IP Library Granted Patent US 8,809,897
Granted Patent B2
US 8,809,897 · App. 13/223,098 · Granted Aug 19, 2014

Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods

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Quick Facts
Patent No.
US 8,809,897
App. No.
13/223,098
Granted
Aug 19, 2014
Kind
B2
Abstract

Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.

Claims (34)

1. A solid state transducer system, comprising:

a solid state emitter; and

an electrostatic discharge device carried by the solid state emitter, the electrostatic discharge device and the solid state emitter having a shared first contact and a shared second contact, with the first and second contacts being the only externally accessible active electrical contacts for both the solid state emitter and the electrostatic discharge device,

wherein the solid state emitter is grown from an epitaxial substrate, and wherein the electrostatic discharge device comprises a portion of the epitaxial substrate.

2. The system of claim 1 , further comprising:

a power source operably connected to the first contact; and

a controller operably connected to the power source, the controller configured to start and stop current from the power source to the first contact.

3. The system of claim 1 wherein the solid state emitter and the electrostatic discharge device together form a single die.

4. The system of claim 1 wherein the electrostatic discharge device comprises a semiconductor junction.

5. A solid state transducer system, comprising:

a solid state emitter; and

an electrostatic discharge device carried by the solid state emitter, the electrostatic discharge device and the solid state emitter having a shared first contact and a shared second contact, with the first and second contacts being the only externally accessible active electrical contacts for both the solid state emitter and the electrostatic discharge device, wherein the electrostatic discharge device includes at least a portion of an epitaxial substrate; and

a via in the epitaxial substrate, wherein the first contact is connected to the solid state emitter with the via.

6. The system of claim 5 wherein the electrostatic discharge device comprises a diode connected between the first contact and the second contact.

7. The system of claim 5 wherein the electrostatic discharge device comprises a semiconductor junction.

8. The system of claim 5 wherein the solid state emitter is positioned between the electrostatic discharge device and the substrate.

9. The system of claim 5 , further comprising:

a power source operably connected to the first contact; and

a controller operably connected to the power source, the controller configured to start and stop current from the power source to the first contact.

10. The system of claim 5 wherein the solid state emitter and the electrostatic discharge device together form a single die.

11. The system of claim 5 wherein the electrostatic discharge device is connected in parallel with the solid state emitter.

12. A solid state transducer device, comprising:

a single support substrate;

a solid state emitter carried by the single support substrate; and

an electrostatic discharge device carried by the single support substrate, the electrostatic discharge device and the solid state emitter sharing a common first contact and a common second contact, neither the electrostatic discharge device nor the solid state emitter having another support substrate connected between the single support substrate and either the electrostatic device or the solid state emitter,

wherein the solid state emitter is positioned between the electrostatic discharge device and the substrate.

13. The device of claim 12 wherein the electrostatic discharge device comprises a diode connected between the first contact and the second contact.

14. The device of claim 12 wherein the single support substrate includes an epitaxial substrate on which the solid state emitter is epitaxially formed.

15. The device of claim 12 wherein the electrostatic discharge device is connected in parallel with the solid state emitter.

16. A solid state transducer device, comprising:

a single support substrate;

a solid state emitter carried by the single support substrate;

an electrostatic discharge device carried by the single support substrate, the electrostatic discharge device and the solid state emitter sharing a common first contact and a common second contact, neither the electrostatic discharge device nor the solid state emitter having another support substrate connected between the single support substrate and either the electrostatic device or the solid state emitter, wherein the electrostatic discharge device includes at least a portion of an epitaxial substrate; and

a via in the epitaxial substrate, wherein the first contact is connected to the solid state emitter with the via.

Assignments (8)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 31, 2011
From: ODNOBLYUDOV, VLADIMIR; SCHUBERT, MARTIN F.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 026840/0885 →