METHOD AND COMPOSITION FOR REMOVING RESIST, ETCH RESIDUE, AND COPPER OXIDE FROM SUBSTRATES HAVING COPPER, METAL HARDMASK AND LOW-K DIELECTRIC MATERIAL
A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising copper, low-k dielectric material and TiN, TiNxOy or W wherein the composition includes water, a Cu corrosion inhibitor, at least one halide anion selected from Cl − or Br − , and, where the metal hard mask comprises TiN or TiNxOy, at least one hydroxide source.
1 . A semiconductor processing composition for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate which includes copper, low-k dielectric material and a hardmask selected from TiN or TiNxOy, the composition comprising water, at least one halide anion selected from Cl − or Br − , at least one oxidizing agent, at least one Cu corrosion inhibitor, and at least one hydroxide source.
2 . The semiconductor processing composition of claim 1 wherein the pH value is at least 7.0 or higher.
3 . A semiconductor processing composition for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate which includes copper, low-k dielectric material and a hardmask selected from W, the composition comprising water, at least one halide anion selected from Cl − or Br − , at least one oxidizing agent, and at least one Cu corrosion inhibitor.
4 . The semiconductor processing composition of claim 1 or claim 3 wherein (a) the oxidizing agent is selected from the group consisting of hydrogen peroxide, ozone, ferric chloride, permanganate, peroxoborate, perchlorate, persulfate, ammonium peroxydisulfate, peracetic acid, urea hydroperoxide, percarbonate, perborate, and mixtures thereof, and (b) the Cu corrosion inhibitor is selected from the group consisting of heterocyclic compounds which contain a nitrogen atom in the form of ═N— as a ring form member, and mixtures thereof.
5 . A method for simultaneously removing polymeric materials and etch residues and selectively etching TiN or TiNxOy from a semiconductor device comprising Cu, low-k dielectric material and TiN or TiNxOy which comprises: contacting the semiconductor device with an aqueous composition comprising at least one halide anion selected from Cl − or Br − , at least one oxidizing agent, at least one Cu corrosion inhibitor, and at least one hydroxide source.
6 . The method of claim 5 wherein the pH has a value of at least 7.0 or higher.
7 . The method of claim 5 wherein the temperature is in the range of from 20° C. to about 60° C. and the oxidizing agent is selected from the group consisting of hydrogen peroxide, ozone, ferric chloride, permanganate, peroxoborate, perchlorate, persulfate, ammonium peroxydisulfate, per acetic acid, urea hydroperoxide, percarbonate, perborate, and mixtures thereof.
8 . The method of claim 5 or claim 7 wherein the Cu corrosion inhibitor is selected from the group consisting of heterocyclic compounds which contain a nitrogen atom in the form of ═N— as a ring form member, and mixtures thereof.
9 . The composition of claim 1 , wherein the hydroxide source is present in the composition at a concentration which is sufficient to adjust the value of the pH to at least 7.0.