Probe pad on a corner stress relief region in a semiconductor chip

1. A semiconductor chip, comprising:

a circuit region and a corner stress relief (CSR) region, the CSR region being a corner of the semiconductor chip comprising a triangle defined by a seal ring structure on a first side, the seal ring structure on a second side, and an enhanced structure on a third side;

a device under test (DUT) structure or a functional circuit disposed on the circuit region;

a probe pad disposed on the CSR region; and

a metal line traversing the enhanced structure and extending from the circuit region to the CSR region to electrically connect the probe pad to the DUT structure or the functional circuit.

2. The semiconductor chip of claim 1 , wherein the probe pad occupies a substantially rectangular area having edges, each long edge having a length D 1 and each short edge having a length D 2 , respectively, wherein the lengths D 1 and D 2 are within a range from about 10 μm to about 20 μm.

3. A semiconductor chip, comprising:

a circuit region and a corner stress relief (CSR) region, the CSR region being a corner of the semiconductor chip;

an enhanced structure disposed between the circuit region and the CSR region and extending between a first side of the semiconductor ship and a second side of the semiconductor chip along a border of the CSR region;

at least two probe pads disposed on the CSR region; and

a metal line extending from the circuit region, traversing the enhanced structure, and connecting to one of the at least two probe pads in the CSR region.

4. The semiconductor chip of claim 3 , wherein the enhanced structure comprises a plurality of stacked metallization layers and via layers, the metal line being in one of the metallization layers and electrically isolated from the enhanced structure.

5. The semiconductor chip of claim 3 , wherein the metal line passes over the enhanced structure.

6. The semiconductor chip of claim 3 , wherein the metal line passes under the enhanced structure.

7. The semiconductor chip of claim 3 , wherein the metal line is in a same layer as the at least one probe pad.

8. The semiconductor chip of claim 3 , wherein the CSR region comprises a plurality of stacked metallization layers and via layers, the at least two probe pads and the metal line being in the topmost metallization layer.

9. The semiconductor chip of claim 3 , wherein each of the at least two probe pads occupies a substantially rectangular area having edges, each long edge having a length D 1 and each short edge having a length D 2 , respectively, the lengths D 1 and D 2 are within a range from about 10 μm to about 20 μm.

10. The semiconductor chip of claim 9 , wherein the CSR region occupies a substantially right triangular area having perpendicular edges, the perpendicular edges having lengths of L 1 and L 2 , respectively, and the lengths D 1 and D 2 are within a ratio form about 20% to about 50% of the lengths Ll and L 2 .

11. The semiconductor chip of claim 3 , further comprising a plurality of stacked metallization layers and via layers underlying one of the at least two probe pads, and the metal line is in one of the metallization layers.

12. The semiconductor chip of claim 3 , further comprising a device under test (DUT) structure or a functional circuit disposed on the circuit region electrically connected to one of the at least two probe pads through the metal line.

13. The semiconductor chip of claim 3 , further comprising a seal ring region surrounding the circuit region and the CSR region, the seal ring region comprising a second set of probe pads disposed on the seal ring region.

14. A semiconductor chip, comprising:

a circuit region, a corner stress relief (CSR) region and a seal ring region, the seal ring region surrounding the circuit region and the CSR region;

a seal ring structure disposed on the seal ring region, the seal ring structure having a first side bordering a first side of the semiconductor chip and a second side bordering a second side of the semiconductor chip;

an enhanced structure disposed between the circuit region and the CSR region, the enhanced structure having a first end connected to the first side of the seal ring and a second end connected to the second side of the seal ring, the enhanced structure comprising a plurality of stacked metallization layers and via layers;

a probe pad disposed on the CSR region; and

a metal line extending from the circuit region, traversing the enhanced structure, and connecting to the probe pad in the CSR region, wherein the metal line is in a same layer of one of the metallization layers.

15. The semiconductor chip of claim 14 , wherein the metal line is in a same layer as the probe pad.

16. The semiconductor chip of claim 14 , further comprising a device under test (DUT) structure or a functional circuit disposed on the circuit region electrically connecting to the probe pad through the metal line.

17. The semiconductor chip of claim 14 , wherein the probe pad occupies a substantially rectangular area having edges, each long edge having a length D 1 and each short edge having a length D 2 , respectively, wherein the lengths D 1 and D 2 are within a range from about 10 μm to about 20 μm.

18. The semiconductor chip of claim 17 , wherein the CSR region occupies a substantially right triangular area having perpendicular edges, the perpendicular edges having lengths of L 1 and L 2 , respectively, and the lengths D 1 and D 2 are within a ratio form about 20% to about 50% of the lengths L 1 and L 2 .

19. The semiconductor chip of claim 14 , wherein the CSR region comprises a plurality of stacked metallization layers and via layers, the probe pad and the metal line being in the topmost metallization layer.

20. The semiconductor chip of claim 14 , wherein at least two probe pads are disposed on the CSR region.