Semiconductor device and light-emitting device
View Patent ↗To provide a highly reliable semiconductor device including an oxide semiconductor. Further to provide a highly reliable light-emitting device including an oxide semiconductor. A second electrode sealed together with a semiconductor element including an oxide semiconductor hardly becomes inactive. A hydrogen ion and/or a hydrogen molecule produced by reaction of the active second electrode with moisture remaining in the semiconductor device and/or moisture entering from the outside of the device increase the carrier concentration in the oxide semiconductor, which causes a reduction in the reliability of the semiconductor device. An adsorption layer of a hydrogen ion and/or a hydrogen molecule may be provided on the other surface side of the second electrode having one surface in contact with the organic layer. Further, an opening which a hydrogen ion and/or a hydrogen molecule passes through may be provided for the second electrode.
1. A semiconductor device, comprising:
a transistor; and
a light-emitting element electrically connected to the transistor, the light-emitting element comprising an electroluminescent layer,
wherein a through hole of an electrode of the light-emitting element overlaps with a channel formation region of the transistor.
2. The semiconductor device according to claim 1 , wherein the channel formation region comprises an oxide semiconductor.
3. The semiconductor device according to claim 1 , further comprising:
a second transistor electrically connected to the transistor,
wherein a second through hole of the electrode of the light-emitting element overlaps with a channel formation region of the second transistor.