Semiconductor device having both IGBT area and diode area
There is known a semiconductor device in which an IGBT structure is provided in an IGBT area and a diode structure is provided in a diode area, the IGBT area and the diode area are both located within a same substrate, and the IGBT area is adjacent to the diode area. In this type of semiconductor device, a phenomenon that carriers accumulated within the IGBT area flow into the diode area when the IGBT structure is turned off. In order to prevent this phenomenon, a region of shortening lifetime of carriers is provided at least in a sub-area that is within said IGBT area and adjacent to said diode area. In the sub-area, emitter of IGBT structure is omitted.
1. A semiconductor device comprising:
an IGBT structure provided in an IGBT area within a substrate; and
a diode structure provided in a diode area within said substrate,
wherein said IGBT area is adjacent to said diode area,
a region of shortening lifetime of carriers is provided in said IGBT area and said diode area, and
a density of articles of shortening lifetime of carriers in a sub-area that is within said IGBT area and adjacent to said diode area is higher than a density of articles of shortening lifetime of carriers in the other area that is within said IGBT area and separated from said diode area by said sub-area and said density of articles of shortening lifetime of carriers in said sub-area is higher than a density of articles of shortening lifetime of carriers in said diode area.
2. The semiconductor device of claim 1 ,
wherein said substrate has a first surface and a second surface,
said region of shortening lifetime of carriers has a first part and a second part,
said first part is provided along said first surface in said diode area and said sub-area where emitters of said IGBT structure are not provided,
said second part is provided along said second surface in said IGBT area, and
both said first and second parts are provided in said sub-area.
3. The semiconductor device of claim 1 ,
wherein said region of shortening lifetime of carriers extends from said IGBT area to said diode area,
a collector electrode of said IGBT structure and a cathode electrode of said diode structure are formed on a surface of said substrate, and
a penetrating distance of said region of shortening lifetime of carriers measured from said surface varies such that it has a short distance in said IGBT area except said sub-area, and it has a long distance in said diode area.
4. The semiconductor device of claim 3 ,
wherein said region of shortening lifetime of carriers extends over whole thickness of said diode area.
5. The semiconductor device of claim 1 ,
wherein said region of shortening lifetime of carriers extends from said sub-area to said diode area,
a collector electrode of said IGBT structure and a cathode electrode of said diode structure are formed on a surface of said substrate, and
a penetrating distance of said region of shortening lifetime of carriers measured from said surface varies such that it has a long distance in said diode area, and it increases up to said long distance in said sub-area.
6. The semiconductor device of claim 5 ,
wherein said region of shortening lifetime of carriers extends over whole thickness of said diode area.
7. A semiconductor device comprising:
an IGTBT structure provided in an IGBT area within a substrate; and
a diode structure provided in a diode area within said substrate,
wherein said IGBT area is adjacent to said diode area,
a region of shortening lifetime of carriers is provided in said IGBT area,
a density of articles of shortening lifetime of carriers in a sub-area that is within said IGBT area and adjacent to said diode area is higher than a density of articles of shortening lifetime of carriers in the other area that is within said IGBT area and separated from said diode area by said sub-area,
a collector electrode of said IGBT structure and a cathode electrode of said diode structure are formed on a surface of said substrate,
a penetrating distance of said region of shortening lifetime of carriers measured from said surface changes within said sub-area such that it has a short distance at a side adjacent to an area where emitters of said IGBT structure are provided and it has a long distance at a side adjacent to said diode area, and
a penetrating distance change rate at said side adjacent to said area where emitters of said IGBT structure are provided is steep and a penetrating distance change rate at said side adjacent to said diode area is gentle.
8. A semiconductor device comprising a substrate;
said substrate comprising an IGBT area and an diode area;
said IGBT area comprising a complete sub-area and an incomplete sub-area,
wherein,
said IGBT area is adjacent to said diode area,
said complete sub-area, said incomplete sub-area and said diode area are arranged in sequence,
a complete IGBT structure comprising an emitter, a gate electrode and a collector is provided in said complete sub-area,
an incomplete IGBT structure comprising said collector but lacking at least one of said emitter and said gate electrode is provided in said incomplete sub-area,
a diode structure is provided in said diode area,
a density of lattice defects introduced into said incomplete sub-area is higher than a density of lattice defects introduced into said complete sub-area, and
said density of lattice defects introduced into said incomplete area is higher than a density of lattice defects introduced into said diode area.
9. A semiconductor device comprising a substrate;
said substrate comprising an IGBT area and an diode area;
said IGBT area comprising a complete sub-area and an incomplete sub-area, wherein,
said IGBT area is adjacent to said diode area,
said complete sub-area, said incomplete sub-area and said diode area are arranged in sequence,
a complete IGBT structure comprising an emitter, a gate electrode and a collector is provided in said complete sub-area,
an incomplete IGBT structure comprising said collector but lacking at least one of said emitter and said gate electrode is provided in said incomplete sub-area,
a diode structure is provided in said diode area,
a density of recombination centers of carriers introduced into said incomplete sub-area is higher than a density of recombination centers of carriers introduced into said complete sub-area, and
said density of recombination centers of carriers introduced into said incomplete area is higher than a density of recombination centers of carriers introduced into said diode area.