Crystalline composition, wafer, and semi-conductor structure
A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm −1 , with an absorbance per unit thickness of greater than about 0.01 cm −1 .
1 . A crystalline composition, comprising gallium and nitrogen; and the crystalline composition having an infrared absorption peak at about 3175 cm −1 , with an absorbance per unit thickness of greater than about 0.01 cm −1 .
2 . The crystalline composition as defined in claim 1 , further comprising:
at least one of aluminum, arsenic, boron, indium, or phosphorus that is individually present in an amount in a range of up to about 5 mole %; or
a halide present in an amount in a range of greater than about 0.04 ppm; or
at least one of aluminum, arsenic, boron, indium, or phosphorus, which are individually present in an amount in a range of up to about 5 mole %, and the halide is present in an amount in a range of greater than about 0.04 ppm; or
the crystalline composition is free of magnesium.
3 . The crystalline composition as defined in claim 1 , wherein the crystalline composition has an oxygen concentration of less than about 3×10 18 per cubic centimeter, and
has a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter, and
has at least one grain, wherein the grain has a diameter greater than 2.75 millimeters, and is free of two-dimensional planar boundary defects.
4 . The crystalline composition as defined in claim 3 , wherein the crystalline composition has an oxygen concentration of less than about 5×10 17 per cubic centimeter.
5 . The crystalline composition as defined in claim 3 , wherein:
the dislocation density less than 1000 per square centimeter,
the grain is entirely free of all tilt boundaries, or
the grain has a diameter that is greater than about 5 millimeters.
6 . The crystalline composition as defined in claim 5 , wherein the dislocation density is less than 100 per square centimeter.
7 . The crystalline composition as defined in claim 1 , wherein the crystalline composition is semi-insulating or p-type and is optically opaque.
8 . The crystalline composition as defined in claim 1 , wherein the x-ray rocking curve full width at half maximum of the (0002) reflection in the o) direction of the grain is 30 arc-sec or less.
9 . The crystalline composition as defined in claim 1 , wherein the crystalline composition is a p-type semiconductor at about room temperature.
10 . The crystalline composition as defined in claim 9 , wherein the crystalline composition is a p-type semiconductor at a temperature in a range of less than about 250 Kelvin.
11 . The crystalline composition as defined in claim 1 , wherein the crystalline composition is an n-type semiconductor at about room temperature.
12 . The crystalline composition as defined in claim 1 , wherein the crystalline composition is semi-insulating at about room temperature, with a resistivity greater than about 100,000 ohm-centimeter.
13 . The crystalline composition as defined in claim 1 , wherein the crystalline composition is optically transparent, having an optical absorption coefficient below 100 cm −1 at wavelengths between 465 nm and 700 nm.
14 . The crystalline composition as defined in claim 1 , wherein the crystalline composition is magnetic, is luminescent, or is both magnetic and luminescent.
15 . The crystalline composition as defined in claim 1 , wherein the crystalline composition comprises a detectable amount, but less than about 5 mole percent, of each of aluminum, arsenic, boron, indium, or phosphorus; or less than about 5 mole percent of a combination of two or more thereof.
16 . The crystalline composition as defined in claim 1 , wherein the crystalline composition has a photoluminescence spectrum peaking at a photon energy of in a range of from about 3.38 eV to about 3.41 eV at a crystalline composition temperature of about 300 K.
17 . The crystalline composition as defined in claim 1 , wherein the crystalline composition has a thickness measured about perpendicular to the diameter that is in a range of greater than about 100 micrometers.
18 . The crystalline composition as defined in claim 1 , further comprising a dopant comprising one or more of Be, C, Si, H, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, Zr, Hf, or a rare earth metal.
19 . The crystalline composition as defined in claim 18 , wherein the dopant is present in a concentration in a range of from about 1×10 16 per cubic centimeter to about 1×10 21 per cubic centimeter.
20 . The crystalline composition as defined in claim 1 , wherein the crystalline composition defines a gallium nitride crystal lattice, and comprises one or more passivated gallium vacancies in the gallium nitride crystal lattice.
21 . The crystalline composition as defined in claim 1 , wherein the crystalline composition is black, and a ratio of intensity of near-band-edge photoluminescence from the black crystalline composition to that of a crystalline composition that is both transparent and undoped is less than about 0.1 percent.
22 . A wafer comprising the crystalline composition as defined in claim 1 .
23 . The wafer as defined in claim 22 , wherein the wafer has a crystallographic orientation that is within about 100 of one of an (0001) orientation, an (000{overscore (1)}) orientation, an (10{overscore (1)}0) orientation, an (11{overscore (2)}0) orientation, or an (10{overscore (1)}1) orientation.
24 . The wafer as defined in claim 22 , wherein the wafer has a surface with a surface roughness that is less than 1 nanometer RMS over a lateral area of at least 10×10 micrometers squared.
25 . A semiconductor structure, comprising the wafer as defined in claim 22 .
26 . The semiconductor structure as defined in claim 25 , further comprising a homoepitaxial layer disposed on the crystalline composition, the homoepitaxial layer comprising a Al x In y Ga 1-x-y N layer, where 0≦x≦1, 0≦y≦1 and 0≦x+y≦1.
27 . The semiconductor structure as defined in claim 25 , wherein the semiconductor structure forms a portion of one or more of a diode, detector, transducer, transistor, rectifier, thyristor, emitter, or switch.
28 . The semiconductor structure as defined in claim 25 , wherein the semiconductor structure forms a portion of a field effect transistor.
29 . The semiconductor structure as defined in claim 25 , wherein the semiconductor structure forms a portion of a light emitting diode, a laser diode, a photodetector, an avalanche photodiode, a p-i-n diode, a metal-semiconductor-metal diode, a Schottky rectifier, a high-electron mobility transistor, a metal semiconductor field effect transistor, a metal oxide field effect transistor, a power metal oxide semiconductor field effect transistor, a power metal insulator semiconductor field effect transistor, a bipolar junction transistor, a metal insulator field effect transistor, a heterojunction bipolar transistor, a power insulated gate bipolar transistor, a power vertical junction field effect transistor, a cascode switch, an inner sub-band emitter, a quantum well infrared photodetector, or a quantum dot infrared photodetector.
30 . A gallium nitride crystalline composition, having a crystal lattice having at least one gallium vacancy, and a nitrogen adjacent to the vacancy being passivated with hydrogen, wherein the crystalline composition is free of magnesium, is optically transparent, and is an n-type semiconductor at about room temperature, and the crystalline composition optionally further comprises:
one or more of aluminum, arsenic, boron, indium, or phosphorus individually present in an amount in a range of up to about 5 mole %;
a halide present in an amount in a range of greater than about 0.04 ppm; or
both the one or more of aluminum, arsenic, boron, indium, or phosphorus individually present in an amount in a range of up to about 5 mole %, and the halide being present in an amount in a range of greater than about 0.04 ppm; and
the crystalline composition having an oxygen concentration of less than about 3×10 18 per cubic centimeter, and having at least a portion of one face having a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter, and having at least one grain, wherein the grain has a diameter greater than 3 millimeters, and is free of two-dimensional planar boundary defects.
31 . A crystalline composition comprising gallium and nitrogen, wherein the crystalline composition is a boule or an ingot, and has an infrared absorption peak at about 3175 cm −1 , with an absorbance per unit thickness of greater than about 0.01 per centimeter.