Microelectromechanical resonators with passive frequency tuning using built-in piezoelectric-based varactors
View Patent ↗Microelectromechanical resonators include a resonator body with a built-in piezoelectric-based varactor diode. This built-in varactor diode supports passive frequency tuning by enabling low-power manipulation of the stiffness of a piezoelectric layer, in response to controlling charge build-up therein at resonance. A resonator may include a composite stack of a bottom electrode, a piezoelectric layer on the bottom electrode and at least one top electrode on the piezoelectric layer. The piezoelectric layer includes a built-in varactor diode, which is defined by at least two regions having different concentrations of electrically active dopants therein.
1. A microelectromechanical resonator, comprising:
a resonator body comprising a composite stack of a bottom electrode, a piezoelectric layer on said bottom electrode and at least one top electrode on said piezoelectric layer, said piezoelectric layer comprising a built-in varactor diode defined by at least two regions in said piezoelectric layer having different concentrations of electrically active dopants therein.
2. The resonator of claim 1 , wherein the electrically active dopants in a first of the at least two regions are N-type dopants.
3. The resonator of claim 1 , wherein the at least two regions comprise an N-type piezoelectric layer on an undoped piezoelectric layer.
4. The resonator of claim 1 , wherein the built-in varactor diode comprises a first piezoelectric region therein doped with N-type impurities selected from a group consisting of silicon and chromium.
5. The resonator of claim 4 , wherein said piezoelectric layer comprises aluminum nitride.
6. The resonator of claim 5 , wherein said bottom electrode and said at least one top electrode comprise molybdenum.
7. The resonator of claim 1 , wherein said resonator body comprises a suspended semiconductor layer anchored to a surrounding substrate by a pair of tethers; and wherein said bottom electrode extends between the semiconductor layer and said piezoelectric layer.
8. The resonator of claim 7 , wherein the built-in varactor comprises an N-type piezoelectric layer on an undoped piezoelectric layer; and wherein the N-type piezoelectric layer defines an interface with said bottom electrode or said at least one top electrode.
9. The resonator of claim 7 , wherein the N-type piezoelectric layer defines a doped/undoped piezoelectric junction with the undoped piezoelectric layer.
10. The resonator of claim 9 , wherein the N-type piezoelectric layer comprises an N-type aluminum nitride layer having impurities therein selected from a group consisting of silicon and chromium.
11. The resonator of claim 1 , wherein the at least two regions comprise an N-type piezoelectric region and a P-type piezoelectric region that defines a P-N junction with the N-type piezoelectric region.
12. The resonator of claim 11 , wherein the P-type piezoelectric region is doped with P-type impurities selected from a group consisting of zinc and magnesium.
13. The resonator of claim 1 , wherein the at least two regions comprise a N-type aluminum nitride region and at least one of an undoped aluminum nitride region and a P-type aluminum nitride region.
14. The resonator of claim 1 , wherein the at least two regions comprise a P-type aluminum nitride region and at least one of an undoped aluminum nitride region and an N-type aluminum nitride region.
15. A periodic signal generator, comprising:
a resonator body including a composite stack of a semiconductor layer anchored by at least a pair of tethers to a surrounding substrate, a bottom electrode on the semiconductor layer, a piezoelectric layer on the bottom electrode and at least one sense electrode and at least one drive electrode on the piezoelectric layer, said piezoelectric layer comprising a built-in varactor diode defined by at least two regions in said piezoelectric layer having different concentrations of electrically active dopants therein; and
a DC reference voltage generator electrically coupled to one of the sense electrode and drive electrode.
16. The generator of claim 15 , wherein the at least two regions are of opposite conductivity type.
17. The generator of claim 15 , wherein the at least two regions are of net first conductivity type.
18. The generator of claim 15 , wherein one of the at least two regions is undoped and another of the at least two regions is of net N-type conductivity or net P-type conductivity.
19. The generator of claim 15 , wherein one of the at least two regions is doped with dopants selected from a group consisting of silicon, chromium, zinc and magnesium.
20. The generator of claim 15 , wherein a width of a depletion region in the varactor diode changes in response to changes in a magnitude of a voltage generated by said DC reference voltage generator.