Method for forming pattern and developer

1. A pattern-forming method comprising:

providing a negative developer including an organic solvent and a nitrogen-containing compound;

forming a resist film on a substrate using a photoresist composition including (A) a polymer and (B) a radiation-sensitive acid generator, the polymer (A) including a structural unit (I) including an acid-labile group that dissociates to generate a polar group due to an acid, solubility of the polymer (A) in the negative developer decreasing upon dissociation of the acid-labile group, the polymer (A) being produced by polymerizing a monomer having an ethylenically unsaturated bond;

exposing the resist film to dissociate the acid-labile group and to generate the polar group in the polymer (A) in an exposed area of the resist film; and

developing the resist film using the negative developer,

wherein the nitrogen-containing compound interacts with the polar group to further decrease the solubility of the polymer (A) in an exposed area of the resist film in the negative developer.

2. The pattern-forming method according to claim 1 , wherein the nitrogen-containing compound is a compound shown by a formula (1),

wherein R 1 and R 2 individually represent a hydrogen atom, a hydroxyl group, a formyl group, an alkoxy group, an alkoxycarbonyl group, a chain-like hydrocarbon group having 1 to 30 carbon atoms, an alicyclic hydrocarbon group having 3 to 30 carbon atoms, an aromatic hydrocarbon group having 6 to 14 carbon atoms, or a group formed by two or more of these groups, R 3 represents a hydrogen atom, a hydroxyl group, a formyl group, an alkoxy group, an alkoxycarbonyl group, an n-valent chain-like hydrocarbon group having 1 to 30 carbon atoms, an n-valent alicyclic hydrocarbon group having 3 to 30 carbon atoms, an n-valent aromatic hydrocarbon group having 6 to 14 carbon atoms, or an n-valent group formed by two or more of these groups, n is an integer equal to or larger than 1, provided that a plurality of R 1 and a plurality of R 2 may be either a same or different when n is 2 or more, and two of R 1 to R 3 may bond to form a cyclic structure together with the nitrogen atom bonded thereto.

3. The pattern-forming method according to claim 1 , wherein the structural unit (1) is a structural unit that includes a group shown by a formula (2),

wherein R p represents an acid-labile group.

4. The pattern-forming method according to claim 3 , wherein the acid-labile group represented by R p is a group shown by a formula (4),

wherein R p1 to R p3 represent an alkyl group having 1 to 4 carbon atoms or an alicyclic hydrocarbon group having 4 to 20 carbon atoms, provided that some or all of the hydrogen atoms of the alkyl group or the alicyclic hydrocarbon group may be substituted with a substituent, and R p2 and R p3 may bond to form a divalent alicyclic hydrocarbon group having 4 to 20 carbon atoms together with the carbon atom bonded thereto.

5. The pattern-forming method according to claim 1 , wherein the structural unit (I) is a structural unit shown by a formula (3),

wherein R 4 represents a hydrogen atom, a methyl group, or a trifluoromethyl group, and R p represents an acid-labile group.

6. The pattern-forming method according to claim 1 , wherein the organic solvent included in the developer is at least one organic solvent selected from the group consisting of an ether solvent, a ketone solvent, and an ester solvent.

7. The pattern-forming method according to claim 1 , wherein the nitrogen-containing compound is a compound shown by a formula (1),

wherein R 1 and R 2 individually represent a hydrogen atom, a hydroxyl group, a formyl group, an alkoxy group, an alkoxycarbonyl group, a chain-like hydrocarbon group having 1 to 30 carbon atoms, an monocyclic aliphatic hydrocarbon group having 3 to 30 carbon atoms, an aromatic hydrocarbon group having 6 to 14 carbon atoms, or a group formed by two or more of these groups, R 3 represents a hydrogen atom, a hydroxyl group, a formyl group, an alkoxy group, an alkoxycarbonyl group, an n-valent chain-like hydrocarbon group having 1 to 30 carbon atoms, an n-valent monocyclic aliphatic hydrocarbon group having 3 to 30 carbon atoms, an n-valent aromatic hydrocarbon group having 6 to 14 carbon atoms, or an n-valent group formed by two or more of these groups, n is an integer equal to or larger than 1, provided that a plurality of R 1 and a plurality of R 2 may be either a same or different when n is 2 or more, and two of R 1 to R 3 may bond to form a monocyclic structure together with the nitrogen atom bonded thereto.

8. The pattern-forming method according to claim 1 , wherein the organic solvent is methyl n-amyl ketone, n-butyl acetate, anisole, or a mixture thereof.

9. A pattern-forming method comprising:

providing a negative developer including an organic solvent and a nitrogen-containing compound;

forming a resist film on a substrate using a photoresist composition including (A) a polymer and (B) a radiation-sensitive acid generator, the polymer (A) including a structural unit (I) including an acid-labile group that dissociates to generate a polar group due to an acid, solubility of the polymer (A) in the negative developer decreasing upon dissociation of the acid-labile group;

exposing the resist film to dissociate the acid-labile group and to generate the polar group in the polymer (A) in an exposed area of the resist film; and

developing the resist film using the negative developer,

wherein the nitrogen-containing compound interacts with the polar group to further decrease the solubility of the polymer (A) in an exposed area of the resist film in the negative developer,

wherein the nitrogen-containing compound is a mono(cyclo)alkylamine, a di(cyclo)alkylamine, a tri(cyclo)alkylamine, an aromatic amine, a (cyclo)alkylamine compound including two nitrogen atoms, a nitrogen-containing heterocyclic compound, or a combination thereof.