Patent Assignment
Reel/Frame 039263/0803
Release of Security Interest
Recorded: 2016-07-26
Received: 2016-07-26
Pages: 14
Assignor
BOKF, NA
Executed: 2016-07-11
Assignee
MOMENTIVE PERFORMANCE MATERIALS INC.
260 HUDSON RIVER ROAD, WATERFORD, NY, 12188, UNITED STATES
Covered Properties
(39)
Crystalline Gallium Nitride Containing Flourine
Application:
15/061,069 →
Apparatus for Processing Materials at High Temperatures and Pressures
Application:
13/812,757 →
Apparatus for Processing Materials at High Temperatures and Pressures
Application:
61/368,443 →
Method for Forming Nitride Crystals
Application:
11/973,182 →
Crystalline Composition, Wafer, and Semi-Conductor Structure
Application:
11/621,560 →
Crystalline Composition, Wafer, Device, and Associated Method
Application:
11/621,556 →
Gallium Nitride Crystals and Wafers and Method of Making
Application:
11/559,146 →
Method of making a gallium nitride crystalline composition having a low dislocation density
Application:
11/558,048 →
Gallium Nitride Crystal and Method of Making Same
Application:
11/588,181 →
Method for Forming Nitride Crystals
Application:
60/828,646 →
Heater, Apparatus, and Associated Method
Application:
11/521,034 →
Crystalline composition, wafer, and semi-conductor structure
Application:
11/376,640 →
Crystalline composition, wafer, and semi-conductor structure
Application:
11/376,575 →
Method for Making Crystalline Composition
Application:
11/313,528 →
Apparatus for Making Crystalline Composition
Application:
11/313,442 →
Crystalline Composition, Device, and Associated Method
Application:
11/313,451 →
Method for Reducing Defect Concentration in Crystals
Application:
11/300,660 →
Resonant Cavity Light Emitting Devices and Associated Method
Application:
11/295,627 →
Single crystal and quasi-single crystal, composition, apparatus, and associated method
Application:
11/249,872 →
Apparatus for Producing Single Crystal and Quasi-Single Crystal, and Associated Method
Application:
11/249,896 →
Etchant, Method of Etching, Laminate Formed Thereby, and Device
Application:
11/167,719 →
Apparatus for Processing Materials in Supercritical Fluids and Methods Thereof
Application:
11/042,858 →
Gallium Nitride Crystals and Wafers and Method of Making
Application:
11/010,507 →
High Temperature High Pressure Capsule for Processing Materials in Supercritical Fluids
Application:
11/010,139 →
Homoepitaxial Gallium Nitride Based Photodetector and Method of Producing
Application:
10/932,127 →
Homoepitaxial Gallium-Nitride-Based Light Emitting Device and Method for Producing
Application:
10/831,865 →
Light-Based System for Detecting Analytes
Application:
10/746,292 →
High Pressure/High Temperature Apparatus with Improved Temperature Control for Crystal Growth
Application:
10/699,504 →
Group Iii-Nitride Based Resonant Cavity Light Emitting Devices Fabricated on Single Crystal Gallium Nitride Substrates
Application:
10/693,803 →
Homoepitaxial Gallium-Nitride-Based Light Emitting Device and Method for Producing
Application:
10/440,574 →
Gallium Nitride Crystal and Method of Making Same
Application:
10/329,981 →
Homoepitaxial Gallium-Nitride-Based Electronic Devices and Method for Producing Same
Application:
10/329,982 →
High pressure/high temperature apparatus with improved temperature control for crystal growth
Application:
60/435,189 →
Method for reducing defect concentrations in crystals
Application:
60/392,741 →
High Pressure High Temperature Growth of Crystalline Group Iii Metal Nitrides
Application:
10/063,164 →
Pressure vessel
Application:
09/683,658 →
High Temperature High Pressure Capsule for Processing Materials in Supercritical Fluids
Application:
09/683,659 →
Sintered Polycrystalline Gallium Nitride and Its Production
Application:
10/001,575 →
Homoepitaxial Gallium Nitride Based Photodetector and Method of Producing
Application:
09/839,941 →