IP Library Granted Patent US 8,687,766
Granted Patent B2
US 8,687,766 · App. 13/180,568 · Granted Apr 1, 2014

Enhancing accuracy of fast high-resolution X-ray diffractometry

Inventors: Matthew Wormington (Littleton, CO); Alexander Krohmal (Haifa, IL); David Berman (Tivon, IL); Gennady Openganden (Kiryat Yam, IL)
Assignee: Jordan Valley Semiconductors Ltd.
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Quick Facts
Patent No.
US 8,687,766
App. No.
13/180,568
Granted
Apr 1, 2014
Kind
B2
Abstract

A method for analysis includes directing a converging beam of X-rays toward a surface of a sample and sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum of the sample. The diffraction spectrum is corrected to compensate for a non-uniform property of the converging beam.

Claims (31)

1. A method for analysis, comprising:

directing a converging beam of X-rays toward a surface of a sample;

sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum of the sample;

calibrating a relation between an angle of the diffracted X-rays and an angular step size in the diffraction spectrum; and

applying the calibrated relation to correct the angular scale of the diffraction spectrum in order to compensate for a non-uniform property of the converging beam.

2. The method according to claim 1 , wherein correcting the diffraction spectrum comprises modifying intensities in the diffraction spectrum.

3. The method according to claim 2 , wherein modifying the intensities comprises applying an intensity correction as a function of the angle of the sensed X-rays in order to compensate for a non-uniform intensity of the converging beam.

4. The method according to claim 1 , and comprising analyzing the diffraction spectrum so as to identify a characteristic of the sample.

5. The method according to claim 4 , wherein the sample includes an epitaxial layer that is formed over a substrate, and wherein the diffraction spectrum comprises at least a first diffraction peak due to the substrate and a second diffraction peak due to the epitaxial layer, and wherein analyzing the diffraction spectrum comprises applying the corrected diffraction spectrum in finding an angular distance between the first and second diffraction peaks.

6. The method according to claim 5 , wherein applying the corrected diffraction spectrum comprises correcting the diffraction spectrum to account for a depth of penetration of the X-rays into the substrate.

7. The method according to claim 1 , wherein sensing the X-rays comprises receiving and detecting the X-rays using an integrated circuit comprising a detector array and a readout circuit, wherein the readout circuit is covered by a non-metallic shield to prevent the diffracted X-rays from striking the readout circuit.

8. A method for analysis, comprising:

directing a converging beam of X-rays toward a surface of a sample including an epitaxial layer that is formed over a substrate;

simultaneously sensing the X-rays that are diffracted from the epitaxial layer and from the substrate while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum comprising at least a first diffraction peak due to the substrate and a second diffraction peak due to the epitaxial layer; and

finding an angular distance between the first and second diffraction peaks while correcting the diffraction spectrum to account for a depth of penetration of the X-rays into the substrate.

9. The method according to claim 8 , wherein correcting the diffraction spectrum comprises computing a shift of the first diffraction peak due to the penetration as a function of angles of incidence and diffraction of the X-rays.

10. An apparatus for analysis, comprising:

an X-ray source, which is configured to direct a converging beam of X-rays toward a surface of a sample;

a detector assembly, which is configured to sense the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum of the sample; and

a processor, which is configured to calibrate a relation between an angle of the diffracted X-rays and an angular step size in the diffraction spectrum, and to apply the calibrated relation to correct the angular scale of the diffraction spectrum in order to compensate for a non-uniform property of the converging beam.

11. The apparatus according to claim 10 , wherein the processor is configured to correct the diffraction spectrum by modifying an intensity in the diffraction spectrum.

12. The apparatus according to claim 11 , wherein the processor is configured to apply an intensity correction as a function of the angle of the sensed X-rays in order to compensate for a non-uniform intensity of the converging beam.

13. The apparatus according to claim 10 , and wherein the processor is configured to analyze the diffraction spectrum so as to identify a characteristic of the sample.

14. The apparatus according to claim 13 , wherein the sample includes an epitaxial layer that is formed over a substrate, and wherein the diffraction spectrum comprises at least a first diffraction peak due to the substrate and a second diffraction peak due to the epitaxial layer, and wherein the processor is configured to use the corrected diffraction spectrum in finding an angular distance between the first and second diffraction peaks.

15. The apparatus according to claim 14 , wherein the processor is configured to correct the diffraction spectrum to account for a depth of penetration of the X-rays into the substrate.

16. The apparatus according to claim 10 , wherein the X-ray source comprises an integrated circuit comprising a detector array and an readout circuit, wherein the readout circuit is covered by a non-metallic shield to prevent the diffracted X-rays from striking the readout circuit.

17. An apparatus for analysis, comprising:

an X-ray source, which is configured to direct a converging beam of X-rays toward a surface of a sample including an epitaxial layer that is formed over a substrate;

a detector assembly, which is configured to sense simultaneously the X-rays that are diffracted from the epitaxial layer and from the substrate while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum comprising at least a first diffraction peak due to the substrate and a second diffraction peak due to the epitaxial layer; and

a processor, which is configured to find an angular distance between the first and second diffraction peaks while correcting the diffraction spectrum to account for a depth of penetration of the X-rays into the substrate.

18. The apparatus according to claim 17 , wherein the processor is configured to correct the diffraction spectrum by computing a shift of the first diffraction peak due to the penetration as a function of angles of incidence and diffraction of the X-rays.

Assignments (2)
CHANGE OF NAME Recorded Apr 13, 2021
From: JORDAN VALLEY SEMICONDUCTORS LTD.
To: BRUKER TECHNOLOGIES LTD.
Reel/Frame 055994/0565 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 28, 2011
From: WORMINGTON, MATTHEW; KROHMAL, ALEXANDER; BERMAN, DAVID; OPENGANDEN, GENNADY
To: JORDAN VALLEY SEMICONDUCTORS LTD.
Reel/Frame 026818/0239 →
Continuity (2)
Provisional Application 61363653 · Jul 13, 2010
Related Publication 20120014508A1 · Jan 19, 2012