A contact fuse is provided. The contact fuse includes a metal oxide semiconductor (MOS) transistor and a control circuit having outputs coupled to a plurality of terminals of the MOS transistor. The control circuit is operable to forward bias a body-source junction during a programming operation and operable to short the body-source junction during a sensing operation. A method of operating a contact fuse is also provided.
1. A method for programming a contact fuse, the method comprising:
biasing a gate terminal of the contact fuse with a first voltage, the first voltage having a first value;
biasing a source terminal of the contact fuse with a second voltage, the second voltage having a negative value relative to a body of the contact fuse; and
biasing a drain terminal of the contact fuse with the first voltage.
2. The method of claim 1 , further comprising:
biasing a body terminal of the contact fuse to forward bias the body-source junction.
3. The method of claim 1 , further comprising:
biasing a body terminal of the contact fuse to ground.
4. The method of claim 1 , further comprising:
turning on a passgate transistor coupled to the gate terminal of the contact fuse, wherein the passgate transistor is operable to provide the first voltage to the gate terminal of the contact fuse.
5. The method of claim 1 , wherein a value of the first voltage is at least two times greater than a value of a threshold voltage of the contact fuse.
6. The method of claim 1 , wherein a voltage difference between the gate terminal and the source terminal is at least two times a threshold voltage of the contact fuse.
7. The method of claim 1 , further comprising:
forming a void region in one of a source contact of the source terminal or a drain contact of the drain terminal, wherein the void region is formed by depletion of at least a portion of one of the source contact or the drain contact.
8. The method of claim 1 , wherein:
the contact fuse includes a metal oxide semiconductor (MOS) transistor having the gate terminal, the source terminal and the drain terminal;
a source of the MOS transistor includes a contact having tungsten therein; and
a drain of the MOS transistor includes a contact having tungsten therein.
9. The method of claim 1 , wherein the programming operation results in metal diffusing from a contact region into silicon at one or more of a source of the contact fuse or a drain of the contact fuse.
10. A method for operating a contact fuse circuit, the method comprising:
determining whether one of a programming operation or a sensing operation is to be performed;
during a programming operation for the contact fuse:
biasing a gate terminal of the contact fuse with a voltage having a first value,
forward biasing a body-source junction of the contact fuse, and
biasing a drain terminal of the contact fuse with the voltage having the first value; and
during a sensing operation for the contact fuse:
shorting the body-source junction of the contact fuse, and
biasing the gate terminal and the drain terminal of the contact fuse with a voltage having a second value that is less than the first value.
11. The method of claim 10 , further comprising:
biasing a source terminal of the contact fuse with a negative voltage.
12. The method of claim 10 , further comprising:
turning on a passgate transistor coupled to the gate terminal, wherein the passgate transistor is operable to provide the voltage having the first value to the gate terminal of the contact fuse.
13. The method of claim 10 , wherein the programming operation further comprises:
adjusting the voltage having the first value to generate a current less than 10 milliamps through the contact fuse.
14. The method of claim 10 , wherein the programming operation further comprises:
biasing a body terminal of the contact fuse to ground.
15. The method of claim 10 , wherein the sensing operation further comprises:
coupling a body terminal of the contact fuse and a source terminal of the contact fuse to ground.
16. The method of claim 10 , wherein the contact fuse includes a metal oxide semiconductor (MOS) transistor.
17. The method of claim 1 , wherein the contact fuse includes tungsten in one of a source contact of the source terminal or a drain contact of the drain terminal.
18. The method of claim 10 , wherein the programming operation results in a void at one of a contact of a source of the contact fuse or a contact of a drain of the contact fuse.
19. The method of claim 10 , wherein the drain terminal of the contact fuse includes tungsten.
20. The method of claim 10 , wherein a source terminal of the contact fuse includes tungsten.