Gallium nitride crystals and wafers and method of making
View Patent ↗A GaN crystal having up to about 5 mole percent of at least one of aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having a diameter greater than 2 mm, a dislocation density less than about 10 4 cm −2 , and is substantially free of tilt boundaries.
1. A GaN crystal comprising up to about 5 mole percent of at least one of aluminum, indium, and combinations thereof, wherein the GaN crystal comprises at least one grain, wherein the at least one grain has a diameter greater than 2 mm, a dislocation density of less than about 10 4 cm −2 , and is substantially free of tilt boundaries.
2. The GaN crystal of claim 1 , wherein the GaN crystal is grown from one of a single seed and a nucleus.
3. The GaN crystal of claim 1 , wherein the GaN crystal is grown on a patterned GaN substrate.
4. The GaN crystal of claim 3 , wherein the patterned GaN substrate comprises at least one cutout having a predetermined dimension, and wherein the GaN crystal is grown laterally from a boundary of the at least one cutout.
5. The GaN crystal of claim 4 , wherein at least about 50% of the area of a major face of the GaN crystal has a dislocation density of less than about 10 4 cm −2 .
6. The GaN crystal of claim 1 , wherein the GaN crystal is optically transparent, having an optical absorption coefficient below 100 cm −1 at wavelengths between 465 nm and 700 nm.
7. The GaN crystal of claim 6 , wherein the optical absorption coefficient is below 5 cm −1 at wavelengths between 465 nm and 700 nm.
8. The GaN crystal of claim 1 , wherein the GaN crystal has an oxygen concentration of less than about 3×10 18 cm −3 .
9. The GaN crystal of claim 1 , wherein the x-ray rocking curve full width at half maximum of the (0002) reflection in the w direction of the at least one grain is below about 50 arc-sec.
10. The GaN crystal of claim 1 , wherein the GaN crystal is one of an n-type semiconductor, a p-type semiconductor, and a semi-insulator.
11. The GaN crystal of claim 10 , wherein the GaN crystal is magnetic.
12. The GaN crystal of claim 10 , wherein the GaN crystal is luminescent.
13. The GaN crystal of claim 1 , wherein the single crystal has a photoluminescence spectrum peaking at a photon energy of between about 3.38 eV and about 3.41 eV at a crystal temperature of about 300 K.
14. The GaN crystal of claim 1 , wherein the GaN crystal is a wafer.
15. The GaN crystal of claim 14 , wherein the GaN crystal has a rounded edge having a rounded portion.
16. The GaN crystal of claim 14 , wherein the wafer has a crystallographic orientation that is within about 10° of one of an (0001) orientation, an (000{overscore (1)}) orientation, an (10{overscore (1)}0) orientation, an (11{overscore (2)}0) orientation, and an (10{overscore (1)}1) orientation.
17. The GaN crystal of claim 16 , wherein the crystallographic orientation is within about 5° of one of the (0001) orientation, the (000{overscore (1)}) orientation, the (10{overscore (1)}0) orientation, the (11{overscore (2)}0) orientation, and the (10{overscore (1)}1) orientation.
18. The GaN crystal of claim 17 , wherein the crystallographic orientation is one of the (0001) orientation, the (100{overscore (1)}) orientation, the (10{overscore (1)}0) orientation, the (11{overscore (2)}0) orientation, and the (10{overscore (1)}1) orientation.
19. The GaN crystal of claim 14 , wherein the GaN crystal has at least one chamfer on an edge of the GaN crystal.
20. The GaN crystal of claim 19 , wherein the at least one chamfer has a depth that is between about 10 μm and 20% of a thickness dimension of the wafer and a width that is between about one and about five times the depth.
21. The GaN crystal of claim 1 , wherein the GaN crystal is a one of a boule or an ingot.
22. The GaN crystal of claim 1 , wherein the dislocation density is less than about 10 3 cm −2 .
23. The GaN crystal of claim 22 , wherein the dislocation density is less than about 100 cm −2 .
24. The GaN crystal of claim 1 , further comprising at least one dopant, wherein the at least one dopant is one of Be, C, O, Mg, Si, H, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, Zr, Hf, a rare earth metal, and combinations thereof.
