Gallium—nitride-on-handle substrate materials and devices and method of manufacture
View Patent ↗A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.
1. A gallium and nitrogen containing device comprising:
a gallium and nitrogen containing material, wherein,
the gallium and nitrogen containing material comprises a first surface region, a second surface region, and at least one core region;
the first surface region is opposite the second surface region; and
the at least one core region extends between the first surface region and the second surface region and through the gallium and nitrogen containing material;
an interface region overlying the second surface region;
at least one n-type epitaxial growth region overlying the interface region;
a core structure extending from the at least one core region through the at least one n-type epitaxial growth region;
an active region overlying the at least one n-type epitaxial growth region;
a p-type region overlying the active region;
a first handle substrate overlying the p-type region, wherein the first handle substrate is transparent, substantially transparent, or reflective; and
at least one p-contact region overlying the first handle substrate.
2. The device of claim 1 , wherein the interface region is characterized by a defect density of less than about 10 6 cm −2 to 10 7 cm −2 within a matrix region between adjacent core regions.
3. The device of claim 1 , wherein the gallium and nitrogen containing material is provided from a dot core substrate.
4. The device of claim 1 , wherein the first surface region comprises a patterned, textured, or roughened surface structure.
5. The device of claim 1 , wherein,
the at least one core region comprises a plurality of core regions; and
the plurality of core regions form a square array and a die is approximately square.
6. The device of claim 1 , wherein,
the at least one core region comprises a plurality of core regions; and
the plurality of core regions form a hexagonal array and a die is approximately triangular.
7. The device of claim 1 , further comprising:
an adhesion layer overlying the first surface region;
a second handle substrate comprising a first surface region and a second surface region, wherein,
the first surface region of the second handle substrate is opposite the second surface region of the second handle substrate; and
the second surface region of the second handle substrate overlies the adhesion layer; and
at least one n-contact region overlying the first surface region of the second handle substrate.
8. The device of claim 1 , further comprising at least one n-contact region overlying the first surface region.
9. The device of claim 1 , wherein the first handle substrate comprises at least one through via or partial via.
10. The device of claim 1 , wherein the first handle substrate is transparent or substantially transparent and comprises a down-converting light-emitting material.
11. A gallium and nitrogen containing device comprising:
a gallium and nitrogen containing material, wherein,
the gallium and nitrogen containing material comprises a first surface region, a second surface region, and at least one core region;
the first surface region is opposite the second surface region; and
the at least one core region extends between the first surface region and the second surface region and through the gallium and nitrogen containing material;
an interface region overlying the second surface region;
at least one n-type epitaxial growth region overlying the interface region;
a core structure extending from the at least one core region through the at least one n-type epitaxial growth region;
an active region overlying the at least one n-type epitaxial growth region;
a p-type region overlying the active region;
one or more via or street structures providing an electrical barrier between adjacent core regions and a matrix region between the adjacent core regions;
at least one electrical contact region overlying a core region surrounded by a via or street structure; and
at least one handle substrate.
12. The device of claim 11 , wherein the interface region is characterized by a defect density of less than about 10 6 cm −2 to 10 7 cm −2 within the matrix region.
13. The device of claim 11 , wherein the gallium and nitrogen containing material is provided from a dot core substrate.
14. The device of claim 11 , wherein the first surface region comprises a patterned, textured, or roughened surface structure.
15. The device of claim 11 , wherein,
the at least one core region comprises a plurality of core regions; and
the plurality of core regions form a square array and a die is approximately square.
16. The device of claim 11 , wherein,
the at least one core region comprises a plurality of core regions; and
the plurality of core regions form a hexagonal array and a die is approximately triangular.
17. The device of claim 11 , further comprising:
an adhesion layer overlying the first surface region; and
at least one p-contact region overlying the p-type region, wherein,
the at least one handle substrate comprises a first surface region and a second surface region;
the first surface region is opposite the second surface region;
the second surface region overlies the adhesion layer; and
the at least one electrical contact region comprises an n-type contact region.
18. The device of claim 11 , further comprising:
at least one n-contact region overlying the first surface region; and
at least one p-contact region overlying the at least one core region; and
wherein the at least one handle substrate comprises a first transparent or reflective handle substrate overlying the at least one p-type region.
19. The device of claim 11 , wherein the at least one handle substrate comprises at least one through via or partial via.
20. The device of claim 11 , wherein,
the at least one handle substrate is transparent or substantially transparent; and
the at least one handle substrate comprises a down-converting light-emitting material.