IP Library › Granted Patent US 8,461,571
Granted Patent B2
US 8,461,571 · App. 13/172,097 · Granted Jun 11, 2013

Method and apparatus for converting photon energy to electrical energy

Inventor: Alan Colli (Cambridge, GB)
Assignee: Nokia Corporation
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Quick Facts
Patent No.
US 8,461,571
App. No.
13/172,097
Granted
Jun 11, 2013
Kind
B2
Abstract

In accordance with an example embodiment of the present invention, an apparatus including a nanopillar and a graphene film, the graphene film being in contact with a first end of the nanopillar, wherein the nanopillar includes a metal, the contact being configured to form an intrinsic field region in the graphene film, and wherein the apparatus is configured to generate a photocurrent from a photogenerated charge carrier in the intrinsic field region.

Claims (19)

1. An apparatus comprising a nanopillar and a graphene film, the graphene film being in contact with a first end of the nanopillar, wherein the nanopillar comprises a metal, the contact being configured to form an intrinsic field region in the graphene film, and wherein the apparatus is configured to generate a photocurrent from a photogenerated charge carrier in the intrinsic field region.

2. The apparatus of claim 1 , wherein the metal comprises at least one of the following: gold, platinum, palladium, and nickel.

3. The apparatus of claim 1 , wherein the nanopillar is one of the following: a nanowire, a single-walled nanotube, or a multi-walled nanotube.

4. The apparatus of claim 1 , wherein the graphene film comprises at least one layer of graphene.

5. The apparatus of claim 1 , wherein the apparatus comprises an array of substantially parallel nanopillars, and wherein the graphene film is in physical contact with multiple nanopillars at the same time to form a plurality of intrinsic field regions in the graphene film.

6. The apparatus of claim 5 , wherein the nanopillars have an average diameter of between 20 nm and 500 nm.

7. The apparatus of claim 5 , wherein the nanopillars have an average separation of between 100 nm and 400 nm.

8. The apparatus of claim 1 , wherein the apparatus comprises first and second electrical contacts, and wherein the graphene film is in contact with the first electrical contact.

9. A photodetector comprising the apparatus of claim 1 .

10. A method comprising:

providing a nanopillar;

providing a graphene film in contact with a first end of the nanopillar, wherein the contact is configured to form an intrinsic field region in the graphene film; and

configuring an apparatus to generate a photocurrent from a photogenerated charge carrier in the intrinsic field region.

11. A method according to claim 10 , wherein providing a nanopillar comprises providing a nanopillar that forms part of an array of nanopillars.

12. The method of claim 11 , wherein the array is fabricated by etching a substrate using a self-masking etching process.

13. The method of claim 12 , wherein the self-masking etching process is a deep reactive ion etching process.

14. The method of claim 12 , wherein the nanopillar is further provided by depositing a metal onto the etched substrate.

15. The method of claim 14 , wherein the metal is deposited using a sputtering process.

16. The method of claim 10 , wherein the method further comprises providing first and second electrical contacts such that the graphene film is in physical contact with the first electrical contact.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 16, 2015
From: NOKIA CORPORATION
To: NOKIA TECHNOLOGIES OY
Reel/Frame 035424/0652 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 16, 2011
From: COLLI, ALAN
To: NOKIA CORPORATION
Reel/Frame 026775/0461 →
Continuity (1)
Related Publication 20130001514A1 · Jan 3, 2013