25. The GaN crystal of claim 24 , wherein the at least one dopant is present in a concentration in a range from about 10 16 cm-3 to about 10 21 cm −3 .
26. The GaN crystal of claim 1 , wherein the GaN crystal is a single crystal.
27. The GaN crystal of claim 1 , wherein the GaN crystal is a black GaN crystal.
28. The GaN crystal of claim 27 , wherein a ratio of intensity of near-band-edge photoluminescence from the black GaN crystal to that of a GaN crystal that is substantially transparent and substantially undoped is less than about 0.1%.
29. The GaN crystal of claim 1 , wherein the GaN crystal comprises at least 0.04 ppm fluorine.
30. The GaN crystal of claim 1 , wherein the at least one grain has a diameter in a range from about 5 mm to about 600 mm.
31. A semiconductor structure, the semiconductor structure comprising: a substrate, wherein the substrate comprises a GaN crystal comprising up to about 5 mole % of at least one of aluminum, indium, and combinations thereof, wherein the GaN crystal comprises at least one grain, wherein the at least one grain has a diameter of at least about 2 mm, a dislocation density of less than about 10 4 cm −2 , and is substantially free of tilt boundaries.
32. The semiconductor structure of claim 31 , further comprising at least one homoepitaxial layer disposed on the GaN crystal, the at least one layer comprising Al x In y Ga 1-x-y N layer, where 0≦x≦1, 0≦y≦1 and 0≦x+y ≦1, wherein the at least one homoepitaxial layer comprises at least one grain, wherein the at least one grain has a diameter of at least about 2 mm and a dislocation density of less than about 10 4 cm −2 , and is substantially free of tilt boundaries.
33. The semiconductor structure of claim 31 , wherein the GaN crystal is a wafer.
34. The semiconductor structure of claim 31 , wherein the GaN crystal is one of a boule or an ingot.
35. The semiconductor structure of claim 31 , wherein the semiconductor structure forms a portion of one of a light emitting diode, a laser diode, a photodetector, an avalanche photodiode, a transistor, a rectifier, and a thyristor; one of a transistor, a rectifier, a Schottky rectifier, a thyristor, a p-i-n diode, a metal-semiconductor-metal diode, high-electron mobility transistor, a metal semiconductor field effect transistor, a metal oxide field effect transistor, a power metal oxide semiconductor field effect transistor, a power metal insulator semiconductor field effect transistor, a bipolar junction transistor, a metal insulator field effect transistor, a heterojunction bipolar transistor, a power insulated gate bipolar transistor, a power vertical junction field effect transistor, a cascade switch, an inner sub-band emitter, a quantum well infrared photodetector, a quantum dot infrared photodetector, and combinations thereof.
36. A GaN crystal comprising up to about 5 mole % of at least one of aluminum, indium, and combinations thereof, wherein the GaN crystal has an infrared absorption peak at about 3175 cm −1 , with an absorbance per unit thickness of greater than about 0.01 cm −1 .
37. The GaN crystal of claim 36 , wherein the GaN single crystal has a fluorine concentration of greater than about 0.04 ppm.
38. The GaN crystal of claim 36 , wherein the GaN crystal forms a portion of a substrate of a semiconductor device, the semiconductor device comprising the substrate.
39. The GaN crystal of claim 38 , further comprising at least one active layer homoepitaxially disposed on the GaN single crystal, the at least one active layer comprising Al x In y Ga 1-x-y N layer, where 0≦x≦1, 0≦y≦1and 0≦x≦+y≦1.
40. The GaN crystal of claim 39 , wherein each of the at least one active layer and the GaN crystal is substantially free of tilt boundaries and has a dislocation density of less than 100 cm −2 .