Silicon-containing film, resin composition, and pattern formation method
A pattern-forming method includes forming a silicon-containing film on a substrate, the silicon-containing film having a mass ratio of silicon atoms to carbon atoms of 2 to 12. A shape transfer target layer is formed on the silicon-containing film. A fine pattern is transferred to the shape transfer target layer using a stamper that has a fine pattern to form a resist pattern. The silicon-containing film and the substrate are dry-etched using the resist pattern as a mask to form a pattern on the substrate in nanoimprint lithography. According to another aspect of the invention, a silicon-containing film includes silicon atoms and carbon atoms. A mass ratio of silicon atoms to carbon atoms is 2 to 12. The silicon-containing film is used for a pattern-forming method employed in nanoimprint lithography.
1. A pattern-forming method comprising:
forming a silicon-containing film on a substrate, the silicon-containing film having a mass ratio of silicon atoms to carbon atoms of 2 to 12;
forming a shape transfer target layer on the silicon-containing film;
transferring a fine pattern to the shape transfer target layer using a stamper that has a fine pattern to form a resist pattern; and
dry-etching the silicon-containing film and the substrate using the resist pattern as a mask to form a pattern on the substrate in nanoimprint lithography.
2. The pattern-forming method according to claim 1 , wherein the silicon-containing film has a silicon atom content of 36 to 47 mass % based on total atoms included in the silicon-containing film.
3. The pattern-forming method according to claim 1 , wherein the silicon-containing film includes a silicon atom, a carbon atom, and an oxygen atom.
4. A silicon-containing film comprising:
silicon atoms; and
carbon atoms, a mass ratio of silicon atoms to carbon atoms of 2 to 12, the silicon-containing film being used for a pattern-forming method employed in nanoimprint lithography, the method comprising:
forming the silicon-containing film on a substrate;
forming a shape transfer target layer on the silicon-containing film;
transferring a fine pattern to the shape transfer target layer using a stamper that has a fine pattern to form a resist pattern; and
dry-etching the silicon-containing film and the substrate using the resist pattern as a mask to form a pattern on the substrate.
5. A resin composition used to form the silicon-containing film according to claim 4 , the resin composition comprising a resin including a structural unit obtained by hydrolyzing a compound shown by the following formula (1),
SiX 4 (1)
wherein X individually represent an alkoxy group or a halogen atom.