Methods and apparatuses including memory cells with air gaps and other low dielectric constant materials
View Patent ↗Various embodiments include apparatuses and methods of forming the same. One such apparatus can include a first dielectric material and a second dielectric material, and a conductive material between the first dielectric material and the second dielectric material. A charge storage element, such as a floating gate or charge trap, is between the first dielectric material and the second dielectric material and adjacent to the conductive material. The charge storage element has a first surface and a second surface. The first and second surfaces are substantially separated from the first dielectric material and the second dielectric material, respectively, by a first air gap and a second air gap. Additional apparatuses and methods are disclosed.
1. An apparatus comprising:
a first dielectric material;
a second dielectric material;
a conductive material located between the first dielectric material and the second dielectric material; and
a charge storage element configured to store charge to represent a data state, the charge storage element located substantially between the first dielectric material and the second dielectric material, the charge storage element further being located adjacent to the conductive material, the charge storage element having a first surface and a second surface, the first surface and the second surface being substantially separated electrically from the first dielectric material and the second dielectric material, respectively, by a first air gap and a second air gap that are each substantially in contact with the first surface and the second surface, respectively, of the charge storage element.
2. The apparatus of claim 1 , further comprising a third dielectric material between the conductive material and the charge storage element.
3. The apparatus of claim 2 , wherein a ratio of a thickness of the conductive material to a thickness of the first dielectric material or the second dielectric material is about 1.5 to 1.
4. The apparatus of claim 2 , wherein the third dielectric material comprises silicon dioxide and silicon nitride.
5. The apparatus of claim 1 , further comprising a tunnel dielectric separating the first air gap and the second air gap from a semiconductor material.
6. The apparatus of claim 5 , wherein a ratio of a thickness of the conductive material to a thickness of the tunnel dielectric may be from about 10 to 1 to about 4 to 1.
7. The apparatus of claim 1 , wherein the first dielectric material and the second dielectric material are comprised of the same material.
8. The apparatus of claim 1 , wherein the first dielectric material and the second dielectric material are comprised of different materials.
9. The apparatus of claim 1 , wherein the first surface is opposing to the second surface.
10. The apparatus of claim 1 , wherein the first surface and the second surface are substantially parallel to one another.
11. The apparatus of claim 1 , wherein the charge storage element comprises a substantially toroidal-shaped floating gate.
12. The apparatus of claim 1 , wherein a memory device includes the first dielectric material, the second dielectric material, the conductive material, and the charge storage element, and further comprises a controller coupled to the memory device.
13. An apparatus comprising:
a first dielectric material;
a second dielectric material;
a conductive material located between the first dielectric material and the second dielectric material; and
a charge storage element configured to store charge to represent a data state, the charge storage element located substantially between the first dielectric material and the second dielectric material, the charge storage element further being located adjacent to the conductive material, the charge storage element having a first surface and a second surface, the first surface being substantially separated from the first dielectric material by a low dielectric constant material, and the second surface being substantially separated electrically from the second dielectric material by the low dielectric constant material, the low dielectric constant material comprising air, the low dielectric constant material being substantially in contact with the first surface and the second surface, respectively, of the charge storage element.
14. The apparatus of claim 13 , wherein the conductive material substantially surrounds an outer periphery of the charge storage element.
15. The apparatus of claim 13 , wherein the charge storage element comprises a toroidal-shaped floating gate.
16. The apparatus of claim 15 , wherein a cross-section of the toroidal-shaped floating gate is substantially rectangular.
17. The apparatus of claim 15 , wherein a cross-section of the toroidal-shaped floating gate is substantially square.
18. The apparatus of claim 13 , further comprising a dielectric material between an outer periphery of the charge storage element and an inner periphery of the conductive material.
19. An apparatus comprising:
a pair of dielectric materials substantially parallel to one another and to a surface of a substrate; and
a floating gate located substantially between the pair of dielectric materials, the floating gate having a first surface and an opposing second surface, the first surface and the second surface being substantially parallel to and separated electrically from each of the pair of dielectric materials by a first air gap and a second air gap, respectively, the first air gap and the second air gap each being substantially in contact with the first surface and the opposing second surface, respectively, of the floating gate.
20. The apparatus of claim 19 , wherein the floating gate comprises polysilicon.
21. The apparatus of claim 19 , further comprising a conductive material disposed between the pair of dielectric materials and adjacent to the floating gate.
22. The apparatus of claim 19 , wherein the apparatus comprises a memory cell.
23. The apparatus of claim 19 , further comprising a tunnel dielectric separating the floating gate, the first air gap, and the second air gap from a semiconductor material.
24. The apparatus of claim 19 , wherein the pair of dielectric materials are comprised of the same material.
25. The apparatus of claim 19 , wherein the pair of dielectric materials are comprised of different materials.