Method for growing group 13 nitride crystal and group 13 nitride crystal
To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.
1. A method for growing a group 13 nitride crystal, the method comprising growing a group 13 nitride crystal on a seed-crystal substrate under heating in an oxygen-free pressurized atmosphere containing nitrogen gas while the seed-crystal substrate is immersed in a melt mixture containing a group 13 metal and a flux,
wherein the group 13 nitride crystal is grown under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface; and the group 13 nitride crystal is subsequently grown under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.
2. The method for growing a group 13 nitride crystal according to claim 1 ,
wherein the second stirring condition is milder than the first stirring condition.
3. The method for growing a group 13 nitride crystal according to claim 1 ,
wherein the first stirring condition is a condition in which a stirring direction is reversed at intervals of a first predetermined time, and the second stirring condition is a condition in which a stirring direction is reversed at intervals of a second predetermined time that is longer than the first predetermined time; or the first stirring condition is a condition in which rotation is performed in a single direction at a first rotation speed, and the second stirring condition is a condition in which rotation is performed in a single direction at a second rotation speed that is lower than the first rotation speed.
4. The method for growing a group 13 nitride crystal according to claim 1 , wherein a cycle defined as an operation of growing the group 13 nitride crystal under the first stirring condition and subsequently growing the group 13 nitride crystal under the second stirring condition, is repeated twice or more.
5. The method for growing a group 13 nitride crystal according to claim 1 ,
wherein the group 13 nitride crystal is grown under the first stirring condition; the seed-crystal substrate that is overlain by the grown crystal is subsequently taken out from the pressurized atmosphere into the air; a surface of the crystal is planarized so as to have a surface roughness Ra of 1.5 μm or less; the crystal substrate is cleaned to remove oxide of the group 13 metal and/or oxide of the flux; and the seed-crystal substrate is subsequently brought back into the pressurized atmosphere and the group 13 nitride crystal is grown under the second stirring condition.
6. A method for growing a group 13 nitride crystal, the method comprising growing a group 13 nitride crystal on a seed-crystal substrate under heating in a pressurized atmosphere containing nitrogen gas while the seed-crystal substrate is immersed in a melt mixture containing a group 13 metal and a flux,
wherein the group 13 nitride crystal is grown under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface; and the group 13 nitride crystal is subsequently grown under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.