High Voltage Device and Method for Optical Devices
A light emitting device comprising a gallium and nitrogen containing substrate. The device also has an electrically isolating material grown between the substrate and an active region such that the light emitting device is operable at a voltage greater than 10V.
1 . A light emitting diode device comprising:
a bulk gallium and nitrogen containing substrate having a bulk resistivity of about 0.001 ohm-cm to about 100 ohm-cm, the substrate having a surface region;
electrical isolation material overlying the surface region and having an average resistivity of at least about 1 ohm-cm;
an active region of epitaxially grown gallium and nitrogen containing material over the isolation material, the active region including an n-type region and a p-type region to form at least one LED device; and
an alternating current source coupled to the at least one LED device.
2 . The device of claim 1 further comprising a bridge rectifier circuit having diodes fabricated from the epitaxially grown gallium and nitrogen containing material.
3 . The device of claim 1 wherein the substrate has a backside region with a roughened surface for light extraction.
4 . The device of claim 1 wherein the electrical isolation material has resistivity of at least about 100 ohm-cm.
5 . The device of claim 4 wherein the electrical isolation material comprises aluminum nitride.
6 . The device of claim 5 wherein the electrical isolation material comprises In x Al 1-x N where (0<x<1).
7 . The device of claim 5 wherein the electrical isolation material comprises In x Al y Ga (1-x-y) N where (0<x<1), (0<y<1), and x+y<1.
8 . The device of claim 1 wherein the electrical isolation material comprises at least one of Fe, Zn, Mg, O, and H.
9 . The device of claim 7 wherein the electrical isolation material comprises a graded layer of insulating material consisting of Al x In y Ga (1-x-y) N where (0<x<1), (0<y<1), and x+y<1.
10 . The device of claim 1 wherein the electrical isolation material has a thickness greater than about 10 nm.
11 . A light emitting diode device comprising:
an isolation material configured from a surface of a bulk gallium and nitrogen containing material and having an average resistivity of at least about 1 ohm-cm;
an active region of epitaxially grown gallium and nitrogen containing material overlying the isolation material, the active region including an n-type region and a p-type region to form at least one LED device; and
an alternating current power supply coupled to the at least one LED device.
12 . The device of claim 11 wherein the isolation material includes impurities to increase its resistivity.
13 . The device of claim 12 wherein the impurities includes at least one of Fe, Zn, Mg, O, and H.
14 . The device of claim 11 wherein the isolation material comprises multiple layers of insulating material consisting of Al x In y Ga (1-x-y) N where (0<x<1), (0<y<1), and x+y<1.
15 . The device of claim 11 wherein the isolation material comprises a graded layer of insulating material consisting of Al x In y Ga (1-x-y) N where (0<x<1), (0<y<1), and x+y<1.