Method of fabricating a semiconductor device
View Patent ↗A semiconductor device includes: a transistor including source and drain diffusion-layers, a gate insulating film and a gate electrode; first and second plugs formed in a first interlayer-insulating film and connected to the source and drain diffusion-layers, respectively; a third plug extending through a second interlayer-insulating film and connected to the first plug; a first interconnection-wire formed on the second interlayer-insulating film and connected to the third plug; a second interconnection-wire formed on a third interlayer-insulating film and intersecting the first interconnection-wire; a fourth interlayer-insulating film; a hole extending through the fourth, third and second interlayer-insulating films, the hole being formed such that a side surface of the second interconnection-wire is exposed; and a fourth plug filling the hole via an intervening dielectric film and connected to the second plug, wherein a capacitor is formed using the fourth plug, the second interconnection-wire and the dielectric film sandwiched therebetween.
1. A semiconductor device comprising:
a substrate;
a first interlayer insulating film over the substrate;
a first interconnection wire over the first interlayer insulating film, the first interconnection wire being extending in a first direction;
a second interlayer insulating film covering the first interconnection wire;
a second interconnection wire over the second interlayer insulating film, the second interconnection wire being extending in a second direction intersecting the first direction;
a third interlayer insulating film covering the second interconnection wire; and
a hole extending through the first, second and third interlayer insulating films such that a side surface of the second interconnection wire is exposed.
2. The semiconductor device according to claim 1 , further comprising:
a dielectric film formed on an inner wall of the hole; and
a conductor formed in the hole, whereby a capacitor is formed using the conductor, the second interconnection wire and the dielectric film sandwiched therebetween.
3. The semiconductor device according to claim 1 , further comprising:
a third interconnection wire over the third interlayer insulating film, the third interconnection wire being extending in the first direction;
a fourth interlayer insulating film covering the third interconnection wire, wherein
the hole extends through the first, second, third and fourth interlayer insulating films such that side surfaces of the second and third interconnection wires are exposed.
4. A method of fabricating a semiconductor device, comprising:
forming a first interlayer insulating film over a substrate;
forming a first interconnection wire over the first interlayer insulating film, the first interconnection wire being extending in a first direction;
forming a second interlayer insulating film covering the first interconnection wire;
forming a second interconnection wire over the second interlayer insulating film, the second interconnection wire being extending in a second direction intersecting the first direction;
forming a third interlayer insulating film covering the second interconnection wire; and
forming a hole extending through the first, second and third interlayer insulating films such that a side surface of the second interconnection wire is exposed.
5. The method of fabricating a semiconductor device according to claim 4 , further comprising:
forming a dielectric film formed on an inner wall of the hole; and
forming a conductor formed in the hole, whereby a capacitor is formed using the conductor, the second interconnection wire and the dielectric film sandwiched therebetween.
6. The method of fabricating a semiconductor device according to claim 4 , further comprising:
forming a third interconnection wire over the third interlayer insulating film, the third interconnection wire being extending in the first direction;
forming a fourth interlayer insulating film covering the third interconnection wire, wherein
the hole extends through the first, second, third and fourth interlayer insulating films such that side surfaces of the second and third interconnection wires are exposed.