Formation of a super steep retrograde channel
View Patent ↗Systems and methods for raised source/drain with super steep retrograde channel are described. In accordance with a first embodiment, a semiconductor device comprises a substrate comprising a surface and a gate oxide disposed above the surface comprising a gate oxide thickness. The semiconductor device further comprises a super steep retrograde channel region formed at a depth below the surface. The depth is about ten to thirty times the gate oxide thickness. Embodiments may provide a more desirable body biasing voltage to threshold voltage characteristic than is available under the conventional art.
1. A method comprising:
forming a super steep retrograde channel region at a depth below a surface of a substrate;
forming a gate oxide layer on the surface of the substrate, wherein the depth is a product of a number and a thickness of the gate oxide layer; and
forming a structure on the surface of the substrate and adjacent to the gate oxide layer.
2. The method of claim 1 , further comprising:
forming a gate on the gate oxide layer, wherein the structure is located adjacent to the gate oxide layer and the gate.
3. The method of claim 2 , wherein the depth is at least 10 times the thickness of the gate oxide layer.
4. The method of claim 2 , wherein the depth is less than 30 times the thickness of the gate oxide layer.
5. The method of claim 1 , wherein the structure comprises epitaxially-grown material.
6. The method of claim 1 , wherein the structure comprises silicide.
7. The method of claim 1 , wherein said forming the super steep retrograde channel region comprises:
using a masked implant.
8. A method comprising:
forming a super steep retrograde channel region at a depth below a surface of a substrate;
forming a gate oxide layer on the surface of the substrate, wherein the depth is a product of a number and a thickness of the gate oxide layer; and
forming a source structure on the surface of the substrate and adjacent to the gate oxide layer.
9. The method of claim 8 , wherein the source structure comprises epitaxially-grown material.
10. The method of claim 8 , wherein the source structure comprises silicide.
11. The method of claim 8 , further comprising:
forming a spacer to insulate the source structure from a gate.
12. The method of claim 8 , further comprising:
forming a source extension within the substrate and beneath the source structure.
13. A method comprising:
forming a super steep retrograde channel region at a depth below a surface of a substrate;
forming a gate oxide layer on the surface of the substrate, wherein the depth is a product of a number and a thickness of the gate oxide layer; and
forming a plurality of raised structures on the surface of the substrate and adjacent to the gate oxide layer.
14. The method of claim 13 , further comprising:
forming a gate on the gate oxide layer, wherein a first raised structure of the plurality of raised structures is located on a first side of the gate oxide layer and the gate, wherein a second raised structure of the plurality of raised structures is located on a second side of the gate oxide layer and the gate, and wherein the first side and the second side are opposite sides.
15. The method of claim 14 , wherein the depth is at least 10 times the thickness of the gate oxide layer.
16. The method of claim 14 , wherein the depth is less than 30 times the thickness of the gate oxide layer.
17. The method of claim 13 , wherein the plurality of raised structures comprise epitaxially-grown material.
18. The method of claim 13 , wherein the plurality of raised structures comprise silicide.
19. The method of claim 13 , wherein the plurality of raised structures comprise a raised source structure.
20. The method of claim 13 , wherein the plurality of raised structures comprise a raised drain structure.