IP Library Granted Patent US 8,940,629
Granted Patent B2
US 8,940,629 · App. 13/200,246 · Granted Jan 27, 2015

Ball grid array semiconductor package and method of manufacturing the same

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Quick Facts
Patent No.
US 8,940,629
App. No.
13/200,246
Granted
Jan 27, 2015
Kind
B2
Abstract

In a method of manufacturing a ball grid array (BGA) semiconductor package, micro balls are mounted onto a respective plurality of through-holes formed in a substrate, and a semiconductor device is mounted on a die pad portion of the substrate. The semiconductor device and the micro balls are electrically connected with bonding wires. The semiconductor device, the die pad portion, the bonding wires, and parts of the micro balls are sealed together with an insulating resin to form an encapsulation member. The encapsulation member and the substrate are then cut into individual BGA semiconductor packages.

Claims (38)

1. A method of manufacturing a ball grid array (BGA) semiconductor package, comprising:

forming a plurality of through-holes in a region of a substrate;

mounting micro balls in the plurality of through-holes formed in the substrate;

bonding a semiconductor device on a die pad portion of the substrate arranged in a region of the substrate excluding the region thereof in which the plurality of through-holes are formed, the region in which the die pad is arranged being provided on a side of the substrate on which the micro balls are mounted;

electrically connecting the semiconductor device and the micro balls by with bonding wires;

encapsulating the semiconductor device, the die pad portion, the bonding wires, and parts of the micro balls together with an encapsulation resin, to thereby form an encapsulation member; and

cutting the encapsulation member and the substrate into individual pieces of BGA semiconductor packages.

2. A method of manufacturing a BGA semiconductor package according to claim 1 , wherein the forming of the plurality of through-holes in the substrate is carried out by any one of a drill process, a laser process, a pattern etching process, and a pressing process using a mold.

3. A method of manufacturing a BGA semiconductor package according to claim 1 , wherein in the mounting of the micro balls onto the plurality of through-holes formed in the substrate, the mounting of the micro balls is carried out by any one of a mounting method, a suction method, and a substrate vibrating method.

4. A method of manufacturing a BGA semiconductor package according to claim 1 , further comprising fixing the micro balls into the plurality of through-holes formed in the substrate, wherein the fixing of the micro balls is carried out by any one of pressing, suction, and using an adhesive.

5. A method of manufacturing a BGA semiconductor package according to claim 4 , wherein the fixing of the micro balls into the plurality of through-holes formed in the substrate is carried out using an adhesive of a UV tape that is adhered to a lower surface side of the substrate in advance before the micro balls are mounted into the plurality of through-holes formed in the substrate.

6. A method of manufacturing a BGA semiconductor package according to claim 1 , wherein in the encapsulating of the semiconductor device, the die pad portion, the bonding wires, and the parts of the micro balls together with the encapsulation resin to thereby form the encapsulation member, the resin encapsulation is carried out by one of a transfer molding method and a potting method under a state in which the micro balls are fixed into the plurality of through-holes of the substrate by any one of pressing, suction, and using an adhesive.

7. A method of manufacturing a BGA semiconductor package according to claim 1 , wherein the cutting of the encapsulation member and the substrate into the individual member into the individual pieces of the BGA semiconductor packages is carried out by a dicing method.

8. A method of manufacturing a BGA semiconductor package according to claim 1 , wherein the substrate is made of one of a ceramic or a glass.

9. A method of manufacturing a BGA semiconductor package according to claim 1 , wherein diameter of each of the plurality of micro balls is within the range of from 5 micrometers to 500 micrometers.

10. A method of manufacturing a BGA semiconductor package according to claim 1 , wherein each of the micro balls has a core formed of a resin material, an outer periphery of the core being covered with one of a single-layer metal composition or a multi-layer metal composition.

11. A method of manufacturing a BGA semiconductor package according to claim 1 , wherein each of the micro balls is formed of one of a single-layer metal composition or a multi-layer metal composition.

12. A method of manufacturing a ball grid array (BGA) semiconductor package, comprising:

forming a plurality of through-holes in a substrate having an upper surface side and a lower surface side;

adhering a UV tape to the lower surface side of the substrate;

fixing a plurality of micro balls into the respective plurality of through-holes from the upper surface side of the substrate using an adhesive of the UV tape;

bonding a semiconductor device on a die pad portion of the substrate arranged in a region of the upper surface side of the substrate excluding a region of the substrate in which the plurality of through-holes are formed;

electrically connecting the semiconductor device and the micro balls with bonding wires;

encapsulating the semiconductor device, the die pad portion, the bonding wires, and parts of the micro balls together with an encapsulation resin, to thereby form an encapsulation member; and

cutting the encapsulation member into individual pieces of BGA semiconductor packages.

13. A method of manufacturing a ball grid array (BGA) semiconductor package, comprising:

mounting a plurality of micro balls onto a respective plurality of through-holes formed in a substrate;

mounting a semiconductor device on a die pad portion of the substrate;

electrically connecting the semiconductor device and the micro balls with bonding wires;

sealing the semiconductor device, the die pad portion, the bonding wires, and parts of the micro balls together with an insulating resin to form an encapsulation member; and

cutting the encapsulation member and the substrate into individual BGA semiconductor packages.

14. A method of manufacturing a BGA semiconductor package according to claim 13 , further comprising the step of forming of the plurality of through-holes in the substrate by any one of a drill process, a laser process, a pattern etching process, and a pressing process using a mold.

15. A method of manufacturing a BGA semiconductor package according to claim 13 , wherein the plurality of micro balls are mounted onto a respective plurality of through-holes formed in a substrate by any one of a mounting method, a suction method, and a substrate vibrating method.

16. A method of manufacturing a BGA semiconductor package according to claim 13 , wherein the plurality of micro balls are mounted under a state in which the plurality of micro balls are fixed onto the respective plurality of through-holes by a pressing method, a suction method, or through application of an adhesive material.

17. A method of manufacturing a BGA semiconductor package according to claim 16 , wherein the plurality of micro balls are fixed onto the respective plurality of through-holes through application of an adhesive of a UV tape.

18. A method of manufacturing a BGA semiconductor package according to claim 17 , further comprising the step of applying the UV tape to a lower surface side of the substrate before mounting the plurality of micro balls onto the respective plurality of through-holes formed in a substrate.

19. A method of manufacturing a BGA semiconductor package according to claim 13 , wherein the separation of the encapsulation member and the substrate into the individual BGA semiconductor packages is carried out by a dicing method.

20. A method of manufacturing a BGA semiconductor package according to claim 13 , wherein diameter of each of the plurality of micro balls is within the range of from 5 micrometers to 500 micrometers.

Assignments (3)
CHANGE OF NAME Recorded Mar 12, 2018
From: SII SEMICONDUCTOR CORPORATION
To: ABLIC INC.
Reel/Frame 045567/0927 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 10, 2016
From: SEIKO INSTRUMENTS INC.
To: SII SEMICONDUCTOR CORPORATION
Reel/Frame 038058/0892 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 21, 2011
From: KIMURA, NORIYUKI
To: SEIKO INSTRUMENTS INC.
Reel/Frame 027204/0231 →