Build-up package for integrated circuit devices, and methods of making same
A device is disclosed which includes, in one illustrative example, an integrated circuit die having an active surface and a molded body extending around a perimeter of the die, the molded body having lips that are positioned above a portion of the active surface of the die. Another illustrative example includes an integrated circuit die having an active surface, a molded body extending around a perimeter of the die and a CTE buffer material formed around at least a portion of the perimeter of the die adjacent the active surface of the die, wherein the CTE buffer material is positioned between a portion of the die and a portion of the molded body and wherein the CTE buffer material has a coefficient of thermal expansion that is intermediate a coefficient of thermal expansion for the die and a coefficient of thermal expansion for the molded body.
1. A device, comprising:
an integrated circuit die having an active surface, a backside, and bond pads at the active side, wherein the bond pads have a contact surface facing away from the die;
a coefficient of thermal expansion (CTE) buffer material formed at a perimeter of the die and at least substantially coplanar with the active surface; and
a molded body extending around the perimeter of the die and around the CTE buffer material, wherein at least a portion of the molded body is in direct contact with at least a portion of the perimeter of the die;
wherein the die has a first CTE, the molded body has a second CTE different from the first CTE, and the CTE buffer material has a third CTE intermediate to the first CTE and the second CTE;
wherein the CTE buffer material has a triangular cross-section; and
wherein the integrated circuit die has a sidewall contacting the CTE buffer, and wherein the CTE buffer material has a first leg generally parallel with the sidewall and contacting approximately half the sidewall, a second leg generally coplanar with the active surface of the integrated circuit die, and a third leg extending between the first leg and the second leg.
2. A The device of claim 1
wherein the first leg is between approximately 150-250 μm.
3. A device, comprising:
an integrated circuit die having an active surface, a backside, and bond pads at the active side, wherein the bond pads have a contact surface facing away from the die;
a coefficient of thermal expansion (CTE) buffer material formed at a perimeter of the die and at least substantially coplanar with the active surface;
a molded body extending around the perimeter of the die and around the CTE buffer material, wherein the die has a first CTE, the molded body has a second CTE different from the first CTE, and the CTE buffer material has a third CTE intermediate to the first CTE and the second CTE;
wherein the CTE buffer material is formed of a material that is dispensed as a liquid or liquid-like material and thereafter cured; and
wherein the integrated circuit die has a sidewall contacting the CTE buffer, and wherein the CTE buffer material has a first leg generally parallel with the sidewall and contacting approximately half the sidewall, a second leg generally coplanar with the active surface of the integrated circuit die, and a third leg extending between the first leg and the second leg.
4. The device of claim 3 wherein the first leg is between approximately 150-250 μm.