MEMS device having a movable electrode
A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.
1. A device, comprising:
a semiconductor substrate;
a MEMS including a fixed electrode and a movable electrode formed on an insulating layer that is formed on the semiconductor substrate;
a well formed on the semiconductor substrate below the fixed electrode, the well having a same polarity as a polarity of the semiconductor substrate;
an isolation well having an opposite polarity to the polarity of the well and surrounding the well in the semiconductor substrate, wherein the well and the isolation well are in a reverse bias state, while the isolation well and the semiconductor substrate are in a reverse bias state; and
a circuit.
2. The device according to claim 1 , satisfying Vp>0, and 0<Vp−Vwell<Vth, where Vp is a bias voltage of the MEMS, Vwell is a voltage applied to the well below the MEMS, Vth is a threshold voltage at which an inversion layer is formed in the well, wherein the semiconductor substrate is a p-type substrate and the well is a p-type well, while the isolation well is an n-type well.
3. The device according to claim 1 , satisfying Vp<0, and 0<Vp−Vwell<Vth, where Vp is a bias voltage of the MEMS, Vwell is a voltage applied to the well below the MEMS, Vth is a threshold voltage at which an inversion layer is formed in the well, wherein the semiconductor substrate is an n-type substrate and the well is an n-type well, while the isolation well is a p-type well.
4. The device according to claim 1 , wherein the circuit is an integrated circuit (IC).