GaN-based light-emitting diode and method for manufacturing the same

1. A GaN-based light-emitting diode (LED), comprising:

a substrate;

a first epitaxial layer and a second epitaxial layer formed on the substrate, the first epitaxial layer comprising a P-type layer, the second epitaxial layer comprising a P-type layer, a light-emitting layer and an N-type layer;

a conductive layer, deposited on the second epitaxial layer;

a P-electrode, arranged on the conductive layer; and

an N-electrode, arranged on the N-type layer,

wherein two layers of cross-staggered through holes are formed on sides of the first epitaxial layer and the second epitaxial layer of the LED.

2. A method for manufacturing the GaN-based light-emitting diode (LED), comprising:

providing a substrate,

depositing a first transition layer on the substrate;

forming a first patterned transition layer by etching with a mask;

growing a first epitaxial layer on the first patterned transition layer;

depositing a second transition layer on the first epitaxial layer;

forming a second patterned transition layer by etching with a mask, such that the second patterned transition layer and the first patterned transition layer are cross-staggered with each other;

growing a second epitaxial layer on the second patterned transition layer, wherein the second epitaxial layer comprises a P-type layer, a light-emitting layer and an N-type layer;

depositing a protection layer on the second epitaxial layer, dicing to obtain chips with a defined size;

removing the first patterned transition layer and the second patterned transition layer on the substrate and the protection layer on the second epitaxial layer by wet etching, so as to form a structure with two layers of cross-staggered through holes;

forming a conductive layer on the second epitaxial layer; and

forming a P-electrode and an N-electrode by etching with a mask.

3. The method for manufacturing the GaN-based LED according to claim 2 , wherein the material of the substrate is sapphire or silicon carbide (SiC).

4. The method for manufacturing the GaN-based LED according to claim 2 , wherein the material of the transition layer is one or more selected from a group consisting of SiO 2 , SiN x and TiO 2 .

5. The method for manufacturing the GaN-based LED according to claim 2 , wherein the patterns on the first patterned transition layer and the patterns on the second patterned transition layer both are periodically distributed.

6. The method for manufacturing the GaN-based LED according to claim 2 , wherein the patterns on the first patterned transition layer and the patterns on the second patterned transition layer both have a shape of a rectangle or a polygon other than a rectangle.

7. The method for manufacturing the GaN-based LED according to claim 2 , wherein the material of the protection layer is one or more selected from a group consisting of SiO 2 , SiN x and TiO 2 .

8. The method for manufacturing the GaN-based LED according to claim 2 , wherein the dicing is performed with laser or diamond.

9. The method for manufacturing the GaN-based LED according to claim 2 , wherein the through holes are periodically distributed.

10. The method for manufacturing the GaN-based LED according to claim 2 , wherein the through holes have a shape of a rectangle or a polygon other than a rectangle.

11. The method for manufacturing the GaN-based LED according to claim 2 , wherein the wet etching uses an etchant that is one or more selected from a group consisting of HF, NH 4 F, CH 3 COOH, and H 2 O 2 .

12. The method for manufacturing the GaN-based LED according to claim 2 , wherein the material of the conductive layer is one or more selected from a group consisting of Ni/Au alloy, Ni/ITO alloy, and ITO.