase of the compare operation.
35. The CAM device of claim 23 , wherein the match line discharge transistor is configured to discharge the second line to the ground potential during the pre-charge phase of the compare operation based on the asserted pre-charge signal and to disconnect the second line from the ground potential during the evaluation phase of the compare operation based on the de-asserted pre-charge signal.