Photonic systems and methods of forming photonic systems
Some embodiments include photonic systems. The systems may include a silicon-containing waveguide configured to direct light along a path, and a detector proximate the silicon-containing waveguide. The detector may comprise a detector material which has a lower region and an upper region, with the lower region having a higher concentration of defects than the upper region. The detector material may comprise germanium in some embodiments. Some embodiments include methods of forming photonic systems.
1. A photonic system, comprising:
a silicon-containing waveguide over a monocrystalline silicon base and configured to direct light along a path;
an opening extending into the base;
a liner narrowing the opening;
a germanium-containing detector material over the base and extending into the narrowed opening; the detector material being comprised by a detector configured to detect light within the waveguide; a lower region of the germanium-containing detector material within the narrowed opening having a higher concentration of defects than an upper region of the germanium-containing detector material above the narrowed opening;
wherein the upper region is wider along a cross-section than the lower region; and
wherein the upper region extends laterally outwardly beyond the liner so that the upper region is across an upper surface of the liner.
2. The photonic system of claim 1 wherein the liner comprises electrically insulative material.
3. The photonic system of claim 1 wherein the liner comprises electrically conductive material.
4. A photonic system, comprising:
a silicon-containing waveguide over a monocrystalline silicon base and configured to direct light along a path;
an opening extending into the base;
a liner narrowing the opening;
a germanium-containing detector material over the base and extending into the narrowed opening; the detector material being comprised by a detector configured to detect light within the waveguide; a lower region of the germanium-containing detector material within the narrowed opening having a higher concentration of defects than an upper region of the germanium-containing detector material above the narrowed opening; and
wherein the silicon-containing waveguide is a line spaced from said base by one or more dielectric materials; wherein the liner comprises a liner material; and wherein the liner material is along sidewalls of the silicon-containing waveguide line.
5. The photonic system of claim 4 wherein the germanium-containing detector material is taller than the silicon-containing waveguide.
6. The photonic system of claim 4 wherein the germanium-containing detector material is not taller than the silicon-containing waveguide.
7. A method of forming a photonic system, comprising:
etching an opening into a monocrystalline silicon base;
lining sidewalls of the opening with liner material, monocrystalline silicon of the base being exposed along a bottom of the lined opening;
epitaxially growing a detector material from the exposed monocrystalline silicon along the bottom of the lined opening; the detector material having a lower region within the lined opening and having an upper region over the lower region; the lower region having a higher concentration of defects than the upper region; the upper region being outward of the opening and being wider along a cross-section than the lower region; the upper region extending laterally outward of the lower region and being across the liner material; and
forming a silicon-containing waveguide over the base and proximate the detector material.
8. The method of claim 7 wherein the opening has a depth of less than or equal to about 400 nm and a maximum width of less than or equal to about 400 nm.
9. The method of claim 7 wherein the detector material is epitaxially grown germanium, and wherein the epitaxial growth of the germanium comprises:
growing the lower region while maintaining a temperature of the epitaxially growing germanium at less than or equal to about 350° C.; and
growing the upper region while maintaining a temperature of the epitaxially growing germanium at greater than or equal to about 600° C.
10. The method of claim 9 further comprising providing p-type dopant within a top region of the detector material and providing n-type dopant within a region of the base directly adjacent the detector material.
11. The method of claim 9 wherein the silicon-containing waveguide is formed after the detector material.
12. A method of forming a photonic system, comprising:
etching an opening into a monocrystalline silicon base;
lining sidewalls of the opening with liner material, monocrystalline silicon of the base being exposed along a bottom of the lined opening;
epitaxially growing a detector material from the exposed monocrystalline silicon along the bottom of the lined opening; the detector material having a lower region within the lined opening and having an upper region over the lower region; the lower region having a higher concentration of defects than the upper region;
forming an oxide around an outer periphery of the detector material;
forming silicon-containing material over the base and along the oxide;
patterning the silicon-containing material into a silicon-containing waveguide proximate the detector material; and
wherein the detector material is epitaxially grown germanium, and wherein the epitaxial growth of the germanium comprises: (1) growing the lower region while maintaining a temperature of the epitaxially growing germanium at less than or equal to about 350° C., and (2) growing the upper region while maintaining a temperature of the epitaxially growing germanium at greater than or equal to about 600° C.
13. The method of claim 12 wherein the detector material and the silicon-containing material are subjected to a planarizing etch so that the detector material and the waveguide are formed to be at about a common height as one another.
14. A method of forming a photonic system, comprising:
etching an opening into a monocrystalline silicon base;
lining sidewalls of the opening with liner material, monocrystalline silicon of the base being exposed along a bottom of the lined opening;
epitaxially growing a detector material from the exposed monocrystalline silicon along the bottom of the lined opening; the detector material having a lower region within the lined opening and having an upper region over the lower region; the lower region having a higher concentration of defects than the upper region;
forming a silicon-containing waveguide over the base and proximate the detector material;
wherein the detector material is epitaxially grown germanium, and wherein the epitaxial growth of the germanium comprises: (1) growing the lower region while maintaining a temperature of the epitaxiallv growing germanium at less than or equal to about 350° C., and (2) growing the upper region while maintaining a temperature of the epitaxiallv growing germanium at greater than or equal to about 600° C.; and
wherein the silicon-containing waveguide is formed before the detector material.
15. The method of claim 14 wherein the detector material is formed to be taller than the waveguide.
16. The method of claim 14 comprising:
forming the liner material along a periphery of the opening and around an outer periphery of the waveguide; and
anistropically etching the liner material to form the lined opening, and to form sidewall liners along sidewalls of the waveguide.
17. The method of claim 16 wherein the liner material is a dielectric material.