Fin-FET and method of forming the same
A method of forming a Fin-FET is provided. A substrate is provided, then a mask layer is formed thereabove. A first trench is formed in the substrate and the mask layer. A semiconductor layer is formed in the first trench. Next, the mask layer is removed such that the semi-conductive layer becomes a fin structure embedded in the substrate and protruded above the substrate. Finally, a gate layer is formed on the fin structure.
1. A method of forming a Fin-FET, comprising:
providing a substrate;
forming a mask layer on the substrate;
forming a first trench having an acute angle less than 30 degrees in the mask layer and the substrate;
forming a semiconductor layer in the first trench;
completely removing the mask layer such that the semiconductor layer becomes a fin structure embedded in the substrate and protruding from the substrate; and
forming a gate layer on the fin structure.
2. The method of forming a Fin-FET according to claim 1 , wherein after forming the semiconductor layer further comprises forming a STI to define an active region.
3. The method of forming a Fin-FET according to claim 2 , wherein the STI is formed before removing the mask layer.
4. The method of forming a Fin-FET according to claim 1 , wherein the step of forming the semiconductor layer comprises a selective epitaxial growth process.
5. The method of forming a Fin-FET according to claim 1 , wherein the step of forming the semiconductor layer comprises a cyclic thermal annealing process.
6. The method of forming a Fin-FET according to claim 1 , further comprising forming a material layer between the substrate and the mask layer.
7. The method of forming a Fin-FET according to claim 6 , wherein the material layer comprises SiO 2 .
8. The method of forming a Fin-FET according to claim 1 , wherein the semiconductor layer comprises a silicon layer, a germanium layer, a silicon-germanium layer or the combination thereof.
9. A method of forming a Fin-FET, comprising:
providing a substrate;
forming a mask layer on the substrate;
forming a first trench having a tapered angle less than 30 degrees in the mask layer and the substrate;
forming a semiconductor layer in the first trench;
forming a STI to define an active region, wherein the semiconductor layer is disposed in the active region;
after forming the STI, completely removing the mask layer such that the semiconductor layer becomes a fin structure embedded in the substrate and protruding from the substrate; and
forming a gate layer on the fin structure.
10. The method of forming a Fin-FET according to claim 9 , wherein the step of forming the semiconductor layer comprises a selective epitaxial growth process.
11. The method of forming a Fin-FET according to claim 9 , wherein the step of forming the semiconductor layer comprises a cyclic thermal annealing process.
12. The method of forming a Fin-FET according to claim 9 , further comprising forming a material layer between the substrate and the mask layer.
13. The method of forming a Fin-FET according to claim 12 , wherein the material layer comprises SiO 2 .
14. The method of forming a Fin-FET according to claim 9 , wherein the semiconductor layer comprises a silicon layer, a germanium layer, a silicon-germanium layer or the combination thereof.