IP Library › Assignment 051974/0413
Patent Assignment
Reel/Frame 051974/0413

Release of Security Interest

Recorded: 2020-02-20 Received: 2020-02-20 Pages: 13
Assignors
EL DORADO INVESTMENT COMPANY
Executed: 2020-02-19
TCPC SBIC, LP
Executed: 2020-02-19
TENNEBAUM CAPITAL PARTNERS, LLC
Executed: 2020-02-19
Assignee
SORAA, INC.
6500 KAISER DRIVE, FREMONT, CA, 94555, UNITED STATES
Covered Properties (84)
Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate
Application: 16/550,947 →
Method of Forming a Gan Single Crystal Comprising Disposing a Nucleation Center in a First Region, a Gan Source Material in a Second Region, and Establishing a Temperature Distribution
Application: 16/246,065 →
Oxygen-Doped Group Iii Metal Nitride and Method of Manufacture
Application: 15/865,391 →
Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate
Application: 15/426,770 →
Crystalline Gallium Nitride Containing Flourine
Application: 15/061,069 →
Polarized White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Transparent Phosphors
Application: 14/979,027 →
White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Phosphors
Application: 14/882,893 →
Gallium-Nitride-On-Handle Substrate Materials and Devices and Method of Manufacture
Application: 14/301,520 →
Surface Morphology of Non-Polar Gallium Nitride Containing Substrates
Application: 14/302,250 →
System and Method for Providing Color Light Sources in Proximity to Predetermined Wavelength Conversion Structures
Application: 14/256,670 →
Accessories for Led Lamp Systems
Application: 14/166,692 →
Dense-Luminescent-Materials-Coated Violet Leds
Application: 14/135,098 →
High-Temperature Ultra-Low Ripple Multi-Stage Led Driver and Led Control Circuits
Application: 14/075,936 →
Indium Gallium Nitride Light Emitting Devices
Application: 14/054,234 →
Power Light Emitting Diode and Method with Uniform Current Density Operation
Application: 14/040,379 →
White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Phosphors
Application: 14/035,693 →
Accessories for Led Lamps
Application: 14/014,112 →
Illumination Source with Direct Die Placement
Application: 13/959,422 →
Power Light Emitting Diode and Method with Current Density Operation
Application: 13/931,359 →
Accessories for Led Lamps
Application: 13/909,752 →
Compact Lens for High Intensity Light Source
Application: 13/865,760 →
Light Emitting Diodes with Low Refractive Index Material Layers to Reduce Light Guiding Effects
Application: 13/787,582 →
Large Area Nitride Crystal and Method for Making It
Application: 13/731,453 →
Polarized White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Transparent Phosphors
Application: 13/623,788 →
Surface Morphology of Non-Polar Gallium Nitride Containing Substrates
Application: 13/621,485 →
Optical Devices Having Reflection Mode Wavelength Material
Application: 13/600,988 →
Polarization Direction of Optical Devices Using Selected Spatial Configurations
Application: 13/553,691 →
Method and Surface Morphology of Non-Polar Gallium Nitride Containing Substrates
Application: 13/548,635 →
Method and Surface Morphology of Non-Polar Gallium Nitride Containing Substrates
Application: 13/548,770 →
Large Area Nonpolar or Semipolar Gallium and Nitrogen Containing Substrate and Resulting Devices
Application: 13/548,931 →
Heatsink
Application: 29/423,725 →
System and Method for Led Packaging
Application: 13/482,956 →
Miscut Bulk Substrates
Application: 13/431,834 →
Techniques of Forming Ohmic Contacts on Gan Light Emitting Diodes
Application: 13/419,325 →
White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Phosphors
Application: 13/360,535 →
Gallium and Nitrogen Containing Triangular or Diamond-Shaped Configuration for Optical Devices
Application: 13/357,578 →
Method for Growth of Indium-Containing Nitride Films
Application: 13/346,507 →
System and Method for Providing Color Light Sources in Proximity to Predetermined Wavelength Conversion Structures
Application: 13/328,978 →
Method for Manufacture of Bright GaN LEDs Using a Selective Removal Process
