Patent Assignment
Reel/Frame 033664/0560
Release of Security Interest in Intellectual Property Collateral at Reel/Frame No. 32148/0851
Recorded: 2014-08-29
Received: 2014-08-29
Pages: 13
Assignor
BRIDGE BANK, NATIONAL ASSOCIATION
Executed: 2014-08-29
Assignee
SORAA, INC.
6500 KAISER DRIVE, FREMONT, CA, 94555, UNITED STATES
Covered Properties
(86)
Accessories for Led Lamps
Application:
14/014,112 →
Power Light Emitting Diode and Method with Current Density Operation
Application:
13/931,359 →
Polycrystalline Group Iii Metal Nitride with Getter and Method of Making
Application:
13/894,220 →
Led Lamps with Improved Quality of Light
Application:
13/886,547 →
Light Emitting Diodes with Low Refractive Index Material Layers to Reduce Light Guiding Effects
Application:
13/787,582 →
Large Area Nitride Crystal and Method for Making It
Application:
13/731,453 →
Polarized White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Transparent Phosphors
Application:
13/623,788 →
Optical Devices Having Reflection Mode Wavelength Material
Application:
13/600,988 →
Polarization Direction of Optical Devices Using Selected Spatial Configurations
Application:
13/553,691 →
Method and Surface Morphology of Non-Polar Gallium Nitride Containing Substrates
Application:
13/548,635 →
Method and Surface Morphology of Non-Polar Gallium Nitride Containing Substrates
Application:
13/548,770 →
Large Area Nonpolar or Semipolar Gallium and Nitrogen Containing Substrate and Resulting Devices
Application:
13/548,931 →
Heatsink
Application:
29/423,725 →
System and Method for Led Packaging
Application:
13/482,956 →
High Intensity Light Source with Interchangeable Optics
Application:
13/480,767 →
Miscut Bulk Substrates
Application:
13/431,834 →
Nitride Crystal with Removable Surface Layer and Methods of Manufacture
Application:
13/425,304 →
Techniques of Forming Ohmic Contacts on Gan Light Emitting Diodes
Application:
13/419,325 →
Method and Resulting Device for Processing Phosphor Materials in Light Emitting Diode Applications
Application:
13/359,846 →
Gallium and Nitrogen Containing Triangular or Diamond-Shaped Configuration for Optical Devices
Application:
13/357,578 →
Method for Growth of Indium-Containing Nitride Films
Application:
13/346,507 →
High Pressure Apparatus and Method for Nitride Crystal Growth
Application:
13/343,563 →
Method for Manufacture of Bright GaN LEDs Using a Selective Removal Process
Application:
13/304,182 →
Method and System for Dicing Substrates Containing Gallium and Nitrogen Material
Application:
13/298,617 →
High Temperature Led System Using an Ac Power Source
Application:
13/298,905 →
Gallium and Nitrogen Containing Trilateral Configuration for Optical Devices
Application:
13/281,221 →
Method of Making Bulk Ingan Substrates and Devices Thereon
Application:
13/272,981 →
High Intensity Light Source
Application:
13/269,193 →
Process and Apparatus for Large-Scale Manufacturing of Bulk Monocrystalline Gallium-Containing Nitride
Application:
13/226,249 →
System and Method for Selected Pump Leds with Multiple Phosphors
Application:
13/211,145 →
Heatsink for Led
Application:
29/399,524 →
Heatsink
Application:
29/399,523 →
Power Light Emitting Diode and Method with Current Density Operation
Application:
12/936,238 →
Techniques of Forming Ohmic Contacts on Gan Light Emitting Diodes
Application:
13/184,160 →
High Voltage Device and Method for Optical Devices
Application:
13/179,346 →
Ammonothermal Method for Growth of Bulk Gallium Nitride
Application:
13/175,739 →
Method for Synthesis of High Quality Large Area Bulk Gallium Based Crystals
Application:
12/988,772 →
Quantum dot wavelength conversion for hermetically sealed optical devices
Application:
13/135,087 →
Gallium and Nitrogen Containing Triangular or Diamond-Shaped Configuration for Optical Devices
Application:
13/163,482 →
Singulation Method and Resulting Device of Thick Gallium and Nitrogen Containing Substrates
Application:
13/163,498 →
Large Area Nitride Crystal and Method for Making It
Application:
13/160,307 →
Semi-insulating Group III Metal Nitride and Method of Manufacture
Application:
13/041,199 →
Highly Polarized White Light Source By Combining Blue LED on Semipolar or Nonpolar GaN with Yellow LED on Semipolar or Nonpolar GaN
