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View Patent ↗A method for forming a device is disclosed. A substrate having first and second major surfaces is provided. A stress buffer is formed in the substrate. A through silicon via (TSV) contact is formed between the stress buffer. The stress buffer has a depth less than a depth of the TSV contact. The stress buffer alleviates stress created by the difference in coefficient thermal expansion (CTE) between the TSV contact and the substrate.
1. A method for forming a device comprising:
providing a semiconductor substrate having first and second major surfaces, the substrate includes first and second isolation trenches disposed on the first major surface in first and second substrate regions of the substrate, the isolation trenches extend partially through the substrate, wherein the trenches are filled with isolation material;
removing the isolation material from the first isolation trench to form a first stress buffer trench while the isolation material remains in the second isolation trench to form an isolation region;
filling the first stress buffer trench with a stress buffer material to form a stress buffer in the first substrate region; and
forming a through silicon via (TSV) contact in the first substrate region, the TSV contact has first and second portions, the second portion extends beyond a bottom of the stress buffer, wherein the stress buffer completely surrounds the first portion of the TSV contact and alleviates stress created by the difference in coefficient of thermal expansion (CTE) between the TSV contact and the semiconductor substrate.
2. The method of claim 1 comprising further etching the first isolation trench after removing the isolation material to increase a depth of the first isolation trench prior to filling it with the stress buffer material, the first isolation trench serves as the first stress buffer trench.
3. The method of claim 2 wherein:
a bottom of the TSV contact does not extend to the second major surface of the substrate; and
backgrinding the second major surface of the substrate to expose the bottom of the TSV contact.
4. The method of claim 2 further comprising:
forming an ILD layer on the first major surface of the semiconductor substrate; and
forming the TSV contact in the first substrate region through the ILD layer and the semiconductor substrate.
5. The method of claim 4 wherein:
a bottom of the TSV contact does not extend to the second major surface of the substrate; and
backgrinding the second major surface of the substrate to expose the bottom of the TSV contact.
6. The method of claim 1 wherein the first major surface of the semiconductor substrate comprises an ILD layer, and comprising:
patterning the ILD layer to form an ILD opening, wherein the ILD opening exposes the first isolation trench filled with the isolation material;
removing the isolation material from the first isolation trench, the first isolation trench serves as the first stress buffer trench;
filling the first stress buffer trench and ILD opening with the stress buffer material to form the stress buffer in the first substrate region and the ILD layer;
planarizing to remove excess stress buffer material over the ILD layer; and
forming the TSV contact in the first substrate region through the ILD layer and the semiconductor substrate.
7. The method of claim 6 wherein:
a bottom of the TSV contact does not extend to the second major surface of the substrate; and
backgrinding the second major surface of the substrate to expose the bottom of the TSV contact.
8. The method of claim 1 wherein the stress buffer is displaced from the TSV contact.
9. The method of claim 8 wherein the stress buffer material comprises material having elastic modulus less than about 100 GPa.
10. The method of claim 8 wherein the stress buffer material comprises polymer, plastic, organic or inorganic dielectrics, porous dielectric material or a combination thereof.
11. The method of claim 8 wherein the stress buffer material is deposited by spin-on techniques, chemical vapor deposition or sol-gel method.
12. The method of claim 1 wherein the TSV contact is formed through the stress buffer and the first portion of the TSV contact abuts the stress buffer.
13. The method of claim 12 wherein the stress buffer material comprises material having elastic modulus less than about 100 GPa.
14. The method of claim 12 wherein the stress buffer material comprises polymer, plastic, organic or inorganic dielectrics, porous dielectric material or a combination thereof.
15. The method of claim 12 wherein the stress buffer material is deposited by spin-on techniques, chemical vapor deposition or sol-gel method.
16. The method of claim 1 further comprising a plurality of stress buffers and a plurality of TSV contacts.
17. A method for forming a device comprising:
providing a semiconductor substrate having first and second major surfaces, the substrate includes a first isolation trench disposed on the first major surface in a first substrate region of the substrate, the first isolation trench extends partially through the semiconductor substrate, wherein the first isolation trench serves as a first stress buffer trench;
filling the first isolation trench with a stress buffer material to form a stress buffer in the substrate; and
forming a through silicon via (TSV) contact in the first substrate region, the TSV contact has first and second portions, the second portion extends beyond a bottom of the stress buffer, wherein the stress buffer material completely surrounds the first portion of the TSV contact and alleviates stress created by the difference in CTE between the TSV contact and the semiconductor substrate.
18. The method of claim 17 , prior to filling the first isolation trench with the stress buffer material, comprising:
removing isolation material in the first isolation trench;
etching the first isolation trench to increase a depth of the first isolation trench; and
filling the first isolation trench with the stress buffer material to form the stress buffer.
19. The method of claim 17 further comprising:
forming an ILD layer on the first major surface of the semiconductor substrate; and
forming the TSV contact in the first region of the substrate through the ILD layer and the stress buffer in the semiconductor substrate.
20. The method of claim 17 wherein:
the first major surface of the semiconductor substrate comprises an ILD layer;
patterning the ILD layer to form an ILD opening to expose the first isolation trench, wherein the first isolation trench is filled with an isolation material;
removing the isolation material from the first isolation trench;
filling the first isolation trench and the ILD opening with the stress buffer material to form the stress buffer in the first isolation trench and the ILD opening;
planarizing to remove excess stress buffer material over the ILD layer; and
forming the TSV contact in the stress buffer.
21. The method of claim 17 wherein the stress buffer does not abut the TSV contact.
22. The method of claim 17 wherein:
forming the TSV contact comprises etching a TSV via through the stress buffer; and
the TSV contact abuts the stress buffer.