Using unstable nitrides to form semiconductor structures
View Patent ↗Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
1. A semiconductor structure comprising:
a semiconductor substrate;
a layer of metal nitride including at least three metal atoms per nitrogen atom;
a layer of copper nitride over the layer of metal nitride; and
a layer of the pure metal over the layer of copper nitride.
2. The structure of claim 1 wherein said substrate includes a nitride material.
3. The structure of claim 2 wherein said substrate includes a titanium or tungsten nitride.
4. The structure of claim 1 wherein said metal is copper.
5. The structure of claim 1 wherein the layer of pure metal is formed by annealing the copper nitride layer.
6. The structure of claim 1 wherein the layer of pure metal is formed by annealing the copper nitride layer at an elevated temperature from about 200° C. to about 500° C.
7. The structure of claim 1 wherein the layer of metal nitride comprises TaN or TiN.
8. The structure of claim 1 wherein the copper nitride layer is formed by chemical vapor deposition (CVD) or atomic layer deposition (ALD).
9. A semiconductor structure comprising:
a substrate;
a substantially nitride free metal layer over said substrate;
a metal nitride over said metal, said metal nitride including at least three metal atoms per nitrogen atom; and
a copper nitride layer over the metal nitride.
10. The structure of claim 9 wherein said metal is copper.
11. The structure of claim 9 wherein said substrate is a nitride.
12. The structure of claim 11 wherein said substrate includes tungsten or titanium nitride.
13. A semiconductor structure comprising:
a substrate;
a metal nitride layer over said substrate;
a copper nitride layer over the metal nitride layer; and
a region of substantially nitride free metal formed in the copper nitride layer.
14. The structure of claim 13 wherein said metal nitride does not include the same metal as said substantially nitride free metal.
15. The structure of claim 13 wherein said metal is elongated.
16. The structure of claim 15 wherein said metal is a nanowire.
17. The structure of claim 13 wherein the substantially nitride free metal is formed by annealing the copper nitride layer.
18. The structure of claim 13 wherein the substantially nitride free metal is formed by annealing the copper nitride layer at an elevated temperature from about 200° C. to about 500° C.
19. The structure of claim 13 wherein the metal nitride layer comprises TaN or TiN.
20. The structure of claim 13 wherein the copper nitride layer is formed by chemical vapor deposition (CVD) or atomic layer deposition (ALD).