IP Library Granted Patent US 9,041,255
Granted Patent B2
US 9,041,255 · App. 13/188,632 · Granted May 26, 2015

High capacity electronic switch

Inventor: Moon J. Kim (Wappingers, NY)
G01R19/0092H01L29/02
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Quick Facts
Patent No.
US 9,041,255
App. No.
13/188,632
Granted
May 26, 2015
Kind
B2
Abstract

Embodiments of the present invention provide an electronic switch for commodity use. Specifically, embodiments of this invention provide a high capacity intelligent electronic switch for commodity use. A flexible film substrate is used along with a field-effect transistor (FET) to produce a commodity switch. Multiple printed flexible electronics PFE substrates are stacked to and integrated into an electronic switch system. Various methods are used to measure power consumption within the switch. The modular cell design allows for horizontal and vertical scaling.

Claims (21)

1. An electronic switch cell, comprising:

a flexible film substrate having a top plate, a top control, a bottom plate, and a bottom control; and

a field-effect transistor (FET) positioned between the top plate and the bottom plate, wherein components of the FET are operatively affixed to the top plate, the bottom plate, the top control and the bottom control.

2. The electronic switch cell of claim 1 , wherein the FET includes a source that is operatively affixed to the bottom plate, a gate that is operatively affixed to the top control and to the bottom control, and a drain terminal that is operatively affixed to the top plate.

3. The electronic switch cell of claim 1 , the flexible film substrate further comprising a substantially parallel plate structure in which the top plate is substantially parallel to the bottom plate.

4. An electronic switch system comprising a plurality of stackable electronic switch cells that are operatively coupled with each other, each electronic switch cell comprising:

a flexible film substrate having a top plate, a top control, a bottom plate, and a bottom control; and

a field-effect transistor (FET) positioned between the top plate and the bottom plate, wherein components of the FET are operatively affixed to the top plate, the bottom plate, the top control and the bottom control.

5. The electronic switch system of claim 4 , wherein the FET includes a source that is operatively affixed to the bottom plate, a gate that is operatively affixed to the top control and to the bottom control, and a drain terminal that is operatively affixed to the top plate.

6. The electronic switch system of claim 4 , the flexible film substrate further comprising a substantially parallel plate structure in which the top plate is substantially parallel to the bottom plate.

7. The electronic switch system of claim 4 , wherein the plurality of electronic switch cells are stacked using thru-film vias (TFV).

8. The electronic switch system of claim 4 , wherein the plurality of electronic switch cells are stacked using bump bonds.

9. A method for assembling an electronic switch system, comprising:

providing a plurality of stackable electronic switch cells, each switch cell comprising:

a flexible film substrate having a top plate, a top control, a bottom plate, and a bottom control; and

a field-effect transistor (FET) positioned between the top plate and the bottom plate, wherein components of the FET are operatively affixed to the top plate, the bottom plate, the top control and the bottom control; and

stacking the provided plurality of switch cells using at least one of thru-film vias and bump bonds.

10. The method of claim 9 , wherein the FET includes a source that is operatively affixed to the bottom plate, a gate that is operatively affixed to the top control and to the bottom control, and a drain terminal that is operatively affixed to the top plate.

11. The method of claim 9 , further comprising applying a current to the flexible film substrate, the FET controlling current flow within the electronic switch based on the applied current the flexible film substrate comprising a substantially parallel plate structure in which the top plate is substantially parallel to the bottom plate.

12. The method of claim 9 , further comprising coupling each of the stacked electronic switch cells coupled with a voltage divider having a first resistor and a second resistor; and

measuring power consumption with the each of the electronic switches using voltage scaling.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 10, 2019
From: KIM, MOON J.
To: SVTECHNET LLC
Reel/Frame 050678/0222 →
Continuity (1)
Related Publication 20130021086A1 · Jan 24, 2013