IP Library Granted Patent US 8,952,402
Granted Patent B2
US 8,952,402 · App. 13/219,530 · Granted Feb 10, 2015

Solid-state radiation transducer devices having flip-chip mounted solid-state radiation transducers and associated systems and methods

Inventor: Sameer S. Vadhavkar (Boise, ID)
Assignee: Micron Technology, Inc.
H01L33/62H01L33/486H01L33/505H01L33/507H01L2933/0033H01L2224/73204
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Quick Facts
Patent No.
US 8,952,402
App. No.
13/219,530
Granted
Feb 10, 2015
Kind
B2
Abstract

Solid-state radiation transducer (SSRT) devices and methods of manufacturing and using SSRT devices are disclosed herein. One embodiment of the SSRT device includes a radiation transducer (e.g., a light-emitting diode) and a transmissive support assembly including a transmissive support member, such as a transmissive support member including a converter material. A lead can be positioned at a back side of the transmissive support member. The radiation transducer can be flip-chip mounted to the transmissive support assembly. For example, a solder connection can be present between a contact of the radiation transducer and the lead of the transmissive support assembly.

Claims (40)

1. A solid-state radiation transducer (SSRT) device, comprising:

a radiation transducer including

a first semiconductor material,

a contact electrically connected to the first semiconductor material,

a second semiconductor material spaced apart from the first semiconductor material, and

an active region between the first semiconductor material and the second semiconductor material; and

a transmissive support assembly attached to the radiation transducer, the transmissive support assembly including

a transmissive support member having a back side facing toward the radiation transducer, the transmissive support member including a cured matrix material and particles of converter material disposed within the cured matrix material, and

a lead at the back side of the transmissive support member, the lead being electrically connected to the contact,

wherein the radiation transducer is flip-chip mounted to the transmissive support assembly.

2. The SSRT device of claim 1 , wherein the transmissive support member has a textured front side facing away from the radiation transducer.

3. The SSRT device of claim 1 , wherein the transmissive support member has a convex front side facing away from radiation transducer.

4. The SSRT device of claim 1 , further comprising a substantially optically-transparent underfill material between the radiation transducer and the transmissive support assembly.

5. The SSRT device of claim 1 , wherein:

the lead is a first lead;

the contact is a first contact;

the radiation transducer includes a second contact electrically connected to the second semiconductor material;

the transmissive support assembly includes a second lead at the back side of the transmissive support member, the second lead being electrically connected to the second contact;

the SSRT device further comprises

a first solder connection extending between the first contact and the first lead, and

a second solder connection extending between the second contact and the second lead; and

an interface between the first solder connection and the first lead is substantially coplanar with an interface between the second solder connection and the second lead.

6. The SSRT device of claim 1 , wherein:

the transmissive support member is a first transmissive support member;

the transmissive support assembly includes a second transmissive support member positioned between the first transmissive support member and the radiation transducer; and

the second transmissive support member has a refractive index between a refractive index of the radiation transducer and a refractive index of the first transmissive support member.

7. The SSRT device of claim 6 , wherein the second transmissive support member has a refractive index from about 1.6 to about 1.9.

8. The SSRT device of claim 1 , wherein:

the transmissive support member includes a first portion having a first concentration of the particles of the converter material and a second portion having a second concentration of the particles of the converter material; and

the first concentration is higher than the second concentration.

9. The SSRT device of claim 1 , wherein the radiation transducer is a light-emitting diode.

10. The SSRT device of claim 1 , wherein the radiation transducer is a photovoltaic cell.

11. The SSRT device of claim 3 , wherein transmissive support member is hemispherical.

12. The SSRT device of claim 4 , wherein the underfill material is the same as the matrix material.

13. The SSRT device of claim 8 , wherein the first portion of the transmissive support member is closer to the radiation transducer than the second portion of the transmissive support member.

14. The SSRT device of claim 1 , wherein the transmissive support member is molded.

15. The SSRT device of claim 1 , wherein the converter material is a phosphor material.

16. The SSRT device of claim 1 , wherein the matrix material is polymeric.

17. The SSRT device of claim 1 , wherein the matrix material is an epoxy.

18. The SSRT device of claim 1 , wherein the transmissive support member is spaced apart from the radiation transducer.

Assignments (8)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 26, 2011
From: VADHAVKAR, SAMEER S.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 026817/0333 →
Continuity (1)
Related Publication 20130049039A1 · Feb 28, 2013