Application:
12/995,946 →
Illumination Source and Manufacturing Methods
Application:
13/025,849 →
Illumination Source with Reduced Inner Core Size
Application:
13/025,833 →
Illumination Source with Direct Die Placement
Application:
13/025,791 →
Modular Led Lamp and Manufacturing Methods
Application:
13/025,860 →
White Light Apparatus and Method
Application:
13/019,897 →
Reflection Mode Package for Optical Devices Using Gallium and Nitrogen Containing Materials
Application:
13/019,521 →
Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials
Application:
13/014,622 →
High Pressure Apparatus and Method for Nitride Crystal Growth
Application:
13/013,697 →
Gallium-Nitride-On-Handle Substrate Materials and Devices and Method of Manufacture
Application:
13/012,674 →
Optical Device with Wavelength Selective Reflector
Application:
12/914,789 →
High Pressure Apparatus with Stackable Rings
Application:
12/891,668 →
Reflection Mode Wavelength Conversion Material for Optical Devices Using Non-Polar or Semipolar Gallium Containing Materials
Application:
12/887,207 →
Multi Color Active Regions for White Light Emitting Diode
Application:
12/880,803 →
System and Method for Led Packaging
Application:
12/879,784 →
Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices
Application:
12/859,153 →
Back-End Processes for Substrates Re-Use
Application:
12/858,379 →
High Indium Containing Ingan Substrates for Long Wavelength Optical Devices
Application:
12/785,404 →
Polarized White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Transparent Phosphors
Application:
12/754,886 →
Method and Structure for Manufacture of Light Emitting Diode Devices Using Bulk Gan
Application:
12/749,476 →
Polarization Direction of Optical Devices Using Selected Spatial Configurations
Application:
12/720,593 →
Plant and Method for Large-Scale Ammonothermal Manufacturing of Gallium Nitride Boules
Application:
12/697,171 →
Polycrystalline Group Iii Metal Nitride with Getter and Method of Making
Application:
12/634,665 →
Photonic-Crystal Light Emitting Diode and Method of Manufacture
Application:
12/569,844 →
Microcavity Light Emitting Diode Method of Manufacture
Application:
12/569,337 →
Textured-Surface Light Emitting Diode and Method of Manufacture
Application:
12/569,841 →
Large-Area Bulk Gallium Nitride Wafer and Method of Manufacture
Application:
12/556,562 →
Large-Area Seed for Ammonothermal Growth of Bulk Gallium Nitride and Method of Manufacture
Application:
12/556,558 →
Nitride Crystal with Removable Surface Layer and Methods of Manufacture
Application:
12/546,458 →
Process and Apparatus for Large-Scale Manufacturing of Bulk Monocrystalline Gallium-Containing Nitride
Application:
12/534,857 →
Process for Large-Scale Ammonothermal Manufacturing of Gallium Nitride Boules
Application:
12/534,844 →
Process and Apparatus for Growing a Crystalline Gallium-Containing Nitride Using an Azide Mineralizer
Application:
12/534,849 →
Basket Process and Apparatus for Crystalline Gallium-Containing Nitride
Application:
12/534,848 →
Apparatus and Method for Seed Crystal Utilization in Large-Scale Manufacturing of Gallium Nitride
Application:
12/534,843 →
High Quality Chlorine-Containing Large Area Bulk Non-Polar or Semipolar Gallium Based Substrates and Methods
Application:
12/497,969 →
Method and Surface Morphology of Non-Polar Gallium Nitride Containing Substrates
Application:
12/497,289 →
COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs
Application:
12/491,176 →
Selective Area Epitaxy Growth Method and Structure for Multi-Colored Devices
Application:
12/484,924 →
Heater Device and Method for High Pressure Processing of Crystalline Materials
Application:
12/484,095 →
Selective Area Epitaxy Growth Method and Structure
Application:
12/482,440 →
High Pressure Apparatus and Method for Nitride Crystal Growth
Application:
12/478,736 →
High Pressure Apparatus and Method for Nitride Crystal Growth
Application:
12/334,418 →
High Pressure Apparatus and Method for Nitride Crystal Growth
Application:
12/133,364 →
Capsule for High Pressure Processing and Method of Use for Supercritical Fluids
Application:
12/133,365 →