Solid state transducers with state detection, and associated systems and methods
Solid state transducers with state detection, and associated systems and methods are disclosed. A solid state transducer system in accordance with a particular embodiment includes a support substrate and a solid state emitter carried by the support substrate. The solid state emitter can include a first semiconductor component, a second semiconductor component, and an active region between the first and second semiconductor components. The system can further include a state device carried by the support substrate and positioned to detect a state of the solid state emitter and/or an electrical path of which the solid state emitter forms a part. The state device can be formed from at least one state-sensing component having a composition different than that of the first semiconductor component, the second semiconductor component, and the active region. The state device and the solid state emitter can be stacked along a common axis. In further particular embodiments, the state-sensing component can include an electrostatic discharge protection device, a thermal sensor, or a photosensor.
1. A solid state transducer system, comprising:
a support substrate;
a solid state emitter carried by the support substrate, the solid state emitter comprising a first semiconductor component, a second semiconductor component, and an active region between the first and second semiconductor components; and
a state device carried by a surface of the solid state emitter facing away from the support substrate and positioned to detect a state of at least one of the solid state emitter and an electrical path of which the solid state emitter forms a part, wherein the state device includes an electrostatic discharge device coupled in parallel with the solid state emitter, wherein the electrostatic discharge device is formed from at least one state-sensing component having a silicon semiconductor material with a composition different than that of the first semiconductor component, the second semiconductor component, and the active region, and wherein the silicon semiconductor material is electrically coupled to the solid state emitter,
wherein the state device and the solid state emitter are stacked along a common axis, and wherein the electrostatic discharge device is responsive to a voltage applied to the solid state emitter.
2. The system of claim 1 , further comprising a controller operatively coupled to the solid state emitter and the state device to receive a signal from the state device and control the solid state emitter based at least in part on the signal received from the state device.
3. The system of claim 1 wherein the solid state emitter, the state device, and the support substrate form a single die, and wherein the support substrate is the only support substrate of the die.
4. The system of claim 1 wherein the state device is formed from a plurality of materials disposed conformally and sequentially on the solid state emitter.
5. The system of claim 1 wherein the active region of the solid state emitter includes a first semiconductor material having a first composition and wherein the state-sensing component includes a second semiconductor material having a second composition different than the first composition.
6. The system of claim 1 , further comprising a reflective material positioned between the solid state emitter and the state device to reflect radiation emitted by the solid state emitter.
7. The system of claim 1 , further comprising:
first and second emitter contacts, the first emitter contact electrically connected to the first semiconductor component, the second emitter contact electrically connected to the second semiconductor component; and
first and second state device contacts connected to the state device, the emitter contacts being addressable separately from the state device contacts.
8. The system of claim 7 wherein the emitter contacts and the state device contacts are accessible from the same side of the solid state emitter.
9. The system of claim 7 wherein the state device contacts and one of the emitter contacts are accessible from one side of the solid state emitter, and the other emitter contact is accessible from an opposite side of the solid state emitter.
10. The system of claim 1 wherein the solid state emitter and the state device are integrally formed from portions of a common epitaxial growth substrate.
11. The system of claim 10 , further comprising the common epitaxial growth substrate.
12. The system of claim 1 wherein:
the state device is formed from a plurality of materials disposed conformally and sequentially on the solid state emitter;
the solid state emitter, the state device, and the support substrate form a single die;
the support substrate is the only support substrate of the die; and
the solid state emitter and the state device are integrally formed from portions of a common epitaxial growth substrate.
13. The solid state transducer system of claim 1 , further comprising a reflector between the silicon semiconductor material and the solid state emitter.
14. The solid state transducer system of claim 1 wherein the silicon semiconductor material comprises amorphous silicon.
15. The solid state transducer system of claim 1 wherein:
the electrostatic discharge device includes an electrostatic junction;
the electrostatic junction includes a first conductive material and a second conductive material; and
the silicon semiconductor material is between the first and second conductive materials.
16. The solid state transducer system of claim 15 wherein the electrostatic junction is a first electrostatic junction, and wherein the electrostatic discharge device includes a second electrostatic junction connected in series with the first electrostatic junction.
17. A solid state transducer, comprising:
a support substrate;
a solid state emitter having a first semiconductor component, a second semiconductor component, and an active region therebetween; and
a state device carried by the support substrate and including an electrostatic discharge device, wherein the electrostatic discharge device includes a state sensing component that is electrically coupled in parallel with the solid state emitter, wherein the state sensing component is formed from a silicon semiconductor material and positioned to detect a state of at least one of the solid state emitter and an electrical path of which the solid state emitter forms a part, and wherein the silicon semiconductor material has a composition different than that of the first semiconductor component, the second semiconductor component, and the active region,
wherein the state device and the solid state emitter are stacked along a common axis, and wherein at least a portion of the state device is formed epitaxially with the solid state emitter.
18. The solid state transducer of claim 17 wherein at least one of the first and second semiconductor components comprises gallium nitride.
19. A solid state transducer system, comprising:
a solid state emitter including a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials; and
a state device stacked on the solid state emitter along a common axis, wherein the state device is positioned to detect a state of at least one of the solid state emitter and an electrical path of which the solid state emitter forms a part, wherein the state device includes an electrostatic discharge device electrically coupled in parallel with the solid state emitter,
wherein—
the electrostatic discharge device is formed from at least one state-sensing component having a silicon semiconductor material that is electrically coupled to the solid state emitter, and
the silicon semiconductor material includes a composition different than that of the first semiconductor material, the second semiconductor material, and the active region.
20. The solid state transducer system of claim 19 wherein the electrostatic discharge device includes an electrostatic junction, and wherein the silicon semiconductor material is a component of the electrostatic junction.
21. The solid state transducer system of claim 19 wherein the electrostatic discharge device includes a plurality of electrostatic junctions, and wherein the silicon semiconductor material is a component of at least one of the electrostatic junctions.
22. The solid state transducer system of claim 21 , wherein the electrostatic junctions are electrically connected in series.
23. The solid state transducer system of claim 19 wherein the silicon semiconductor material and the state device are integrally formed from portions of a common epitaxial growth substrate.
24. The solid state transducer system of claim 23 wherein at least one of the first and second semiconductor materials comprises gallium nitride.