Patent Assignment
Reel/Frame 033691/0582
Security Interest
Recorded: 2014-09-05
Received: 2014-09-05
Pages: 44
Assignor
SORAA, INC.
Executed: 2014-08-29
Assignees
SPECIAL VALUE CONTINUATION PARTNERS, LP
TWO EMBARCADERO CENTER, SUITE 1670, SAN FRANCISCO, CA, 94111, UNITED STATES
TENNENBAUM OPPORTUNITIES PARTNERS V, LP
TWO EMBARCADERO CENTER, SUITE 1670, SAN FRANCISCO, CA, 94111, UNITED STATES
TCPC SBIC, LP
TWO EMBARCADERO CENTER, SUITE 1670, SAN FRANCISCO, CA, 94111, UNITED STATES
Covered Properties
(100)
Surface Morphology of Non-Polar Gallium Nitride Containing Substrates
Application:
14/302,250 →
System and Method for Providing Color Light Sources in Proximity to Predetermined Wavelength Conversion Structures
Application:
14/256,670 →
Polarized White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Transparent Phosphors
Application:
14/191,950 →
System and Method for Led Packaging
Application:
14/171,885 →
Accessories for Led Lamp Systems
Application:
14/166,692 →
Dense-Luminescent-Materials-Coated Violet Leds
Application:
14/135,098 →
Illumination Source with Direct Die Placement
Application:
14/097,043 →
High Quality Group-Iii Metal Nitride Crystals, Methods of Making, and Methods of Use
Application:
14/089,281 →
Polarized White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Transparent Phosphors
Application:
14/086,792 →
High-Temperature Ultra-Low Ripple Multi-Stage Led Driver and Led Control Circuits
Application:
14/075,936 →
Indium Gallium Nitride Light Emitting Devices
Application:
14/054,234 →
Power Light Emitting Diode and Method with Uniform Current Density Operation
Application:
14/040,379 →
White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Phosphors
Application:
14/035,693 →
Accessories for Led Lamps
Application:
14/014,112 →
Illumination Source with Direct Die Placement
Application:
13/959,422 →
Power Light Emitting Diode and Method with Current Density Operation
Application:
13/931,359 →
Accessories for Led Lamps
Application:
13/909,752 →
Process for Large-Scale Ammonothermal Manufacturing of Semipolar Gallium Nitride Boules
Application:
13/908,836 →
Polycrystalline Group Iii Metal Nitride with Getter and Method of Making
Application:
13/894,220 →
Led Lamps with Improved Quality of Light
Application:
13/886,547 →
Compact Lens for High Intensity Light Source
Application:
13/865,760 →
Light Emitting Diodes with Low Refractive Index Material Layers to Reduce Light Guiding Effects
Application:
13/787,582 →
Large Area Nitride Crystal and Method for Making It
Application:
13/731,453 →
Polarized White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Transparent Phosphors
Application:
13/623,788 →
Surface Morphology of Non-Polar Gallium Nitride Containing Substrates
Application:
13/621,485 →
Optical Devices Having Reflection Mode Wavelength Material
Application:
13/600,988 →
Large Area, Low-Defect Gallium-Containing Nitride Crystals, Method of Making, and Method of Use
Application:
13/600,191 →
Polarization Direction of Optical Devices Using Selected Spatial Configurations
Application:
13/553,691 →
Method and Surface Morphology of Non-Polar Gallium Nitride Containing Substrates
Application:
13/548,635 →
Method and Surface Morphology of Non-Polar Gallium Nitride Containing Substrates
Application:
13/548,770 →
Large Area Nonpolar or Semipolar Gallium and Nitrogen Containing Substrate and Resulting Devices
Application:
13/548,931 →
Heatsink
Application:
29/423,725 →
System and Method for Led Packaging
Application:
13/482,956 →
Miscut Bulk Substrates
Application:
13/431,834 →
Nitride Crystal with Removable Surface Layer and Methods of Manufacture
Application:
13/425,304 →
Techniques of Forming Ohmic Contacts on Gan Light Emitting Diodes
Application:
13/419,325 →
White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Phosphors
Application:
13/360,535 →
Method and Resulting Device for Processing Phosphor Materials in Light Emitting Diode Applications
Application:
13/359,846 →
Gallium and Nitrogen Containing Triangular or Diamond-Shaped Configuration for Optical Devices
Application:
13/357,578 →
Method for Growth of Indium-Containing Nitride Films
Application:
13/346,507 →
High Pressure Apparatus and Method for Nitride Crystal Growth
Application:
13/343,563 →
System and Method for Providing Color Light Sources in Proximity to Predetermined Wavelength Conversion Structures
Application:
13/328,978 →
Method for Manufacture of Bright GaN LEDs Using a Selective Removal Process
Application:
13/304,182 →
Method and System for Dicing Substrates Containing Gallium and Nitrogen Material
Application:
13/298,617 →
High Temperature Led System Using an Ac Power Source
Application:
13/298,905 →
Gallium and Nitrogen Containing Trilateral Configuration for Optical Devices
Application:
13/281,221 →
Method of Making Bulk Ingan Substrates and Devices Thereon
Application:
13/272,981 →
High Intensity Light Source
Application:
13/269,193 →
