DISPLAY APPARATUS HAVING QUANTUM DOT LAYER

1 . A display apparatus, comprising:

a light source, used to provide a light beam;

a thin film transistor (TFT) layer, having a plurality of TFTs arranged in a matrix;

a liquid crystal layer, having a plurality of liquid crystal molecules, and disposed on the thin film transistor (TFT) layer, and the TFTs being used to control the liquid crystal molecules;

a bottom polarizer, attached to a bottom surface of the thin film transistor (TFT) layer, and being used to convert light polarization of the light beam;

a top polarizer, attached to a top surface of the liquid crystal layer, and being used to convert light polarization of the light beam, wherein the bottom polarizer, the thin film transistor (TFT) layer, the liquid crystal layer and the top polarizer are disposed above the light source to display an image which comprises a plurality of pixels; and

a quantum dot layer, disposed above the top polarizer, and having a plurality of quantum dot blocks which comprise quantum dots and are arranged in a matrix, wherein the quantum dots when excited by light beam passing through the top polarizer convert the light wavelength so as to determine the color of each pixel of the image.

2 . The display apparatus as claimed in claim 1 , wherein the light source is at least one LED or CCFL, or a back light module.

3 . The display apparatus as claimed in claim 1 , wherein the materials of the quantum dots are selected from a group consisting of BN, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, BeS, BeSe, BeTe, MgS, MgSe, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbO, PbS, PbSe, PbTe, CuF, CuCl, CuBr, CuI and ZnCdSe.

4 . The display apparatus as claimed in claim 1 , wherein the material of the quantum dots is Cd 1-x Zn x Se, and wherein x is in the range of 0.3≦x≦0.45.

5 . The display apparatus as claimed in claim 4 , wherein the material of the quantum dots is Cd 0.62 Zn 0.38 Se.

6 . The display apparatus as claimed in claim 1 , wherein the quantum dots comprise a first quantum dot, a second quantum dot and a third quantum dot, the first quantum dot emits red light when excited by the light beam, the second quantum dot emits green light when excited by the light beam, and the third quantum dot emits blue light when excited by the light beam.

7 . A display apparatus, comprising:

an electrical controller layer, having a plurality of pixels arranged in a matrix;

a light emitting layer, used to provide a light beam, the light emitting layer being disposed above the electrical controller layer, and controlled by the electrical controller layer; and

a quantum dot layer, disposed above the light emitting layer to display an image, which comprises a plurality of pixels, the quantum dot layer having a plurality of quantum dot blocks which comprise quantum dots and are arranged in a matrix, wherein each pixel of the electrical controller layer corresponds to at least one quantum dot block, the quantum dots when excited by the light beam convert the light wavelength so as to determine the color of each pixel of the image.

8 . The display apparatus as claimed in claim 7 , wherein the light emitting layer is an OLED or a PLED.

9 . The display apparatus as claimed in claim 7 , wherein the electrical controller layer is a the thin film transistor (TFT) layer.

10 . The display apparatus as claimed in claim 7 , wherein the light emitting layer has a plurality of pixels arranged in a matrix, the pixels of the light emitting layer correspond to the pixels of the electrical controller layer, and the pixels of the electrical controller layer control the on/off of the pixels of the light emitting layer.

11 . The display apparatus as claimed in claim 7 , wherein the materials of the quantum dots are selected from a group consisting of BN, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, BeS, BeSe, BeTe, MgS, MgSe, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbO, PbS, PbSe, PbTe, CuF, CuCl, CuBr, CuI and ZnCdSe.

12 . The display apparatus as claimed in claim 7 , wherein the material of the quantum dots is Cd 1-x Zn x Se, wherein x is in the range of 0.3≦x≦0.45.

13 . The display apparatus as claimed in claim 12 , wherein the material of the quantum dots is Cd 0.62 Zn 0.38 Se.

14 . The display apparatus as claimed in claim 7 , wherein the quantum dots comprise a first quantum dot, a second quantum dot and a third quantum dot, the first quantum dot emits red light when excited by the light beam, the second quantum dot emits green light when excited by the light beam, and the third quantum dot emits blue light when excited by the light beam.

15 . A display apparatus, comprising:

an electrical controller layer, having a plurality of pixels arranged in a matrix; and

a quantum dot layer, disposed above the electrical controller layer to display an image which comprise a plurality of pixels, the quantum dot layer having a plurality of quantum dot blocks which comprise quantum dots and are arranged in a matrix, wherein each pixel of the electrical controller layer corresponds to at least one quantum dot block, the quantum dots emit light when excited by the pixels of the electrical controller layer so as to determine the color of each pixel of the image.

16 . The display apparatus as claimed in claim 15 , wherein the electrical controller layer is a the thin film transistor (TFT) layer.

17 . The display apparatus as claimed in claim 15 , wherein the materials of the quantum dots are selected from a group consisting of BN, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, BeS, BeSe, BeTe, MgS, MgSe, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbO, PbS, PbSe, PbTe, CuF, CuCl, CuBr, CuI and ZnCdSe.

18 . The display apparatus as claimed in claim 15 , wherein the material of the quantum dots is Cd 1-x Zn x Se, wherein x is in the range of 0.3≦x≦0.45.

19 . The display apparatus as claimed in claim 18 , wherein the material of the quantum dots is Cd 0.62 Zn 0.38 Se.