Metal gate structure and fabrication method thereof
View Patent ↗A metal gate structure located on a substrate includes a gate dielectric layer, a metal layer and a titanium aluminum nitride metal layer. The gate dielectric layer is located on the substrate. The metal layer is located on the gate dielectric layer. The titanium aluminum nitride metal layer is located on the metal layer.
1. A first and second metal gate structure located on a substrate, comprising:
a gate dielectric layer located on the substrate;
a barrier layer located on the gate dielectric layer;
a first work function metal layer located on a part of the barrier layer;
a second work function metal layer located on the barrier layer and the first work function metal layer, wherein the first work function metal layer, the second work function metal layer, and the gate dielectric layer all have a U-shaped profile structure; and
a titanium aluminum nitride metal layer having a U-shaped profile structure directly located on the second work function metal layer, so that the first metal gate structure comprises the gate dielectric layer, the barrier layer, the first work function layer, the second work function metal layer and the titanium aluminum nitride metal layer, and the second metal gate structure comprises the gate dielectric layer, the barrier layer, the second work function metal layer and the titanium aluminum nitride metal layer.
2. The metal gate structure according to claim 1 , wherein the second work function metal layer comprises a titanium aluminum metal layer.
3. The metal gate structure according to claim 1 , wherein the gate dielectric layer comprises a dielectric layer having a high dielectric constant.
4. The metal gate structure according to claim 3 , wherein the gate dielectric layer further comprises a buffer layer located between the substrate and the dielectric layer having a high dielectric constant.
5. The metal gate structure according to claim 1 , wherein both the first metal gate structure and the second metal gate structure further comprise an electrode layer located on the titanium aluminum nitride metal layer.
6. The metal gate structure according to claim 1 , wherein the second metal gate structure can be a metal gate structure of an NMOS transistor.
7. The metal gate structure according to claim 1 , wherein the first metal gate structure can be a metal gate structure of a PMOS transistor and the second metal gate structure can be a metal gate structure of a NMOS transistor in a CMOS transistor.
8. The metal gate structure according to claim 7 , wherein the first metal gate structure of the PMOS transistor in the CMOS transistor further comprises a titanium nitride layer located between the gate dielectric layer and the first work function metal layer.