Highly Polarized White Light Source By Combining Blue LED on Semipolar or Nonpolar GaN with Yellow LED on Semipolar or Nonpolar GaN
A packaged light emitting device. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region. Each of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The two or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission.
1 . A packaged light emitting device comprising:
a substrate member comprising a surface region;
two or more light emitting diode devices overlying the surface region, each of the light emitting diode device being fabricated on a semipolar or nonpolar GaN containing substrate, the two or more light emitting diode devices fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission.
2 . The device of claim 1 wherein the two or more light emitting diode device comprising a blue LED device and a yellow LED device, the substantially polarized emission being white light.
3 . The device of claim 1 wherein the two or more light emitting diode device comprises an array of LED devices comprising a pair of blue LED devices and a pair of yellow LED devices.
4 . The device of claim 1 wherein the two or more light emitting diode devices comprises at least a red LED device, a blue LED device, and a green LED device.
5 . A monolithic light emitting device comprising:
a bulk GaN containing semipolar or nonpolar substrate comprising a surface region;
an n-type GaN containing layer overlying the surface region, the n-type GaN containing layer having a first region and a second region;
a first LED device provided on the first region, the first LED device having a first color characteristic; and
a second LED device provided on the second region, the second LED device having a second color characteristic.
6 . The device of claim 5 wherein the first color characteristic is yellow and the second color characteristic is blue.
7 . The device of claim 6 further comprising a third LED device provided on a third region, the third LED device having a third color characteristic, the third color characteristic being red or green.
8 . A monolithic light emitting device comprising:
a bulk GaN containing semipolar or nonpolar substrate comprising a surface region;
an n-type GaN containing layer overlying the surface region, the n-type GaN containing layer having a first region and a second region;
a first LED device provided on the first region, the first LED device having a first color characteristic;
a second LED device provided on the second region, the second LED device having a second color characteristic; and
a third LED device provided on the third region, the third LED device having a third color characteristic.
9 . The device of claim 8 wherein the first characteristic is blue, the second characteristic is green, and the third characteristic is red.
10 . A light emitting device comprising:
a bulk GaN containing semipolar or nonpolar substrate, the bulk GaN containing semipolar or nonpolar substrate comprising a surface region and a bottom region;
an n-type GaN containing material overlying the surface region;
a blue LED device overlying the surface region;
a yellow LED device overlying the blue LED device to form a stacked structure.
11 . The device of claim 10 further comprising a red LED device overlying the blue LED device.
12 . The device of claim 10 wherein the blue LED device and the yellow LED device are configured to emit substantially polarized emission.
13 . A light emitting device comprising:
a bulk GaN containing semipolar or nonpolar substrate, the bulk GaN containing semipolar or nonpolar substrate comprising a surface region and a bottom region;
an n-type GaN containing material overlying the surface region;
a blue LED device overlying the surface region;
a green LED device overlying the blue LED device;
a red LED device overlying the green LED device to form a stacked structure.
14 . A light emitting device comprising:
a bulk GaN semipolar or nonpolar substrate comprising a surface region;
an N-type GaN containing layer overlying the surface region;
an InGaN active region overlying the surface region;
a blue emitting region within a first portion of the InGaN active region;
a yellow emitting region within a second portion of the InGaN active region;
a p-type GaN containing layer overlying the InGaN active region.
15 . A light emitting device comprising:
a bulk GaN semipolar or nonpolar substrate comprising a surface region;
an N-type GaN containing layer overlying the surface region;
an InGaN active region overlying the surface region;
a blue emitting region within a first portion of the InGaN active region;
a green emitting region within a second portion of the InGaN active region;
a red emitting region within a third portion of the InGaN active region; and
a p-type GaN containing layer overlying the InGaN active region.