High speed, high density, low power die interconnect system
A system for interconnecting at least two die each die having a plurality of conducting layers and dielectric layers disposed upon a substrate which may include active and passive elements. In one embodiment there is at least one interconnect coupling at least one conducting layer on a side of one die to at least one conducting layer on a side of the other die. Another interconnect embodiment is a slug having conducting and dielectric layers disposed between two or more die to interconnect between the die. Other interconnect techniques include direct coupling such as rod, ball, dual balls, bar, cylinder, bump, slug, and carbon nanotube, as well as indirect coupling such as inductive coupling, capacitive coupling, and wireless communications. The die may have features to facilitate placement of the interconnects such as dogleg cuts, grooves, notches, enlarged contact pads, tapered side edges and stepped vias.
1. A method for forming a circuit, the method comprising:
locating a first die at a first location, the first die including:
a plurality of first die conducting layers separated by a plurality of first die dielectric layers; and
a first die contact located at a lateral side of the first die and electrically connected to at least one of the plurality of first die conducting layers;
locating a second die at a second location laterally offset from the first location, the second die including:
a plurality of second die conducting layers separated by a plurality of second die dielectric layers; and
a second die contact located at a lateral side of the second die and electrically connected to at least one of the plurality of second die conducting layers; and
interconnecting, with an interconnect, the first die contact with the second die contact.
2. The method of claim 1 , wherein the interconnect comprises a first interconnect on the first die contact and a second interconnect on the second die contact.
3. The method of claim 2 , wherein the first interconnect and the second interconnect comprise solder balls.
4. The method of claim 1 , wherein said interconnecting further comprises interconnecting, with the interconnect, the first die contact with a plurality of second die contacts.
5. The method of claim 4 , wherein the plurality of second die contacts are at a corresponding plurality of heights in the second die.
6. The method of claim 4 , wherein the interconnect comprises an interconnect bar.
7. The method of claim 1 , wherein the first die contact comprises a flange contact.
8. A method for forming a circuit, the method comprising:
locating a first die at a first location, the first die including:
a plurality of first die conducting layers separated by a plurality of first die dielectric layers; and
a first die contact located at a lateral side of the first die and electrically connected to at least one of the plurality of first die conducting layers;
locating a second die at a second location laterally offset from the first location, the second die including:
a plurality of second die conducting layers separated by a plurality of second die dielectric layers; and
a second die contact located at a lateral side of the second die and electrically connected to at least one of the plurality of second die conducting layers; and
interconnecting, with a slug, the first die contact with the second die contact;
wherein the slug includes a plurality of slug conducting layers separated by a plurality of slug dielectric layers.
9. The method of claim 8 , wherein said interconnecting further comprises interconnecting, with one of the plurality of slug conducting layers, the first die contact with the second die contact.
10. The method of claim 8 , wherein:
the slug includes a first tapered lateral side; and
the lateral side of the first die comprises a tapered lateral side configured to correspond to the first tapered lateral side of the slug.
11. The method of claim 10 , wherein:
the slug includes a second tapered lateral side; and
the lateral side of the second die comprises a tapered lateral side configured to correspond to the second tapered lateral side of the slug.
12. The method of claim 8 , wherein:
the slug includes a first terraced lateral side; and
the lateral side of the first die comprises a terraced lateral side configured to correspond to the first terraced lateral side of the slug.
13. The method of claim 12 , wherein:
the slug includes a second terraced lateral side; and
the lateral side of the second die comprises a terraced lateral side configured to correspond to the second terraced lateral side of the slug.
14. The method of claim 8 , wherein said interconnecting further comprises interconnecting, with the slug and a solder ball, the first die contact with the second die contact.
15. The method of claim 8 , wherein said interconnecting further comprises interconnecting, with the slug, the first die contact with a plurality of second die contacts.
16. A method for forming a die, the method comprising:
forming a first step and a second step with a plurality conducting layers separated by a plurality of dielectric layers, wherein the first step includes an extended portion of a first conducting layer and the second step includes an extended portion of a second conducting layer;
forming a first step contact pad on the first step, wherein the first step contact pad is electrically connected to the first conducting layer; and
forming a second step contact pad on the second step, wherein the second step contact pad is electrically connected to the second conducting layer.
17. The method of claim 16 , wherein:
the first step contact pad is exposed on a top surface of the first step; and
the second step contact pad is exposed on a top surface of the second step.
18. The method of claim 17 , wherein:
the first step contact pad is exposed on a riser surface of the first step; and
the second step contact pad is exposed on a riser surface of the second step.
19. The method of claim 16 , further comprising:
forming a plurality of metal layers; and
etching the plurality of metal layers to form the plurality of conducting layers.
20. The method of claim 16 , further comprising:
etching portions of the plurality of dielectric layers; and
filling the etched portions to form the plurality of conducting layers.