Fast thermal annealing of GaN LEDs
View Patent ↗Methods of performing fast thermal annealing in forming GaN light-emitting diodes (LEDs) are disclosed, as are GaN LEDs formed using fast thermal annealing having a time duration of 10 seconds or faster. An exemplary method includes forming a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method includes performing fast thermal annealing of the p-GaN layer using either a laser or a flash lamp. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance.
1. A method of forming a GaN light-emitting diode (LED), comprising:
forming atop a substrate a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer, wherein the p-GaN layer has a dopant activation;
performing fast thermal annealing of the p-GaN layer, wherein the fast thermal annealing has a time duration of about 10 seconds or faster, in order to increase the dopant activation;
forming a transparent conducting layer atop the GaN multilayer structure; and
adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer wherein the n-contact has a n-contact resistance, the n-contact resistance being in the range from about 1×10 −4 ohm-cm 2 to about 1×10 −6 ohm-cm 2 .
2. The method of claim 1 , wherein the fast thermal annealing is performed through the transparent conducting layer.
3. The method of claim 2 , further comprising performing the fast thermal annealing of the p-contact.
4. The method of claim 3 , wherein the p-contact has a p-contact resistance, and said performing fast thermal annealing of the p-contact results in a p-contact resistance in the range from about 4×10 −4 ohm-cm 2 to about 1×10 −6 ohm-cm 2 .
5. The method of claim 3 , further comprising performing fast thermal annealing of the n-contact.
6. The method of claim 5 , further comprising:
forming a ledge in the GaN multilayer structure and transparent conducting layer to expose the n-GaN layer; and
forming the n-contact on the exposed GaN layer.
7. The method of claim 1 , wherein the fast thermal annealing has a maximum anneal temperature T AM in the range from about 700° C. to about 1,500° C.
8. The method of claim 7 , wherein the fast thermal annealing utilizes either a laser or a flash lamp.
9. The method of claim 8 , wherein fast thermal annealing is performed with a flash lamp that irradiates the entire p-GaN layer in a single flash.
10. The method of claim 1 , wherein the p-GaN layer has an activated dopant concentration after fast thermal annealing in the range from about 5×10 17 cm −3 to about 5×10 19 cm −3 .
11. The method of claim 1 , further comprising forming the active layer to comprise a multiple quantum well structure.
12. A method of forming a GaN light-emitting diode (LED), comprising:
forming a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer;
forming a p-contact layer adjacent the p-GaN layer;
forming a n-contact atop the n-GaN layer, wherein the n-contact has a n-contact resistance, the n-contact resistance being in the range from about 1×10 −4 ohm-cm 2 to about 1×10 −6 ohm-cm 2 and the n-GaN layer has a dopant activation; and
performing fast thermal annealing of the n-contact, wherein the fast thermal annealing has a time duration of about 10 seconds or faster in order to increase the dopant activation.
13. The method of claim 12 where the fast thermal annealing is performed using a laser or a flash lamp.
14. The method of claim 13 , wherein said performing of fast thermal annealing of the n-contact results in the resistance range.
15. The method of claim 12 , further comprising conducting the fast thermal annealing to have maximum anneal temperature T AM in the range from about 700° C. to about 1,500° C.
16. A GaN light-emitting diode (LED), comprising:
a substrate;
a GaN multilayer structure formed atop the substrate and having a n-GaN layer and a p-GaN layer that sandwich an active layer, wherein the p-GaN layer comprises a fast thermally annealed layer having an activated dopant concentration of greater than about 5×10 17 cm −3 and up to about 5×10 19 cm −3 ;
a transparent conducting layer atop the GaN multilayer structure;
a p-contact formed atop the transparent conducting layer;
a n-contact formed atop an exposed portion of the n-GaN layer and having an n-contact resistance in the range from about 1×10 −4 ohm-cm 2 to about 1×10 −6 ohm-cm 2 ; and
wherein the fast thermally annealed layer is fast thermally annealed for a time duration of 10 seconds or faster.
17. The GaN LED of claim 16 , wherein the p-contact has an ohmic contact resistance in the range from about 4×10 −4 to about 1×10 −6 ohm-cm 2 .
18. A GaN light-emitting diode (LED), comprising:
a substrate;
a p-contact layer formed atop the substrate;
a GaN multilayer structure formed atop the p-contact layer and having a n-GaN layer and a p-GaN layer that sandwich an active layer, with the p-GaN layer adjacent the p-contact layer, and the n-GaN layer comprising a fast thermally annealed layer having an active dopant concentration of about 3×10 19 to about 3×10 21 cm −3 ;
a n-contact formed atop the n-GaN layer and having a n-contact resistance in the range from about 1×10 −4 ohm-cm 2 to about 1×10 −6 ohm-cm 2 ; and
wherein the fast thermally annealed layer is fast thermally annealed for a time duration of 10 seconds or faster.
19. The GaN LED of claim 18 , wherein the fast thermally annealed layer is one of a flash lamp fast thermally annealed layer and a laser fast thermally annealed layer.