Granted Patent B2

US 8,652,865 · App. 13/210,563 · Granted Feb 18, 2014

Abstract

Claims (10)

1. A method of attaching a MEMS to a bonding wafer, comprising:

forming an adhesion layer on the MEMS, wherein the adhesion layer comprises a silicon layer and a first silicon germanium layer on the silicon layer;

forming a forming a first eutectic layer comprising a second silicon germanium layer on the silicon germanium layer and over the MEMS, wherein the first silicon germanium layer has an average germanium concentration less than an average germanium concentration of the second silicon germanium layer;

patterning the first eutectic layer into a checkerboard pattern;

forming second eutectic layer comprising aluminum over the bonding wafer wherein the first material and the second material are a eutectic pair; and

applying heat and pressure in contacting the first eutectic layer and the second eutectic layer to form a eutectic bond between the MEMS and the bonding wafer.

2. The method of claim 1 , wherein the first silicon germanium layer has a graded concentration of germanium.

3. The method of claim 2 , wherein the graded concentration is characterized by having a higher concentration of germanium at an interface with the first eutectic layer than at an interface with the silicon layer.

4. The method of claim 1 , wherein the patterning comprises performing an etch of silicon germanium.

5. The method of claim 1 , wherein the checkerboard pattern comprises rows and columns of segments of the first eutectic layer.

Assignments (22)