Reflection Mode Wavelength Conversion Material for Optical Devices Using Non-Polar or Semipolar Gallium Containing Materials

1 . An optical device comprising:

a substrate member having a surface region;

at least one LED configured overlying one or more portions of the surface region;

at least one exposed portion of the surface region;

a wavelength conversion material disposed overlying the at least one exposed portion; and

a wavelength selective surface configured to block substantially direct emission of the at least one LED and configured to transmit at least one selected wavelength of reflected emission caused by an interaction with the wavelength conversion material.

2 . The device of claim 1 wherein the wavelength selective surface comprises a transparent material.

3 . The device of claim 1 wherein the wavelength selective surface comprises an outer portion of a package housing the at least one LED.

4 . The device of claim 1 wherein the surface region is made of a metal material, a semiconductor material, a dielectric material, or combinations.

5 . The device of claim 1 wherein the at least one selected wavelength is provided by a filter.

6 . The device of claim 1 wherein the surface region is substantially planar.

7 . (canceled)

8 . The device of claim 1 wherein the wavelength conversion material comprises a phosphor.

9 . The device of claim 1 wherein the substrate member and wavelength selective surface are configured as a package.

10 - 15 . (canceled)

16 . An optical device comprising:

a substrate member comprising a surface region;

at least one LED configured overlying one or more first portions of the surface region, the at least one LED having LED surface regions;

at least one second portion of the surface region;

a wavelength conversion material disposed overlying the second portions and configured to expose the LED surface regions.

17 . The optical device of claim 16 wherein the wavelength conversion material has a density, a thickness, a surface region, the surface region is uneven with the LED surface regions.

18 . (canceled)

19 . The optical device of claim 16 wherein the LED surface regions is a substantial portion of an entirety of a total surface region of the surface region.

20 - 29 . (canceled)

30 . An optical device comprising:

a substrate member comprising a surface region;

at least one LED configured overlying at least one portion of the surface region, the at least one LED having LED surface regions and characterized by a first height from a reference region;

a wavelength conversion material configured to have an upper surface having a second height from the reference region; and

whereupon the second height is about less than the first height.

31 . The device of claim 30 wherein the wavelength conversion material comprises a thickness, the wavelength conversion material being with about three hundred microns of a thermal sink.

32 . The device of claim 31 wherein the thermal sink comprises a surface region.

33 - 37 . (canceled)

38 . The device of claim 30 wherein the wavelength conversion material is characterized by an average particle-to-particle distance of about less than about 3 times the average particle size of the wavelength conversion material.

39 . The device of claim 30 wherein the wavelength conversion material is characterized by an average particle-to-particle distance of about less than about 5 times the average particle size of the wavelength conversion material.

40 - 41 . (canceled)

42 . The device of claim 30 further comprising an optically transparent member.

43 - 45 . (canceled)

46 . The device of claim 30 wherein the wavelength conversion material comprises one or more entities comprising a phosphor or phosphor blend selected from one or more of (Y, Gd, Tb, Sc, Lu, La) 3 (Al, Ga, In) 5 O 12 :Ce 3+ , SrGa 2 S 4 :Eu 2+ , SrS:Eu 2+ , and colloidal quantum dot thin films comprising CdTe, ZnS, ZnSe, ZnTe, CdSe, or CdTe.

47 . The device of claim 30 wherein the wavelength conversion material further comprising a phosphor capable of emitting substantially red light, wherein the phosphor is selected from one or more of the group consisting of (Gd,Y,Lu,La) 2 O 3 :Eu 3+ , Bi 3+ ; (Gd,Y,Lu,La) 2 O 2 S:Eu 3+ , Bi 3+ ; (Gd,Y,Lu,La)VO 4 :Eu 3+ , Bi 3+ ; Y 2 (O,S) 3 : Eu 3+ ; Ca 1−x Mo 1−y Si y O 4 , where 0.05≦x≦0.5, 0≦y≦0.1; (Li,Na,K) 5 Eu(W,Mo)O 4 ; (Ca,Sr)S:Eu 2+ ; SrY 2 S 4 :Eu 2+ ; CaLa 2 S 4 :Ce 3+ ; (Ca,Sr)S:Eu 2+ ; 3.5MgO*0.5MgF 2 *GeO 2 :Mn 4+ (MFG); (Ba,Sr,Ca)Mg x P 2 O 7 :Eu 2+ , Mn 2+ ; (Y,Lu) 2 WO 6 :Eu 3+ , Mo 6+ ; (Ba,Sr,Ca) 3 Mg x Si 2 O 8 :Eu 2+ , Mn 2+ , wherein 0.1<x≦2; (RE 1−y Ce y )Mg 2−x Li x Si 3−x PxO 12 , where RE is at least one of Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu, La) 2−x Eu x W 1−y Mo y O 6 ,where 0.5≦x.≦1.0, 0.01≦y≦1.0; (SrCa) 1−x Eu x Si 5 N 8 , where 0.01≦x≦0.3; SrZnO 2 :Sm +3 ; M m O n X, wherein M is selected from the group of Sc, Y, a lanthanide, an alkali earth metal and mixtures thereof; X is a halogen; 1≦m≦3; and 1≦n≦4, and wherein the lanthanide doping level can range from 0.1 to 40% spectral weight; and Eu 3+ activated phosphate or borate phosphors; and mixtures thereof.

48 - 52 . (canceled)