Semiconductor device
A semiconductor device may include a substrate and a through electrode. The substrate may have a first surface and a second surface opposite to the first surface, the substrate including circuit patterns formed on the first surface. The through electrode penetrates the substrate and may be electrically connected to the circuit pattern, the through electrode including a first plug that extends from the first surface in a thickness direction of the substrate and a second plug that extends from the second surface in the thickness direction of the substrate so as to be connected to the first plug.
1. A semiconductor device, comprising:
a substrate having a first surface and a second surface opposite to the first surface, the substrate including circuit patterns on the first surface;
a through electrode penetrating the substrate and electrically connected to the circuit patterns, the through electrode including a first plug and a second plug, the first plug extending from the first surface in a thickness direction of the substrate, the second plug extending from the second surface in the thickness direction of the substrate, the second plug connected to the first plug; and
an upper wiring layer on the first surface of the substrate, the upper wiring layer configured to connect the circuit patterns to the first plug, the upper wiring layer including wirings that are electrically connected to the circuit patterns.
2. The semiconductor device of claim 1 , wherein at least one of the wirings contacts an upper surface of the first plug.
3. The semiconductor device of claim 1 , wherein the first plug penetrates the upper wiring layer.
4. The semiconductor device of claim 1 , wherein the first plug has a first diameter, and the second plug has a second diameter that is greater than the first diameter.
5. The semiconductor device of claim 4 , wherein the second diameter of the second plug tapers from the second surface in the thickness direction of the substrate.
6. The semiconductor device of claim 1 , wherein the second plug includes a recess in an upper portion thereof.
7. A semiconductor device comprising:
a substrate having a first surface and an opposing second surface;
at least one circuit pattern on the first surface of the substrate;
a first plug electrically connected to the at least one circuit pattern, the first plug extending from the first surface;
a second plug extending from the second surface, the second plug electrically connected to the first plug, the second plug having a width that is greater than that of the first plug;
an upper wiring layer on the first surface of the substrate, the upper wiring layer configured to connect the at least one circuit pattern to the first plug; and
at least one wiring within the upper wiring layer, the at least one wiring electrically connecting the first plug and the at least one circuit pattern.
8. The semiconductor device of claim 7 , further comprising:
an insulation interlayer on the first surface of the substrate, the insulation interlayer covering the at least one circuit pattern.
9. The semiconductor device of claim 7 , wherein the second plug has a diameter greater than that of the first plug.
10. The semiconductor device of claim 7 , wherein the second plug has a diameter that tapers as the second plug extends from the second surface into the substrate.
11. The semiconductor device of claim 1 , wherein an entirety of the upper wiring layer is above the circuit patterns and the through electrode.