Methods for forming layers on a substrate
Methods for forming layers on a substrate having one or more features formed therein are provided herein. In some embodiments, a method for forming layers on a substrate having one or more features formed therein may include depositing a seed layer within the one or more features; and etching the seed layer to remove at least a portion of the seed layer proximate an opening of the feature such that the seed layer comprises a first thickness disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature and a second thickness disposed on an upper portion of the sidewall proximate the opening of the feature and wherein the first thickness is greater than the second thickness.
1. A method for forming layers on a substrate having one or more features, comprising:
depositing a seed layer within the one or more features; and
plasma etching the seed layer, prior to depositing any additional layers, to remove all of the seed layer proximate an opening of the feature such that the seed layer comprises a first thickness disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature and no seed layer disposed on upper corners of the opening and an upper portion of the sidewall proximate the opening of the feature.
2. The method of claim 1 , wherein the seed layer comprises one of copper (Cu), ruthenium (Ru), cobalt (Co), copper alloys, ruthenium alloys or cobalt alloys.
3. The method of claim 1 , wherein the first thickness is about 2 to about 10 nm.
4. The method of claim 1 , wherein at least substantially all of the seed layer is removed from an upper bevel of the one or more features.
5. The method of claim 1 , wherein the seed layer is deposited via a physical deposition (PVD) process comprising:
sputtering a source material from a target in the presence of a plasma formed from a process gas comprising one of argon (Ar), helium (He), krypton (Kr), neon (Ne) or xenon (Xe).
6. The method of claim 5 , wherein forming the plasma comprises applying about 5 to about 40 kW of DC power to the target to ignite the process gas.
7. The method of claim 6 , further comprising:
providing up to about 2 kW of a substrate bias RF power at a frequency of about 2 to about 60 MHz to deposit a layer comprising the source material atop a barrier layer disposed within the feature.
8. The method of claim 1 , wherein etching the seed layer comprises:
providing a process gas comprising one of argon (Ar), helium (He), krypton (Kr), neon (Ne) or xenon (Xe); and
forming a plasma from the process gas to etch the seed layer.
9. The method of claim 8 , wherein forming the plasma comprises applying about 5 to about 40 kW of DC power to a target to ignite the process gas.
10. The method of claim 9 , further comprising:
providing at least 50 W of a substrate bias RF power at a frequency of about 2 to about 60 MHz to etch the seed layer.
11. The method of claim 1 , wherein the one or more features comprise a ratio of height to width of greater than 2:1.
12. The method of claim 1 , wherein the seed layer does not form a continuous layer on the sidewalls of the feature.
13. The method of claim 1 , further comprising:
depositing a barrier layer atop the substrate prior to depositing the seed layer.
14. The method of 13 , wherein the barrier layer comprises one of titanium (Ti), tantalum (Ta), titanium nitride (TiN) or tantalum nitride (TaN).
15. The method of claim 1 , further comprising:
depositing a conductive material atop the seed layer to fill the feature.
16. The method of claim 1 , further comprising:
depositing a second seed layer atop the etched seed layer.
17. A method for forming layers on a substrate having one or more features, comprising:
depositing a seed layer within the one or more features; and
etching the seed layer to remove all of the seed layer proximate an opening of the feature such that the seed layer comprises a first thickness disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature and no seed layer disposed on upper corners of the opening and an upper portion of the sidewall proximate the opening of the feature, wherein etching the seed layer further comprises simultaneously depositing seed layer material while etching the seed layer, and wherein depositing the seed layer and etching the seed layer are performed in the same process chamber.
18. A non-transitory computer readable medium having instructions stored thereon that, when executed, cause a method for forming layers on a substrate having one or more features to be performed in a process chamber, the method comprising:
depositing a seed layer within the one or more features; and
plasma etching the seed layer, prior to depositing any additional layers, to remove all of the seed layer proximate an opening of the feature such that the seed layer comprises a first thickness disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature and no seed layer disposed on upper corners of the opening and an upper portion of the sidewall proximate the opening of the feature.
19. The non-transitory computer readable medium of claim 18 , wherein the method further comprises:
depositing a barrier layer atop the substrate prior to depositing the seed layer.