Application: 13/304,182 →
Method and System for Dicing Substrates Containing Gallium and Nitrogen Material
Application: 13/298,617 →
High Temperature Led System Using an Ac Power Source
Application: 13/298,905 →
Gallium and Nitrogen Containing Trilateral Configuration for Optical Devices
Application: 13/281,221 →
Method of Making Bulk Ingan Substrates and Devices Thereon
Application: 13/272,981 →
High Intensity Light Source
Application: 13/269,193 →
System and Method for Selected Pump Leds with Multiple Phosphors
Application: 13/211,145 →
Heatsink
Application: 29/399,523 →
Heatsink for Led
Application: 29/399,524 →
Power Light Emitting Diode and Method with Current Density Operation
Application: 12/936,238 →
Techniques of Forming Ohmic Contacts on Gan Light Emitting Diodes
Application: 13/184,160 →
Gallium and Nitrogen Containing Triangular or Diamond-Shaped Configuration for Optical Devices
Application: 13/163,482 →
Singulation Method and Resulting Device of Thick Gallium and Nitrogen Containing Substrates
Application: 13/163,498 →
Illumination Source with Reduced Inner Core Size
Application: 13/025,833 →
Illumination Source with Direct Die Placement
Application: 13/025,791 →
Illumination Source and Manufacturing Methods
Application: 13/025,849 →
Modular Led Lamp and Manufacturing Methods
Application: 13/025,860 →
Gallium-Nitride-On-Handle Substrate Materials and Devices and Method of Manufacture
Application: 13/012,674 →
Optical Device with Wavelength Selective Reflector
Application: 12/914,789 →
Multi Color Active Regions for White Light Emitting Diode
Application: 12/880,803 →
System and Method for Led Packaging
Application: 12/879,784 →
Back-End Processes for Substrates Re-Use
Application: 12/858,379 →
GaN Containing Optical Devices and Method with ESD Stability
Application: 12/785,953 →
High Indium Containing Ingan Substrates for Long Wavelength Optical Devices
Application: 12/785,404 →
Polarized White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Transparent Phosphors
Application: 12/754,886 →
Method and Structure for Manufacture of Light Emitting Diode Devices Using Bulk Gan
Application: 12/749,476 →
Polarization Direction of Optical Devices Using Selected Spatial Configurations
Application: 12/720,593 →
Microcavity Light Emitting Diode Method of Manufacture
Application: 12/569,337 →
Photonic-Crystal Light Emitting Diode and Method of Manufacture
Application: 12/569,844 →
White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Phosphors
Application: 12/534,829 →
Method and Surface Morphology of Non-Polar Gallium Nitride Containing Substrates
Application: 12/497,289 →
Selective Area Epitaxy Growth Method and Structure for Multi-Colored Devices
Application: 12/484,924 →
Crystalline Composition, Wafer, and Semi-Conductor Structure
Application: 11/621,560 →
Crystalline Composition, Wafer, Device, and Associated Method
Application: 11/621,556 →
Gallium Nitride Crystals and Wafers and Method of Making
Application: 11/559,146 →
Method of making a gallium nitride crystalline composition having a low dislocation density
Application: 11/558,048 →
Gallium Nitride Crystal and Method of Making Same
Application: 11/588,181 →
Method for Reducing Defect Concentration in Crystals
Application: 11/300,660 →
Gallium Nitride Crystals and Wafers and Method of Making
Application: 11/010,507 →
Homoepitaxial Gallium Nitride Based Photodetector and Method of Producing
Application: 10/932,127 →
Homoepitaxial Gallium-Nitride-Based Light Emitting Device and Method for Producing
Application: 10/831,865 →
Light-Based System for Detecting Analytes
Application: 10/746,292 →
Group Iii-Nitride Based Resonant Cavity Light Emitting Devices Fabricated on Single Crystal Gallium Nitride Substrates
Application: 10/693,803 →
Homoepitaxial Gallium-Nitride-Based Light Emitting Device and Method for Producing
Application: 10/440,574 →
Gallium Nitride Crystal and Method of Making Same
Application: 10/329,981 →
Homoepitaxial Gallium Nitride Based Photodetector and Method of Producing
Application: 09/839,941 →