Process and Apparatus for Large-Scale Manufacturing of Bulk Monocrystalline Gallium-Containing Nitride
Application:
13/226,249 →
System and Method for Selected Pump Leds with Multiple Phosphors
Application:
13/211,145 →
Heatsink for Led
Application:
29/399,524 →
Heatsink
Application:
29/399,523 →
Power Light Emitting Diode and Method with Current Density Operation
Application:
12/936,238 →
Techniques of Forming Ohmic Contacts on Gan Light Emitting Diodes
Application:
13/184,160 →
Ammonothermal Method for Growth of Bulk Gallium Nitride
Application:
13/175,739 →
Method for Synthesis of High Quality Large Area Bulk Gallium Based Crystals
Application:
12/988,772 →
Quantum dot wavelength conversion for hermetically sealed optical devices
Application:
13/135,087 →
Gallium and Nitrogen Containing Triangular or Diamond-Shaped Configuration for Optical Devices
Application:
13/163,482 →
Singulation Method and Resulting Device of Thick Gallium and Nitrogen Containing Substrates
Application:
13/163,498 →
Large Area Nitride Crystal and Method for Making It
Application:
13/160,307 →
Semi-insulating Group III Metal Nitride and Method of Manufacture
Application:
13/041,199 →
Highly Polarized White Light Source By Combining Blue LED on Semipolar or Nonpolar GaN with Yellow LED on Semipolar or Nonpolar GaN
Application:
12/995,946 →
Illumination Source and Manufacturing Methods
Application:
13/025,849 →
Illumination Source with Reduced Inner Core Size
Application:
13/025,833 →
Illumination Source with Direct Die Placement
Application:
13/025,791 →
Modular Led Lamp and Manufacturing Methods
Application:
13/025,860 →
White Light Apparatus and Method
Application:
13/019,897 →
Reflection Mode Package for Optical Devices Using Gallium and Nitrogen Containing Materials
Application:
13/019,521 →
Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials
Application:
13/014,622 →
High Pressure Apparatus and Method for Nitride Crystal Growth
Application:
13/013,697 →
Gallium-Nitride-On-Handle Substrate Materials and Devices and Method of Manufacture
Application:
13/012,674 →
Optical Device with Wavelength Selective Reflector
Application:
12/914,789 →
High Pressure Apparatus with Stackable Rings
Application:
12/891,668 →
Reflection Mode Wavelength Conversion Material for Optical Devices Using Non-Polar or Semipolar Gallium Containing Materials
Application:
12/887,207 →
Multi Color Active Regions for White Light Emitting Diode
Application:
12/880,803 →
System and Method for Led Packaging
Application:
12/879,784 →
Back-End Processes for Substrates Re-Use
Application:
12/858,379 →
High Indium Containing Ingan Substrates for Long Wavelength Optical Devices
Application:
12/785,404 →
Polarized White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Transparent Phosphors
Application:
12/754,886 →
Method and Structure for Manufacture of Light Emitting Diode Devices Using Bulk Gan
Application:
12/749,476 →
Polarization Direction of Optical Devices Using Selected Spatial Configurations
Application:
12/720,593 →
Plant and Method for Large-Scale Ammonothermal Manufacturing of Gallium Nitride Boules
Application:
12/697,171 →
Polycrystalline Group Iii Metal Nitride with Getter and Method of Making
Application:
12/634,665 →
Photonic-Crystal Light Emitting Diode and Method of Manufacture
Application:
12/569,844 →
Microcavity Light Emitting Diode Method of Manufacture
Application:
12/569,337 →
Textured-Surface Light Emitting Diode and Method of Manufacture
Application:
12/569,841 →
Large-Area Bulk Gallium Nitride Wafer and Method of Manufacture
Application:
12/556,562 →
Large-Area Seed for Ammonothermal Growth of Bulk Gallium Nitride and Method of Manufacture
Application:
12/556,558 →
Nitride Crystal with Removable Surface Layer and Methods of Manufacture
Application:
12/546,458 →
Process and Apparatus for Large-Scale Manufacturing of Bulk Monocrystalline Gallium-Containing Nitride
Application:
12/534,857 →
Process for Large-Scale Ammonothermal Manufacturing of Gallium Nitride Boules
Application:
12/534,844 →
Process and Apparatus for Growing a Crystalline Gallium-Containing Nitride Using an Azide Mineralizer
Application:
12/534,849 →
Apparatus and Method for Seed Crystal Utilization in Large-Scale Manufacturing of Gallium Nitride
Application:
12/534,843 →
White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Phosphors
Application:
12/534,829 →
High Quality Chlorine-Containing Large Area Bulk Non-Polar or Semipolar Gallium Based Substrates and Methods
Application:
12/497,969 →
Method and Surface Morphology of Non-Polar Gallium Nitride Containing Substrates
Application:
12/497,289 →
COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs
Application:
12/491,176 →
Selective Area Epitaxy Growth Method and Structure for Multi-Colored Devices
Application:
12/484,924 →
Heater Device and Method for High Pressure Processing of Crystalline Materials
Application:
12/484,095 →
Selective Area Epitaxy Growth Method and Structure
Application:
12/482,440 →