High-voltage semiconductor device
View Patent ↗A high-voltage semiconductor device is disclosed. The HV semiconductor device includes: a substrate; a well of first conductive type disposed in the substrate; a first doping region of second conductive type disposed in the p-well; a first isolation structure disposed in the well of first conductive type and surrounding the first doping region of second conductive type; and a first drift ring of second conductive type disposed between the first doping region of second conductive type and the first isolation structure.
1. A high-voltage semiconductor device, comprising:
a substrate;
a well of first conductive type disposed in the substrate;
a first doping region of second conductive type disposed in the well of first conductive type;
a first isolation structure disposed in the well of first conductive type and surrounding the first doping region of second conductive type; and
a first drift ring of second conductive type disposed between the first doping region of second conductive type and the first isolation structure.
2. The high-voltage semiconductor device of claim 1 , wherein the first isolation structure comprises a field oxide layer.
3. The high-voltage semiconductor device of claim 1 , further comprising a second doping region of second conductive type directly under the first doping region of second conductive type.
4. The high-voltage semiconductor device of claim 1 , further comprising a second isolation structure surrounding the first isolation structure.
5. The high-voltage semiconductor device of claim 4 , further comprising a first doping region of first conductive type disposed between the first isolation structure and the second isolation structure.
6. The high-voltage semiconductor device of claim 5 , further comprising a second doping region of first conductive type directly under the first doping region of first conductive type.
7. The high-voltage semiconductor device of claim 5 , further comprising a first drift ring of first conductive type disposed between the first doping region of first conductive type and the first isolation structure.
8. The high-voltage semiconductor device of claim 5 , further comprising a second drift ring of first conductive type disposed between the first doping region of first conductive type and the second isolation structure.
9. The high-voltage semiconductor device of claim 1 , further comprising a second drift ring of second conductive type directly under the first isolation structure.
10. The high-voltage semiconductor device of claim 1 , wherein the first conductive type comprises p-type and the second conductive type comprises n-type.
11. A high-voltage semiconductor device, comprising:
a substrate;
a well of first conductive type disposed in the substrate;
a first doping region of second conductive type disposed in the well of first conductive type;
a first isolation structure disposed in the well of first conductive type and surrounding the first doping region of second conductive type; and
a first drift ring of second conductive type disposed directly under the first isolation structure.
12. The high-voltage semiconductor device of claim 11 , wherein the first isolation structure comprises a field oxide layer.
13. The high-voltage semiconductor device of claim 11 , further comprising a second doping region of second conductive type directly under the first doping region of second conductive type.
14. The high-voltage semiconductor device of claim 11 , further comprising a second isolation structure surrounding the first isolation structure.
15. The high-voltage semiconductor device of claim 14 , further comprising a first doping region of first conductive type disposed between the first isolation structure and the second isolation structure.
16. The high-voltage semiconductor device of claim 15 , further comprising a second doping region of first conductive type directly under the first doping region of first conductive type.
17. The high-voltage semiconductor device of claim 15 , further comprising a first drift ring of first conductive type disposed between the first doping region of first conductive type and the first isolation structure.
18. The high-voltage semiconductor device of claim 15 , further comprising a second drift ring of first conductive type disposed between the first doping region of first conductive type and the second isolation structure.
19. The high-voltage semiconductor device of claim 11 , further comprising a second drift ring of second conductive type disposed between the first doping region of second conductive type and the first isolation structure.
20. The high-voltage semiconductor device of claim 11 , wherein the first conductive type comprises p-type and the second conductive type comprises n-type.