Method and system for dicing substrates containing gallium and nitrogen material
View Patent ↗The present disclosure relates generally to semiconductor techniques. More specifically, embodiments of the present disclosure provide methods for efficiently dicing substrates containing gallium and nitrogen material. Additionally the present disclosure provide techniques resulting in a optical device comprising a substrate having three or more corners, where at least one of the corners is defined by a dislocation bundle characterized by a diameter of less than 100 microns, the gallium and nitrogen containing substrate having a predefined portion free from dislocation bundle centers, an active region containing one or more active layers, the active region being positioned within the predefined region; and a conductive region formed within the predefined region.
1. An optical device comprising:
a substrate, the substrate having three or more corners, at least one of the corners having at least one dislocation bundle characterized by a diameter of less than 100 microns, the substrate having a predefined portion free from dislocation bundle centers, the substrate containing gallium and nitrogen material;
an active region containing one or more active layers, the active region being positioned within the predefined region; and
a conductive region formed within the predefined region.
2. The optical device of claim 1 , wherein the substrate is characterized by a substantially triangular shape.
3. The optical device of claim 1 , wherein the substrate is characterized by a substantially rectangular shape.
4. The optical device of claim 1 , wherein the substrate is characterized by a substantially diamond shape.
5. The optical device of claim 1 , wherein the substrate is characterized by a substantially square shape.
6. The optical device of claim 1 , wherein at least one edge of the substrate is formed by a scribing process.
7. The optical device of claim 1 , wherein the predefined region comprises a least a portion of the region characterized by a conductivity of at least 3 E17 cm −3 .
8. A method for manufacturing optical devices comprising:
providing a substrate, the substrate comprising gallium and nitrogen material, the substrate having a plurality of dislocation bundle centers, the plurality of dislocation bundle centers being aligned according to a predetermined pattern;
locating at least a first dislocation bundle center and a second dislocation bundle center;
defining a first line, the first line connecting at least the first dislocation bundle center and the second dislocation bundle center, the first line being substantially straight;
locating a third dislocation bundle center;
defining a second line, the second line connecting at least the first dislocation bundle center and the third dislocation bundle center, the second line being substantially straight;
dicing the substrate along the first line;
dicing the substrate along the second line;
forming the optical device, the optical device having at least a first corner, and second corner, and a third corner, with a dislocation bundle center being positioned substantially at least one of the first corner, the second corner, and the third corner; and
defining a conductive region on the optical device, the conductive region being free from dislocation bundle centers.
9. The method of claim 8 , further comprising forming active layers on the optical device.
10. The method of claim 8 , further comprising forming a cutting pattern based on the predetermined pattern, the cutting pattern comprising a plurality of substantially straight lines.
11. The method of claim 8 , wherein the optical device is characterized by a triangular shape.
12. The method of claim 8 , further comprising breaking the substrate along the first line.
13. A method for manufacturing optical devices comprising:
providing a substrate, the substrate comprising gallium and nitrogen material, the substrate having a plurality of dislocation bundle centers, the plurality of dislocation bundle centers being aligned according to a predetermined pattern;
locating at least a first dislocation bundle center and a second dislocation bundle center;
defining a first line, the first line connecting at least the first dislocation bundle center and the second dislocation bundle center, the first line being substantially straight;
locating a third dislocation bundle center;
defining a second line, the second line connecting at least the first dislocation bundle center and the third dislocation bundle center, the second line being substantially straight;
cutting the substrate along the first line;
cutting the substrate along the second line; and
forming the optical device, the optical device having a first edge formed by cutting the substrate along the first line.
14. The method of claim 13 , wherein each of the dislocation bundle centers is characterized by a diameter of less than 50 microns.
15. The method of claim 13 , wherein cutting the substrate along the first line removes a portion of substrate material, the portion of substrate material being characterized by a thickness of at least 30 microns.
16. The method of claim 13 , further comprising forming an active region on the optical device.
17. The method of claim 13 , further comprising forming a conductive region.
18. The method of claim 13 , further comprising cutting the substrate along a third line, the third line being substantially straight and connecting at least the second dislocation bundle center and the third dislocation bundle center.
19. The method of claim 13 , further comprising forming an LED using the optical device.
20. The method of claim 13 , further comprising forming a laser using the optical device.