Memory devices and their operation with different sets of logical erase blocks
Methods of operating memory devices include storing data of a first type in a first set of logical erase blocks and storing data of a second type in a second set of logical erase blocks. The logical erase blocks of the first set of logical erase blocks each have a first size the logical erase blocks of the second set of logical erase blocks each have a second size different than the first size.
1. A memory device, comprising:
an array of memory cells organized into a plurality of erasable physical blocks, wherein the plurality of physical blocks are further organized into a plurality of logical erase blocks each having a size of one or more physical blocks; and
a control register storing an address of the array of memory cells, wherein the address is indicative of at least one of a starting address and an ending address for physical blocks associated with a particular portion of the array of memory cells having a particular logical erase block size different than a logical erase block size of another portion of the array of memory cells.
2. The memory device of claim 1 , wherein the address is indicative of the ending address for physical blocks associated with the particular portion of the array of memory cells having the particular logical erase block size, and wherein the address is indicative of a starting address for physical blocks associated with a different portion of the array of memory cells having a second logical erase block size different than the particular logical erase block size.
3. The memory device of claim 2 , wherein the starting address for physical blocks associated with the particular portion of the array of memory cells having the particular logical erase block size is a first physical block address of the memory device.
4. The memory device of claim 2 , wherein an ending address for physical blocks associated with the different portion of the array of memory cells having the second logical erase block size is a last physical block address of the memory device.
5. The memory device of claim 2 , wherein the starting address for physical blocks associated with the different portion of the array of memory cells having the second logical erase block size is the next physical block address after the ending address for physical blocks associated with the particular portion of the array of memory cells having the particular logical erase block size.
6. The memory device of claim 2 , wherein the particular logical erase block size comprises one or more physical blocks, wherein the second logical erase block size comprises two or more physical blocks.
7. The memory device of claim 2 , wherein the particular logical erase block size comprises two or more physical blocks, wherein the second logical erase block size comprises one or more physical blocks.
8. The memory device of claim 1 , wherein the address is indicative of the starting address for physical blocks associated with the particular portion of the array of memory cells having the particular logical erase block size, and wherein the control register further stores a second address indicative of the ending address for physical blocks associated with the particular portion of the array of memory cells having the particular logical erase block size.
9. The memory device of claim 8 , wherein the control register further stores a third address indicative of a starting address for physical blocks associated with a different portion of the array of memory cells having a second logical erase block size different than the particular logical erase block size, and wherein the control register further stores a fourth address indicative of an ending address for physical blocks associated with the different portion of the array of memory cells having the second logical erase block size.
10. The memory device of claim 1 , wherein the control register comprises latches.
11. The memory device of claim 10 , wherein the latches reset upon power-down of the memory device.
12. The memory device of claim 1 , wherein the control register comprises non-volatile registers.
13. The memory device of claim 12 , wherein the non-volatile registers are selected from the group consisting of non-volatile memory cells and hard-programmed devices.
14. A memory device, comprising:
an array of memory cells organized into a plurality of erasable physical blocks, wherein the plurality of physical blocks are further organized into a plurality of logical erase blocks each having a size of one or more physical blocks; and
a control register storing addresses of the array of memory cells, wherein the addresses are each indicative of a starting address and an ending address for physical blocks associated with different portions of the array of memory cells, wherein each portion of the array of memory cells has a corresponding logical erase block size and wherein at least one portion of the array of memory cells has a corresponding logical erase block size different than a logical erase block size corresponding to a different portion of the array of memory cells.
15. The memory device of claim 14 , wherein each portion of the array of memory cells has a corresponding logical erase block size that is different than a corresponding logical erase block size of any of the other portions of the array of memory cells.
16. The memory device of claim 14 , wherein each address is indicative of the ending address for physical blocks associated with one portion of the array of memory cells and a starting address for physical blocks associated with another portion of the array of memory cells.
17. The memory device of claim 14 , wherein each particular address is a physical block address of a last physical block for physical blocks associated with one portion of the array of memory cells and wherein a starting address for physical blocks associated with a subsequent portion of the array of memory cells is a next physical block address after the particular address.
18. A software driver as non-transitory computer-readable instructions to cause a processor to perform a method of operating a memory device, the method comprising:
determining a characteristic of data to be stored in the memory device; and
directing the data to a particular portion of the memory device in response to the characteristic of the data.
19. The software driver of claim 18 , wherein the method further comprises:
directing the data to a first portion of the memory device in response to the data having a first characteristic, wherein the first portion of the memory device comprises a set of first logical erase blocks with each first logical erase block comprising a first number of physical blocks; and
directing the data to a second portion of the memory device in response to the data having a second characteristic different than the first characteristic, wherein the second portion of the memory device comprises a set of second logical erase blocks with each second logical erase block comprising a second number of physical blocks different than the first number of physical blocks.
20. The software driver of claim 18 , wherein, in the method, determining a characteristic of data comprises determining at least one of a file type of the data, a size of the data, a source of the data and an expected updating frequency.
21. A processor configured to perform a method of operating a memory device, the method comprising:
determining a characteristic of data to be stored in the memory device, wherein the characteristic is indicative of an expected updating frequency;
directing the data to a first portion of the memory device in response to the data having a first expected updating frequency, wherein the first portion of the memory device comprises a set of first logical erase blocks with each first logical erase block comprising a first number of physical blocks; and
directing the data to a second portion of the memory device in response to the data having a second expected updating frequency different than the first expected updating frequency, wherein the second portion of the memory device comprises a set of second logical erase blocks with each second logical erase block comprising a second number of physical blocks greater than the first number of physical blocks;
wherein the second expected updating frequency is less than the first expected updating frequency.