Microelectromechanical resonators with thermally-actuated frequency tuning beams
View Patent ↗A microelectromechanical resonator includes a resonator body anchored to a substrate by at least a pair of tethers that suspend the resonator body opposite an underlying opening in the substrate. A first thermally-actuated tuning beam is provided, which is mechanically coupled to a first portion of the resonator body that is spaced apart from the pair of tethers. The first thermally-actuated tuning beam is configured to induce a mechanical stress in the resonator body by establishing a thermal expansion difference between the first thermally-actuated tuning beam and the resonator body in response to a passing of current through the first thermally-actuated tuning beam.
1. A microelectromechanical resonator, comprising:
a resonator body anchored to a substrate by at least a pair of tethers that suspend said resonator body opposite an underlying opening in the substrate; and
a first thermally-actuated tuning beam mechanically coupled to a first portion of said resonator body that is spaced apart from the pair of tethers, said first thermally-actuated tuning beam configured to induce a mechanical stress in said resonator body by establishing a thermal expansion difference between said first thermally-actuated tuning beam and said resonator body in response to a passing of current through said first thermally-actuated tuning beam.
2. The resonator of claim 1 , further comprising:
a piezoelectric layer on said resonator body and the pair of tethers;
first and second top electrodes overlapping a first and a second of the pair of tethers, respectively; and
a bottom electrode extending between said piezoelectric layer and said resonator body.
3. The resonator of claim 2 , wherein a point of mechanical coupling between said first thermally-actuated tuning beam and said resonator body is devoid of an electrode thereon that is coplanar with said first and second top electrodes.
4. The resonator of claim 2 , wherein a point of mechanical coupling between said first thermally-actuated tuning beam and said resonator body comprises a portion of said piezoelectric layer thereon.
5. The resonator of claim 2 , wherein said first thermally-actuated tuning beam is electrically isolated from said bottom electrode.
6. The resonator of claim 1 , wherein said first thermally-actuated tuning beam comprises single crystal silicon.
7. The resonator of claim 1 , further comprising:
a second thermally-actuated tuning beam mechanically coupled to a second portion of said resonator body that is spaced apart from the pair of tethers, said second thermally-actuated tuning beam configured to induce a mechanical stress in said resonator body by establishing a thermal expansion difference between said second thermally-actuated tuning beam and said resonator body in response to a passing of current through said second thermally-actuated tuning beam.
8. The resonator of claim 1 , wherein said first thermally-actuated tuning beam is mechanically coupled at about a mid-point thereof to the second portion of said resonator body.
9. The resonator of claim 8 , further comprising first and second tuning terminals electrically coupled to first and second ends of said first thermally-actuated tuning beam, respectively; and wherein said first thermally-actuated tuning beam is further configured to support a current therein in response to application of a voltage across the first and second tuning terminals.
10. The resonator of claim 9 , further comprising:
a second thermally-actuated tuning beam mechanically coupled to a second portion of said resonator body that is spaced apart from the pair of tethers, said second thermally-actuated tuning beam configured to induce a mechanical stress in said resonator body by establishing a thermal gradient across a point of mechanical coupling between said second thermally-actuated tuning beam and said resonator body in response to a passing of current through said second thermally-actuated tuning beam; and
a pair of tuning terminals electrically coupled to opposing ends of said second thermally-actuated tuning beam.
11. The resonator of claim 10 , wherein said second thermally-actuated tuning beam is mechanically coupled at about a mid-point thereof to the second portion of said resonator body.
12. A thin-film piezoelectric-on-semiconductor resonator, comprising:
a resonator body anchored to a substrate by at least a pair of tethers; and
a first U-shaped tuning beam mechanically coupled to a first portion of said resonator body, said first U-shaped tuning beam configured to induce a mechanical stress in said resonator body when said first U-shaped tuning beam is heated by a first current passing from a first end of the first U-shaped beam to a second end of the first U-shaped beam.
13. The resonator of claim 12 , further comprising a second U-shaped tuning beam mechanically coupled to a second portion of said resonator body, said second U-shaped tuning beam configured to induce a mechanical stress in said resonator body when said second U-shaped tuning beam is heated by a second current passing from a first end of the second U-shaped beam to a second end of the second U-shaped beam.
14. The resonator of claim 12 , further comprising:
a piezoelectric layer on said resonator body, the pair of tethers and said first U-shaped tuning beam;
first and second top electrodes overlapping a first and a second of the pair of tethers, respectively; and
a bottom electrode extending between said piezoelectric layer and said resonator body.
15. The resonator of claim 14 , wherein said first U-shaped tuning beam is electrically isolated from said bottom electrode.
16. A microelectromechanical resonator, comprising:
a resonator body anchored to a substrate by at least a pair of tethers; and
a first tuning beam mechanically coupled to a first portion of said resonator body that is spaced apart from the pair of tethers, said first tuning beam configured to induce a mechanical stress in said resonator body when said first tuning beam is heated by a first current passing therethrough.
17. The resonator of claim 16 , further comprising:
a piezoelectric layer on said resonator body and the pair of tethers;
first and second top electrodes overlapping a first and a second of the pair of tethers, respectively; and
a bottom electrode extending between said piezoelectric layer and said resonator body.
18. The resonator of claim 17 , wherein said first tuning beam is electrically isolated from said bottom electrode.
19. The resonator of claim 17 , wherein no portions of said first and second top electrodes overlap said first tuning beam.
20. The resonator of claim 16 , further comprising:
a second tuning beam mechanically coupled to a second portion of said resonator body that is diametrically opposite the first portion of said resonator body, said second tuning beam configured to induce a mechanical stress in said resonator body when said second tuning beam is heated by a second current passing therethrough.
21. A microelectromechanical resonator, comprising:
a resonator body anchored to a substrate by at least a pair of tethers that suspend said resonator body opposite an underlying opening in the substrate; and
a first thermally-actuated tuning beam mechanically coupled to a first one of the pair of tethers, said first thermally-actuated tuning beam configured to induce a mechanical stress in the first one of the pair of tethers by establishing a thermal expansion difference between said first thermally-actuated tuning beam and the first one of the pair of tethers in response to a passing of current through said first thermally-actuated tuning beam.
22. The resonator of claim 21 , further comprising:
a second thermally-actuated tuning beam mechanically coupled to a second one of the pair of tethers, said second thermally-actuated tuning beam configured to induce a mechanical stress in the second one of the pair of tethers by establishing a thermal expansion difference between said second thermally-actuated tuning beam and the second one of the pair of tethers in response to a passing of current through said second thermally-actuated tuning beam.