Gallium-nitride-on-handle substrate materials and devices and method of manufacture

1. A gallium and nitrogen containing device comprising:

a handle substrate member comprising a first surface region and a second surface region, wherein the second surface region is opposite the first surface region;

an adhesion layer overlying the second surface region;

a gallium and nitrogen containing material overlying the adhesion layer, wherein the gallium and nitrogen containing material comprises at least one a core region extending through a thickness of the gallium and nitrogen containing material;

an interface region overlying the gallium and nitrogen containing material;

at least one n-type epitaxial growth region overlying the interface region;

at least one core structure extending from the at least one core region and through a thickness of the at least one n-type epitaxial growth region;

an active region overlying the at least one n-type epitaxial growth region;

a p-type region overlying the active region; and

at least one p-contact region overlying the p-type region.

2. The device of claim 1 , wherein the interface region is characterized by a defect density of less than about 10 6 -10 7 cm −2 within a matrix of low-dislocation density regions adjacent to at least one core structure.

3. The device of claim 1 , wherein the gallium and nitrogen containing material comprises a dot core gallium and nitrogen containing substrate.

4. The device of claim 1 wherein the second surface region comprises a patterned, textured, or roughened surface structure.

5. The device of claim 1 , further comprising:

at least one mesa structure, wherein the mesa structure comprises the active region, the p-type region, and the at least one p-contact region;

an exposed n-type epitaxial growth region adjacent the at least one mesa structure; and

at least one n-contact region overlying the exposed n-type epitaxial growth region.

6. The device of claim 1 , wherein the gallium and nitrogen containing material comprises a dot core gallium and nitrogen containing substrate.

7. The device of claim 1 , wherein the first surface region comprises a patterned, textured, or roughened surface structure.

8. The device of claim 1 , wherein the handle substrate comprises a material selected from sapphire, aluminum oxide, mullite, silicon, silicon nitride, germanium, gallium arsenide, silicon carbide, MgAl 2 O 4 spinel, zinc oxide, indium tin oxide (ITO), indium oxide, tin oxide, indium phosphide, beryllium oxide, chemical-vapor-deposition (CVD) diamond, single crystal diamond, YAG: Ce, gallium nitride, indium nitride, gallium aluminum indium nitride, aluminum oxynitride, aluminum nitride, and a combination of any of the foregoing.

9. The device of claim 1 , further comprising a street between one or more adjacent p-contact regions, wherein the street provides an electrical insulation barrier between a p-contact region and at least one core region.

10. The device of claim 9 , wherein the at least one core region comprises a square array of core regions; and

the one or more p-contact regions are approximately square.

11. The device of claim 9 , wherein the at least one core region comprises a hexagonal array; and

the one or more adjacent p-contact regions are approximately triangular.

12. The device of claim 1 ,

wherein the handle substrate member is electrically conducting; and

further comprising at least one n-contact region overlying the first surface region.

13. The device of claim 12 , wherein the interface region comprises a defect density of less than about 10 6 cm −2 to 10 7 cm −2 within the matrix region between cores.

14. The device of claim 12 , wherein the second surface region comprises a patterned, textured, or roughened surface structure.

15. The device of claim 12 , further comprising a street between one or more adjacent p-contact regions, wherein the street provides an electrical insulation barrier between a p-contact region and at least one core region.

16. The device of claim 1 ,

wherein the handle substrate member is electrically insulating; and

further comprising:

at least one mesa structure, wherein the at least one mesa structure comprises the active region, the p-type region, and the at least one p-contact region;

an exposed n-type epitaxial growth region adjacent the at least one mesa structure; and

an n-contact region overlying the exposed n-type epitaxial growth region.

17. The device of claim 16 , wherein the interface region comprises a defect density of less than about 10 6 cm −2 to 10 7 cm −2 within the matrix region between cores.

18. The device of claim 16 , wherein the second surface region comprises a patterned, textured, or roughened surface structure.

19. The device of claim 16 , further comprising a street between one or more adjacent p-contact regions, wherein the street provides an electrical insulation barrier between a p-contact region and at least one core region.

20. The device of claim 1 ,

wherein the handle substrate member is electrically conducting; and

further comprising:

at least one n-contact region overlying the first surface region; and

a second handle substrate member overlying the p-type active region, wherein,

the second handle substrate member is transparent or reflective, the second handle substrate member is electrically conductive; and

the at least one p-contact region overlies the second handle substrate.

21. The device of claim 20 , wherein the second handle substrate member comprises a material selected from indium tin oxide, ZnO, SnO, and silver-coated silicon.

22. The device of claim 20 , wherein the interface region comprises a defect density of less than about 10 6 cm −2 to 10 7 cm −2 within the matrix region between cores.

23. The device of claim 20 , wherein the second surface region comprises a patterned, textured, or roughened surface structure.

24. The device of claim 20 , further comprising a street between one or more adjacent p-contact regions, wherein the street provides an electrical insulation barrier between a p-contact region and at least one core region.